MOSFET SMD Type P-Channel MOSFET SI2309DS-HF (KI2309DS-HF) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● VDS (V) =-60V 1 ● RDS(ON) ＜ 550mΩ (VGS =-4.5V) 0.55 ● RDS(ON) ＜ 340mΩ (VGS =-10V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● ID =-1.25 A (VGS =-10V) 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● Pb−Free Package May be Available. The G−Suffix Denotes a 1.1 +0.2 -0.1 Pb−Free Lead Finish 3 S 0-0.1 1 D +0.1 0.68 -0.1 1. Gate G 2. Source 3. Drain 2 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Drain-Source Voltage Parameter VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current *1,*2 Ta = 25℃ Ta = 70℃ Pulsed Drain Current Avalanche Current Power Dissipation *1,*2 L=0.1mH Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤5 sec Steady State *1 ID -0.85 -8 IAS -5 RthJA 1.25 0.8 A W 100 166 RthJC 60 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Thermal Resistance.Junction- to-Case *1 V -1.25 IDM PD Unit ℃/W ℃ *1 Surface Mounted on FR4 Board. *2 t ≤ 5 sec. www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET SI2309DS-HF (KI2309DS-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current VDS=VGS ID=-250μA Static Drain-Source On-Resistance *1 RDS(On) Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Maximum Body-Diode Continuous Current Diode Forward Voltage Marking A9* F www.kexin.com.cn μA ±100 nA -3 V VGS=-10V, ID=-1.25A 340 550 -6 mΩ A VDS=-4.5V, ID=-1A 1.9 VGS=-10V, VDS=-30V, ID=-1.25A 1.15 5.4 S 12 nC 0.92 VGS=-4.5V, VDS=-30V, RL=30Ω,RGEN=6Ω ID=-1A IF=-1.25A, dI/dt=100A/μs 10.5 20 11.5 20 15.5 30 7.5 15 30 55 IS VSD *1 Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%. ■ Marking -1 VGS=-4.5V, ID=-1A VGS=-4.5V, VDS=-10V Unit V -1 VDS=0V, VGS=±20V gFS Max -50 IGSS ID(ON) Typ -60 VDS=-48V, VGS=0V VGS(th) On state drain current *1 Min VDS=-48V, VGS=0V, TJ=125℃ Gate Threshold Voltage Forward Transconductance *1 2 Test Conditions ID=-250μA, VGS=0V IS=-1.25A,VGS=0V -0.82 ns -1.25 A -1.2 V MOSFET SMD Type P-Channel MOSFET SI2309DS-HF (KI2309DS-HF) ■ Typical Characterisitics Output Characteristics 8 VGS = 10 thru 6 V I D - Drain Current (A) 4 4V 2 1, 2 V TC = -55 C 5 5V 6 I D - Drain Current (A) Transfer Characteristics 6 25 C 4 3 125 C 2 1 3V 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 4 5 Capacitance 500 1.2 400 C - Capacitance (pF) ) r DS(on) - On-Resistance ( 3 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.5 2 0.9 VGS = 4.5 V 0.6 VGS = 10 V 0.3 Ciss 300 200 Coss 100 Crss 0.0 0 0 2 4 6 8 0 6 Gate Charge 1.8 r DS(on) - On-Resistance ( ) (Normalized) V GS - Gate-to-Source Voltage (V) 2.0 VDS = 30 V ID = 1.25 A 8 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 10 12 6 4 2 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.25 A 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 4 Qg - Total Gate Charge (nC) 5 6 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET SI2309DS-HF (KI2309DS-HF) ■ Typical Characterisitics Source-Drain Diode Forward Voltage r DS(on) - On-Resistance ( I S - Source Current (A) TJ = 150 C 1 TJ = 25 C 0.8 0.6 ID = 1.25 A 0.4 0.2 0.0 0.1 0.00 On-Resistance vs. Gate-to-Source Voltage 1.0 ) 10 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 4 8 10 Single Pulse Power 12 ID = 250 A 0.4 10 8 Power (W) 0.2 0.0 6 TA = 25 C 4 -0.2 -0.4 -50 2 . -25 0 25 50 75 100 125 0 150 0.01 0.1 TJ - Temperature ( C) Safe Operating Area, Junction-to-Ambient I D - Drain Current (A) 10 1 10 s 100 s Limited by rDS(on) 1 ms 0.1 10 ms TA = 25 C Single Pulse 100 ms dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) www.kexin.com.cn 1 Time (sec) 100 4 6 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 V GS(th) Variance (V) 2 100 10 100 500 MOSFET SMD Type P-Channel MOSFET SI2309DS-HF (KI2309DS-HF) ■ Typical Characterisitics Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 0.1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 500 Square Wave Pulse Duration (sec) www.kexin.com.cn 5