Dual N-channel MOSFET ELM34812AA-N ■General description ■Features ELM34812AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=20V Id=7A Rds(on) < 21mΩ (Vgs=4.5V) Rds(on) < 35mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Symbol Vds Limit 20 Unit V Vgs ±12 V Id 7 6 A Idm Ta=25°C Power dissipation Pd Ta=70°C Junction and storage temperature range Tj, Tstg 38 2.0 A Note 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Steady-state Typ. Rθja ■Pin configuration Max. Unit 62.5 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 3 Pin name SOURCE1 GATE1 SOURCE2 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 4- 1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM34812AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=16V, Vgs=0V Vds=16V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Static drain-source on-resistance Rds(on) 20 0.5 15 V 0.8 1 10 μA ±100 nA 1.2 V A Vgs=4.5V, Id=7A 15 21 mΩ 21 37 35 mΩ S Forward transconductance Gfs Vgs=2.5V, Id=6A Vds=5V, Id=7A Diode forward voltage Vsd If=1A, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Min. Ta=25°C Typ. Max. Unit Note 1 1 1.2 V 1 1.3 2.5 A A 3 1082 277 pF pF Crss 130 pF Qg 12 Vgs=0V, Vds=10V, f=1MHz 1 19 nC 2 2 2 2 Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=4.5V, Vds=10V, Id=7A Qgd td(on) 2 3 8 16 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=4.5V, Vds=10V, Id≈1A td(off) Rgen=6Ω 8 24 16 38 ns ns 2 2 8 15.5 7.9 16 ns ns nC 2 Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge tf trr Qrr If=5A, dl/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 NIKO-SEM P2002IVG Dual N-Channel Enhancement Mode Dual N-channel MOSFET Field Effect Transistor ELM34812AA-N SOP-8 Lead-Free ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 Is , Reverse Drain Current(A) V GS = 0V 10 T A= 125° C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 4- 3 3 0 0.2 0.4 0.6 0.8 VSD , Body Diode Forward Voltage (V) 1.0 MAY-19-2005 1.2 NIKO-SEM Dual N-channel MOSFET Dual N-Channel Enhancement Mode ELM34812AA-N Field Effect Transistor 4 4- 4 P2002IVG SOP-8 Lead-Free MAY-19-2005