Complementary MOSFET ELM34601AA-N ■General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V) Vds=-30V Id=-6A Rds(on) < 35mΩ(Vgs=-10V) Rds(on) < 60mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol Vds Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note 30 -30 V Vgs ±20 7 6 ±20 -6 -5 V Idm 28 -24 A Pd 2.0 1.3 2.0 1.3 W Tj,Tstg -55 to 150 -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range A 3 ■Thermal Characteristics Parameter Maximum junction-to-ambient Symbol Rθja Device N-ch Maximum junction-to-ambient Rθja P-ch ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. 62.5 Unit °C/W 62.5 °C/W Note ■Circuit Pin No. Pin name 1 2 SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 8 DRAIN2 DRAIN1 DRAIN1 7-1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM34601AA-N ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=250μA, Vgs=0V Vds=20V, Vgs=0V, Ta=55°C 10 Gate-body leakage current Gate threshold voltage On state drain current Igss Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Pulsed current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time V 1 Idss Max.body-diode continuous current 30 Vds=24V, Vgs=0V Zero gate voltage drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note ±100 nA 2.5 V A 1 mΩ 1 1 S V 1 1 Is 3 A Ism 6 A Gfs Vsd Vds=0V, Vgs=±20V μA 0.8 28 1.5 Vgs=10V, Id=7A 14 21 Vgs=4.5V, Id=6A 21 32 Vds=10V, Id=5A If=1A, Vgs=0V 8 3 Ciss 1700 pF Coss Vgs=0V, Vds=10V, f=1MHz Crss 380 260 pF pF Qg Qgs 40 28 nC nC 2 2 12 20 nC ns 2 2 10 ns 2 120 ns 2 35 15.5 ns ns 2 7.9 nC Vgs=10V, Vds=15V, Id=6A Qgd td(on) tr Vgs=10V, Vds=15V, Id=1A td(off) Rgen=6Ω Turn-off fall time Body-diode reverse recovery time tf trr Body-diode reverse recovery charge Qrr If=5A, dIf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7-2 N-Complementary & P-Channel Enhancement Mode MOSFET Field Effect Transistor ELM34601AA-N P2103NVG SOP-8 Lead-Free ■Typical Electrical and Thermal Characteristics (N-ch) 7-3 4 MAY-21-2004 NIKO-SEM MOSFET N-Complementary & P-Channel Enhancement Mode ELM34601AA-N Field Effect Transistor P2103NVG SOP-8 Lead-Free 7-4 5 MAY-21-2004 Complementary MOSFET ELM34601AA-N ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Ta=55°C -10 Vds=0V, Vgs=±20V μA ±100 nA -2.5 V A 1 mΩ 1 -1 S V 1 1 Is -3 A Ism -6 A Static drain-source on-resistance Rds(on) Pulsed current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max.body-diode continuous current -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Gfs Vsd -0.8 -24 -1.5 Vgs=-10V, Id=-6A 28 35 Vgs=-4.5V, Id=-5A 44 60 Vds=-10V, Id=-5A If=-1A, Vgs=0V 7 3 Ciss 970 pF Coss Vgs=0V, Vds=-10V, f=1MHz Crss 370 180 pF pF Gate-source charge Qg Qgs 28 6 nC nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 12 20 nC ns 2 2 Turn-on rise time Turn-off delay time tr 17 ns 2 160 ns 2 75 15.5 ns ns 2 7.9 nC Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Vgs=-10V, Vds=-15V Id=-5A Vgs=-10V, Vds=-15V td(off) Id=-1A, RL=1Ω, Rgen=6Ω Turn-off fall time Body-diode reverse recovery time tf trr Body-diode reverse recovery charge Qrr If=-5A, dIf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7-5 N-Complementary & P-Channel Enhancement Mode MOSFET Field Effect Transistor ELM34601AA-N P2103NVG SOP-8 Lead-Free ■Typical Electrical and Thermal Characteristics (P-ch) 7-6 6 MAY-21-2004 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM34601AA-N Field Effect Transistor 7-7 7 P2103NVG SOP-8 Lead-Free MAY-21-2004