ACE1550B P-Channel Enhancement Mode Field Effect Transistor Description The ACE1550B combines advanced trench MOSFET technology with a low resistance package to provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones, Pagers. Features VDS(V) =-20V ID=-0.7A RDS(ON)<620mΩ (VGS=-4.5V) RDS(ON)<860mΩ (VGS=-2.5V) RDS(ON)<1450mΩ (VGS=-1.8V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current * AC TA=25℃ TA=70℃ Pulsed Drain Current * B Power Dissipation ID IDM TA=25℃ TA=70℃ PD -0.7 -0.56 -1 0.27 0.16 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 A A W O C Packaging Type SOT-523 VER 1.2 1 ACE1550B P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE1550B XX + H Halogen - free Pb - free KM : SOT-523 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance V(BR)DSS VGS=0V, ID=-250 uA -20 VGS(th) VDS=VGS, IDS=-250uA -0.3 IGSS VDS=0V,VGS=±12V 100 nA IDSS VDS=-20V, VGS=0V 1 uA RDS(ON) V -0.8 VGS=-4.5V, ID=-0.6A 500 620 VGS=-2.5V, ID=-0.5A 700 860 VGS=-1.8V, ID=-0.4A 1000 1450 Forward Transconductance gfs VDS=-10V,ID=-0.4A 1 Diode Forward Voltage VSD ISD=-0.15A, VGS=0V -0.65 -1.2 1.0 1.3 mΩ S V Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.3 td(on) 10 15 10 15 40 60 30 50 70 100 Turn-On Time Turn-Off Time tr td(off) VDS=-10V, VGS=-4.5V, ID=-0.25A VGS=-4.5V, ID=-0.2A, VDS=-10V, RG=10Ω tf 0.1 nC nS Dynamic Input Capacitance Ciss Output Capacitance Coss REVERSE Transfer Capacitance Crss VGS=0V, VDS=-10V, f=1MHz 20 pF 10 VER 1.2 2 ACE1550B P-Channel Enhancement Mode Field Effect Transistor Note: 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The RθJA is the sum of the thermal impedence from junction to lead R θJA and lead to ambient . 4. The static characteristics are obtained using <300 μs pulses, duty cycle 0.5% max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Typical Performance Characteristics VER 1.2 3 ACE1550B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE1550B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 5 ACE1550B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-523 Unit:mm Dim. Min. Typ. Max. A 0.1 0.2 0.3 B 1.10 1.20 1.30 C 0.17 0.22 0.27 D 0.95 1.00 1.05 E 0.09 0.125 0.16 F 0.525 0.575 0.60 G 1.5 1.6 1.7 VER 1.2 6 ACE1550B P-Channel Enhancement Mode Field Effect Transistor +Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 7