Single N-channel MOSFET ELM5E402PA-S ■General description ■Features ELM5E402PA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Ta=70°C Continuous drain current Tj=150°C Id Pulsed drain current Idm Tc=25°C Tc=70°C Power dissipation Pd Junction and storage temperature range Tj, Tstg ■Pin configuration Vds=20V Id=0.7A Rds(on) = 360mΩ (Vgs=4.5V) Rds(on) = 420mΩ (Vgs=2.5V) Rds(on) = 560mΩ (Vgs=1.8V) Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 0.7 0.4 V 1.0 0.27 0.16 A A -55 to 150 1 2 °C ■Circuit D SOT-523(TOP VIEW) 3 W Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 5- 1 Single N-channel MOSFET ELM5E402PA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=16V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance 1 Ta=85°C 5 0.3 0.7 μA ±1 mA 0.8 V A 240 360 Rds(on) Vgs=2.5V, Id=0.5A 300 420 420 1 560 0.65 1.20 V 0.3 A Gfs Diode forward voltage Vsd Is=0.15A, Vgs=0V Is Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time V Vgs=4.5V, Id=0.6A Forward transconductance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 20 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=1.8V, Id=0.4A Vds=10V, Id=0.4A Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=0V, Vds=10V, f=1MHz Vgs=4.5V, Vds=10V, Id=0.6A mΩ S 70 pF 20 8 pF pF 1.06 0.18 1.38 nC nC 0.32 18 26 nC ns Vgs=4.5V, Vds=10V 20 28 ns td(off) RL=20Ω, Id=0.5A, Rgen=1Ω 70 110 ns 25 40 ns tf 5- 2 AFN1012E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM5E402PA-S ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Oct. 2010 www.alfa-mos.com Page 3 5- 3 AFN1012E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM5E402PA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Oct. 2010 www.alfa-mos.com Page 4 5- 4 AFN1012E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM5E402PA-S Typical■Test Characteristics circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Oct. 2010 www.alfa-mos.com 5- 5 Page 5