Single N-channel MOSFET ELM51400FA-S ■General description ■Features ELM51400FA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current(Tj=150°C) Vds=30V Id=1.0A Rds(on) < 430mΩ (Vgs=4.5V) Rds(on) < 580mΩ (Vgs=2.5V) Rds(on) < 860mΩ (Vgs=1.8V) Ta=25°C. Unless otherwise noted. Limit Unit 30 V ±12 1.0 Id Ta=70°C Pulsed drain current Tc=25°C Tc=70°C A 0.35 0.22 - 55 to 150 Pd Junction and storage temperature range A 0.6 6 Idm Power dissipation V Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit D SC-70(TOP VIEW) 3 1 2 Unit °C/W Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 6- 1 Single N-channel MOSFET ELM51400FA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS 0.5 1.8 1 5 μA ±100 nA 1.0 V A Vgs=4.5V, Id=1.5A 380 430 Rds(on) Vgs=2.5V, Id=1.2A Vgs=1.8V, Id=0.6A Gfs Vds=10V, Id=1.0A 500 760 1 580 860 0.65 1.20 V 1.0 A Vsd Is=1.0A, Vgs=0V Is Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Turn-off delay time Turn-off fall time V Ta=85°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time 30 Qg Qgs Qgd td(on) tr td(off) tf Vgs=0V, Vds=15V, f=1MHz Vgs=4.5V, Vds=15V Id=1.2A Vgs=4.5V, Vds=15V RL=20Ω, Id=1.2A Rgen=1Ω 6- 2 mΩ S 85 25 pF pF 15 pF 1.4 1.8 nC 0.3 0.6 15 25 nC nC ns 25 15 45 25 ns ns 10 20 ns AFN1306 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM51400FA-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A July 2011 www.alfa-mos.com Page 3 6- 3 AFN1306 Alfa-MOS 30V N-Channel Enhancement Mode MOSFET Single N-channel MOSFET Technology ELM51400FA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A July 2011 www.alfa-mos.com Page 4 6- 4 AFN1306 Alfa-MOS 30V N-Channel Enhancement Mode MOSFET Single N-channel MOSFET Technology ELM51400FA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A July 2011 www.alfa-mos.com Page 5 6- 5 AFN1306 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM51400FA-S Typical Characteristics ■Test circuit and waveform ©Alfa-MOS Technology Corp. Rev.A July 2011 www.alfa-mos.com Page 6 6- 6