Single P-channel MOSFET ELM5E401PA-S ■General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vdss Gate-source voltage Vgs Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg ■Pin configuration Vds=-20V Id=-0.7A Rds(on) = 620mΩ (Vgs=-4.5V) Rds(on) = 860mΩ (Vgs=-2.5V) Rds(on) = 1450mΩ (Vgs=-1.8V) Ta=25°C. Unless otherwise noted. Limit Unit -20 V ±12 -0.7 V A -0.4 -1.0 0.27 A 1 2 °C ■Circuit SOT-523(TOP VIEW) 3 W 0.16 - 55 to 150 D Pin No. Pin name 1 2 3 GATE SOURCE DRAIN G S 5-1 Single P-channel MOSFET ELM5E401PA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage On state drain current Static drain-source on-resistance Condition Vds=-20V, Vgs=0V, Ta=85°C -5 Vds=0V, Vgs=±12V Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V ±100 nA -1.0 V A 500 620 Rds(on) Vgs=-2.5V, Id=-0.5A 700 860 1000 1 1450 -0.65 -1.20 V -0.3 A 100 pF Diode forward voltage Vsd Is=-0.15A, Vgs=0V Is Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-off fall time -0.4 -0.7 μA Vgs=-4.5V, Id=-0.6A Gfs Turn-on rise time Turn-off delay time V -1 Forward transconductance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge -20 Vds=-20V, Vgs=0V Vgs=-1.8V, Id=-0.4A Vds=-10V, Id=-0.4A Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit 70 Vgs=0V, Vds=-10V, f=1MHz Vgs=-4.5V, Vds=-10V Id=-0.25A Vgs=-4.5V, Vds=-10V tr RL=30Ω, Id=-0.2A td(off) Rgen=10Ω tf 5-2 S 20 10 1.0 0.1 mΩ pF pF 1.3 nC nC 0.3 10 15 nC ns 10 15 ns 40 60 ns 30 50 ns AFP1013 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM5E401PA-S ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Jan. 2011 www.alfa-mos.com Page 3 5-3 AFP1013 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM5E401PA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Jan. 2011 www.alfa-mos.com Page 4 5-4 Alfa-MOS Single P-channel MOSFET Technology AFP1013 20V P-Channel Enhancement Mode MOSFET ELM5E401PA-S ■Test circuit and waveform Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Jan. 2011 www.alfa-mos.com Page 5 5-5