Dual N-channel MOSFET ELM34810AA-N ■General description ■Features ELM34810AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 35mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Ta=70°C Continuous drain current 30 ±20 7 6 40 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg V V A A 2.0 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Typ. Rθja ■Pin configuration Max. Unit 62.5 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE1 2 3 GATE1 SOURCE2 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 4-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM34810AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V nA 3.0 V A 1 mΩ 1 1.2 S V 1 1 Is 1.3 A Ism 2.5 A Rds(on) Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gfs Vsd Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr 1.5 15 21 Vgs=4.5V, Id=6A 21 35 Vds=15V, Id=5A If=1A, Vgs=0V 24 Vgs=0V, Vds=15V, f=1MHz Vgs=5V, Vds=15V, Id=7A 1650 pF 365 170 pF pF 18.0 5.5 25.0 6.7 Vgs=10V, Vds=15V, Id=1A td(off) Rgen=6Ω tf trr 1.0 25 Vgs=10V, Id=7A Ciss Qg Qgs Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge μA ±100 Static drain-source on-resistance Pulsed current DYNAMIC PARAMETERS Input capacitance V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Max.body-diode continuous current 30 Vds=24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note If=5A, dIf/dt=100A/μs Qrr 4-2 nC nC 2 2 2 2 11 9 20 nC ns 18 ns 2 25 40 ns 2 11 15.5 20 ns ns 2 7.9 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 3 nC NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor Dual N-channel MOSFET P2103HVG SOP-8 Lead-Free ELM34810AA-N ■Typical electrical and thermal characteristics 3 4-3 Jun-29-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor Dual N-channel MOSFET P2103HVG SOP-8 Lead-Free ELM34810AA-N 4 4-4 Jun-29-2004