Single N-channel MOSFET ELM5K8471A-S ■General description ■Features ELM5K8471A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=60V Id=5.8A Rds(on) < 54mΩ (Vgs=10V) Rds(on) < 60mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Symbol Drain-source voltage Gate-source voltage Vds Vgs 60 ±20 V V Id 5.8 4.2 A Idm 10 A Pd 2.8 1.2 W Tj, Tstg -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Tj=150°C Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit D SOT-223(TOP VIEW) 1 2 Unit °C/W Pin No. Pin name 1 2 GATE DRAIN 3 SOURCE G S 3 5- 1 Single N-channel MOSFET ELM5K8471A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=60V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Gfs Vsd Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time 60 V 1 Ta=85°C 5 1.0 10 μA ±100 nA 2.5 V A Vgs=10V, Id=5.8A 48 54 Vgs=4.5V, Id=4.2A 54 60 Vds=15V, Id=2.4A Is=1.6A, Vgs=0V 24 0.8 Is Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit mΩ 1.2 S V 1.6 A 890 85 pF pF Crss 48 pF Qg Qgs Qgd 10.0 3.5 3.6 15.0 nC nC nC td(on) tr Vgs=4.5V, Vds=30V 10 12 15 20 ns ns td(off) RL=6.8Ω, Id=3.0A, Rgen=6Ω 25 35 ns 10 15 ns Vgs=0V, Vds=30V, f=1MHz Vgs=5V, Vds=30V, Id=3.0A tf 5- 2 AFN8471 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM5K8471A-S ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev. A May 2011 www.alfa-mos.com Page 3 5- 3 AFN8471 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM5K8471A-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev. A May 2011 www.alfa-mos.com Page 4 5- 4 AFN8471 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM5K8471A-S Typical■Test Characteristics circuit and waveform ©Alfa-MOS Technology Corp. Rev. A May 2011 www.alfa-mos.com 5- 5 Page 5