Complementary MOSFET ELM34609AA-N ■General Description ■Features ELM34609AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=4A Rds(on) < 65mΩ(Vgs=10V) Rds(on) < 120mΩ(Vgs=4.5V) Vds=-30V Id=-3A Rds(on) < 150mΩ(Vgs=-10V) Rds(on) < 250mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol N-ch (Max.) P-ch (Max.) Vds 30 -30 V Vgs ±20 4 ±20 -3 V 3 10 -2 -10 2.0 1.3 -55 to 150 2.0 1.3 -55 to 150 Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range Pd Tj,Tstg Unit Note A A 3 W °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Symbol Rθja Device N-ch Maximum junction-to-ambient Rθja P-ch ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. 110 Unit °C/W 110 °C/W Note ■Circuit Pin No. 1 2 Pin name SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 8 DRAIN2 DRAIN1 DRAIN1 7-1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM34609AA-N ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Vds=20V, Vgs=0V, Tj=55°C Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Min. Typ. Ta=25°C Max. Unit Note 30 0.9 10 V 1.5 1 10 μA ±100 nA 2.5 V A 1 mΩ 1 S 1 V 1 Vgs=10V, Id=4A 48 65 72 6 120 Forward transconductance Gfs Vgs=4.5V, Id=3A Vds=10V, Id=3A Diode forward voltage Vsd If=0.9A, Vgs=0V DYNAMIC PARAMETERS Input capacitance Ciss 265 pF Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Coss Vgs=0V, Vds=10V, f=1MHz Crss 65 40 pF pF Total gate charge Gate-source charge Gate-drain charge Qg Qgs Qgd 7.5 Vgs=10V, Vds=15V, Id=3A 5.0 0.8 1.0 nC nC nC 2 2 2 td(on) tr Vgs=10V, Vds=15V, Id≈1A td(off) Rl=15Ω, Rgen=6Ω 7 12 12 11 18 18 ns ns ns 2 2 2 7 40 11 80 ns ns 2 Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body-diode reverse recovery time tf trr If=0.9A, dl/dt=100A/μs NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7- 2 1.2 N- & P-Channel Enhancement Mode Complementary MOSFET Field Effect Transistor ELM34609AA-N P6503NJG TSOPJW-8 Lead-Free ■Typical Electrical and Thermal Characteristics (N-ch) 7- 34 Jun-26-2006 NIKO-SEM MOSFET N-Complementary & P-Channel Enhancement Mode Field Effect Transistor ELM34609AA-N 7- 4 5 P6503NJG TSOPJW-8 Lead-Free Jun-26-2006 Complementary MOSFET ELM34609AA-N ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) -0.9 -10 Typ. Ta=25°C Max. Unit Note V -1.5 -1 -10 μA ±100 nA -2.5 V A 1 mΩ 1 S 1 V 1 Vgs=-10V, Id=-3A 100 150 170 3 250 Forward transconductance Gfs Vgs=-4.5V, Id=-2A Vds=-10V, Id=-2A Diode forward voltage Vsd If=-0.9A, Vgs=0V DYNAMIC PARAMETERS Input capacitance Ciss 290 pF Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Coss Vgs=0V, Vds=-10V, f=1MHz Crss 65 40 pF pF Total gate charge Gate-source charge Gate-drain charge Qg Qgs Qgd 5.5 1.2 0.9 6.6 nC nC nC 2 2 2 8 11 14 12 18 21 ns ns ns 2 2 2 8 40 12 80 ns ns 2 Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body-diode reverse recovery time Vgs=-10V, Vds=-15V Id=-2A td(on) tr Vgs=-10V, Vds=-15V td(off) Id≈-1A, Rl=15Ω, Rgen=6Ω tf trr If=-0.9A, dl/dt=100A/μs NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7- 5 -1.2 N- & P-Channel Enhancement Mode Complementary MOSFET Field Effect Transistor ELM34609AA-N P6503NJG TSOPJW-8 Lead-Free ■Typical Electrical and Thermal Characteristics (P-ch) 7- 6 6 Jun-26-2006 NIKO-SEM N- & P-Channel Enhancement Mode Complementary MOSFET Field Effect Transistor ELM34609AA-N 7- 7 7 P6503NJG TSOPJW-8 Lead-Free Jun-26-2006