Complementary MOSFET ELM34601AA-N ■General Description ■Features ELM34601AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V) Vds=-30V Id=-6A Rds(on) < 35mΩ(Vgs=-10V) Rds(on) < 60mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol N-ch (Max.) P-ch (Max.) Vds 30 -30 V Vgs ±20 7 ±20 -6 V 6 28 -5 -24 2.0 1.3 -55 to 150 2.0 1.3 -55 to 150 Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range Pd Tj,Tstg Unit Note A A 3 W °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Symbol Rθja Device N-ch Maximum junction-to-ambient Rθja P-ch ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. 62.5 Unit °C/W 62.5 °C/W Note ■Circuit Pin No. 1 2 Pin name SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 8 DRAIN2 DRAIN1 DRAIN1 7-1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM34601AA-N ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Vds=20V, Vgs=0V, Tj=55°C Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Min. Typ. Ta=25°C Max. Unit Note 30 0.8 28 V 1.5 1 10 μA ±100 nA 2.5 V A 1 mΩ 1 S 1 1 V 1 3 6 A A 3 Vgs=10V, Id=7A 14 21 21 8 32 Forward transconductance Gfs Vgs=4.5V, Id=6A Vds=10V, Id=5A Diode forward voltage Vsd If=1A, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=10V, f=1MHz 1700 380 pF pF Crss 260 pF Qg 40 nC 2 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=10V, Vds=15V, Id=6A Qgd td(on) 28 12 20 nC nC ns 2 2 2 Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=15V, Id≈1A td(off) Rgen=6Ω 10 120 ns ns 2 2 35 15.5 7.9 ns ns nC 2 Turn-off fall time Body-diode reverse recovery time Body-diode reverse recovery charge tf trr Qrr If=5A, dl/dt=100A/μs NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7- 2 MOSFET N-Complementary & P-Channel Enhancement Mode Field Effect Transistor ELM34601AA-N P2103NVG SOP-8 Lead-Free ■Typical Electrical and Thermal Characteristics (N-ch) 7- 3 4 MAY-21-2004 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM34601AA-N Field Effect Transistor P2103NVG SOP-8 Lead-Free 7- 4 5 MAY-21-2004 Complementary MOSFET ELM34601AA-N ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) -0.8 -24 Typ. Ta=25°C Max. Unit Note V -1.5 -1 -10 μA ±100 nA -2.5 V A 1 mΩ 1 S 1 -1 V 1 -3 -6 A A 3 Vgs=-10V, Id=-6A 28 35 44 7 60 Forward transconductance Gfs Vgs=-4.5V, Id=-5A Vds=-10V, Id=-5A Diode forward voltage Vsd If=-1A, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-10V, f=1MHz 970 370 pF pF Crss 180 pF 28 nC 2 6 12 20 nC nC ns 2 2 2 17 160 ns ns 2 2 75 15.5 7.9 ns ns nC 2 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Qg Vgs=-10V, Vds=-15V Id=-5A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-15V td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω Turn-off fall time Body-diode reverse recovery time Body-diode reverse recovery charge tf trr Qrr If=-5A, dl/dt=100A/μs NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7- 5 MOSFET N-Complementary & P-Channel Enhancement Mode Field Effect Transistor ELM34601AA-N P2103NVG SOP-8 Lead-Free ■Typical Electrical and Thermal Characteristics (P-ch) 7- 6 6 MAY-21-2004 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM34601AA-N Field Effect Transistor P2103NVG SOP-8 Lead-Free 7- 7 7 MAY-21-2004