Dual P-channel MOSFET ELM5B801QA-N ■General description ■Features ELM5B801QA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • Vds=-20V Id=-4.5A, Rds(on)=96mΩ (Vgs=-4.5V) Id=-3.8A, Rds(on)=128mΩ (Vgs=-2.5V) Id=-2.5A, Rds(on)=180mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Continuous drain current -20 ±12 -4.5 Id Ta=70°C Pulsed drain current Tc=25°C Tc=70°C -12 6.5 4.2 Pd Junction and storage temperature range A -3.8 Idm Power dissipation V V Tj, Tstg A W -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Steady-state Max. Unit 120 °C/W Rθja ■Pin configuration DFN6-2x2(TOP VIEW) Typ. ■Circuit Pin No. Pin name 1 2 3 SOURCE1 GATE1 DRAIN2 4 5 6 SOURCE2 GATE2 DRAIN1 5-1 D2 D1 G2 G1 S1 S2 Dual P-channel MOSFET ELM5B801QA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-16V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit -20 V Ta=85°C Vgs(th) Vds=Vgs, Id=-250μA Vgs=-4.5V, Vds=-5V Id(on) Vgs=-2.5V, Vds=-5V -0.3 -8 -1 -30 μA ±100 nA -0.8 V A -3 Vgs=-4.5V, Id=-4.5A 86 96 Rds(on) Vgs=-2.5V, Id=-3.8A Vgs=-1.8V, Id=-2.5A 114 150 128 180 Gfs Vsd Vds=-5V, Id=-2.8A Is=-1.25A, Vgs=0V 6.5 -0.75 Is Ciss Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Coss Crss Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) Turn-off delay time Turn-off fall time td(off) Rgen=1Ω tf Qg tr Vgs=0V, Vds=-10V, f=1MHz Vgs=-4.5V, Vds=-10V Id=-3.5A Vgs=-4.5V, Vds=-10V Id=-3.5A, RL=2.85Ω 5-2 mΩ -1.30 S V -1.6 A 375 pF 80 60 pF pF 5.00 10.00 nC 0.85 nC 1.50 15 25 nC ns 36 60 ns 25 15 50 25 ns ns AFP2911W Alfa-MOS 20V P-Channel Technology Dual P-channel MOSFET Enhancement Mode MOSFET ELM5B801QA-N ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev.B Nov. 2011 www.alfa-mos.com Page 3 5-3 AFP2911W Alfa-MOS 20V P-Channel Technology Dual P-channel MOSFET Enhancement Mode MOSFET ELM5B801QA-N Typical Characteristics ©Alfa-MOS Technology Corp. Rev.B Nov. 2011 www.alfa-mos.com Page 4 5-4 AFP2911W Alfa-MOS 20V P-Channel Technology Dual P-channel MOSFET Enhancement Mode MOSFET ELM5B801QA-N ■Test circuit & waveform Typical Characteristics ©Alfa-MOS Technology Corp. Rev.B Nov. 2011 www.alfa-mos.com Page 5 5-5