ACE ACE3422B

ACE3422B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE3422B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Features




VDS(V)=60V
ID=2.6A
RDS(ON)=82mΩ (typ.) @VGS=10V
RDS(ON)=96mΩ (typ.) @VGS=4.5V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)
TA=25 OC
O
TA=70 C
Drain Current (Pulse)
ID
IDM
O
Power Dissipation
TA=25 C
TA=70 OC
PD
2.6
2.1
10
1
0.7
Operating Temperature / Storage Temperature TJ/TSTG -55/150
A
A
W
O
C
Packaging Type
SOT-23-3
Ordering information
ACE3422B XX + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.3
1
ACE3422B
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
(TA=25℃, unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max. Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250uA
60
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
1.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
uA
Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode
Continuous Current
V
3.0
VGS=10V, ID=2.6A
82
100
VGS=4.5V, ID=2.8A
96
130
gfs*
VDS=5V,ID=2.6A
15
VSD
VGS=0V, ISD=1A
0.8
IS
mΩ
S
1.2
V
2.5
A
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn- Off Rise Time
tf
VDS=30V, VGS=4.5V,
ID=2.6A
6.5
2.2
nC
2.7
10
VGS=10V, VDS=20V, RL=20Ω,
RGEN=1Ω,
11
ns
29
3
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
VDS=30V, VGS=0V
f=1MHz
VGS=0V, VDS=0V, f=1MHz
350
40
pF
12
1.4
2
Ω
Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJA and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The SOA curve provides a single pulse rating.
F. The current rating is based on the t≤10s thermal resistance rating.
VER 1.3
2
ACE3422B
N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.3
3
ACE3422B
N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.3
4
ACE3422B
N-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOT-23-3
Unit: mm
VER 1.3
5
ACE3422B
N-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
6