Dual N-channel MOSFET ELM57800GA-S ■General description ■Features ELM57800GA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=20V Id=1.8A Rds(on) < 280mΩ (Vgs=4.5V) Rds(on) < 340mΩ (Vgs=2.5V) Rds(on) < 580mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current Tc=25°C Pd Tc=70°C Junction and storage temperature range Tj, Tstg ■Pin configuration SC-70-6(TOP VIEW) 1 2 4 3 V A 1.2 Idm Power dissipation 5 ±12 1.8 Id Ta=70°C Pulsed drain current 6 Ta=25°C. Unless otherwise noted. Limit Unit 20 V 6 0.3 A W 0.2 -55 to 150 °C ■Circuit Pin No. 1 Pin name SOURCE1 2 3 GATE1 DRAIN2 4 SOURCE2 5 6 GATE2 DRAIN1 5-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM57800GA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=20V, Vgs=0V Gate-source leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS 0.4 1.8 1 5 μA ±100 nA 1.0 V A Vgs=4.5V, Id=1.8A 240 280 Rds(on) Vgs=2.5V, Id=1.5A Vgs=1.8V, Id=1.2A Gfs Vds=10V, Id=1.0A 300 500 1 340 580 0.65 1.20 V 1 A Vsd Is=1.0A, Vgs=0V Is Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-off delay time Turn-off fall time V Ta=85°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time 20 mΩ S 70 20 pF pF Crss 8 pF Qg 1.06 Vgs=0V, Vds=10V, f=1MHz 1.38 nC Qgs Vgs=4.5V, Vds=10V, Id=1.2A Qgd td(on) 0.18 0.32 18 26 nC nC ns tr Vgs=4.5V, Vds=10V td(off) RL=20Ω, Id=1.2A, Rgen=1Ω 20 70 28 110 ns ns 25 40 ns tf 5-2 AFN1912 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET Dual N-channel MOSFET ELM57800GA-S ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Oct. 2010 www.alfa-mos.com Page 3 5-3 AFN1912 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET Dual N-channel MOSFET ELM57800GA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Oct. 2010 www.alfa-mos.com Page 4 5-4 AFN1912 Alfa-MOS 20V N-Channel Enhancement Mode MOSFET Technology Dual N-channel MOSFET ELM57800GA-S Typical Characteristics ■Test circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Oct. 2010 www.alfa-mos.com Page 5 5-5