STGD7NB120S-1 N-CHANNEL 7A - 1200V IPAK Power MESH IGBT PRELIMINARY DATA T YPE V CES V CE(sat) IC STGD7NB120S-1 1200 V < 2.1 V 7 A ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). 2 1 IPAK TO-251 (Suffix ”-1”) APPLICATIONS ■ LIGHT DIMMER ■ INRUSH CURRENT LIMITATION ■ MOTOR CONTROL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter V CES Collector-Emitter Voltage (VGS = 0) V ECR Reverse Battery Protection V GE G ate-Emitter Voltage o IC Collector Current (continuous) at Tc = 25 C IC Collector Current (continuous) at Tc = 100 C I CM (•) P tot T s tg Tj Value Un it 1200 V 20 V ± 20 V 10 A 7 A 20 A T otal Dissipation at Tc = 25 C 55 W Derating Factor 0.4 W /o C o Collector Current (pulsed) o Storage T emperature Max. Operating Junction Temperature -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area April 2000 1/6 STGD7NB120S-1 THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp o 2.27 100 1.5 C/W C/W o C/W o ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l Parameter Test Con ditions V BR(CES) Collector-Emitt er Breakdown Voltage I C = 250 µA V BR(ECR) Emitter-Collector Breakdown Voltage IC = 10 mA I CES Collector cut-off (V GE = 0) V CE = Max Rating V CE = 0.8 Max Rating IGES Gate-Emitter Leakage Current (VCE = 0) V GE = ± 20 V V GE = 0 V GE = 0 Min. Typ. Max. Unit 1200 V 20 V T j = 25 oC o T j = 125 C V CE = 0 250 1000 µA µA ± 100 nA Max. Unit 5 V ON (∗) Symbo l V GE(th) V GE V CE(SAT ) Parameter Test Con ditions IC = 250 µA Min. Typ. Gate Threshold Voltage V CE = V GE 3 Gate Emitter Voltage V CE = 2.5V I C = 2A T j =25 ÷125 oC 6.5 V Collector-Emitt er Saturation Voltage V GE = 15 V V GE = 15 V V GE = 15 V IC = 3.5 A IC = 7 A IC = 10 A 1.6 2.1 V V V Max. Unit 1.7 DYNAMIC Symbo l gf s Parameter Test Con ditions Forward Transconductance V CE =25 V IC = 7 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V CE = 25 V f = 1 MHz QG Gate Charge V CE = 960 V I CL Latching Current V clamp = 960 V T j = 150 o C C i es C o es C res IC = 7 A Min. Typ. 2.5 4.5 S V GE = 0 430 40 7 pF pF pF V GE = 15 V 29 nC R G =1kΩ 10 A SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n 2/6 Parameter Test Con ditions Min. Typ. Max. Unit Delay Time Rise Time V CC = 960 V V GE = 15 V IC = 7 A R G = 1 KΩ 570 270 ns ns Turn-on Current Slope V CC = 960 V R G = 1 KΩ T j = 125 o C IC = 7 A V GE = 15 V 800 A/µs 3.2 mJ Turn-on Switching Losses STGD7NB120S-1 ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tc t r (v off ) tf E o ff(**) Cross-O ver Time V CC = 960 V Off Voltage Rise Time R GE = 1000 Ω Fall T ime Turn-off Switching Loss IC = 7 A V GE = 15 V 4.9 2.9 3.3 15 µs µs µs mJ tc t r (v off ) tf E o ff(**) Cross-O ver Time V CC = 960 V Off Voltage Rise Time R GE = 1000 Ω Fall T ime T j = 125 o C Turn-off Switching Loss IC = 7 A V GE = 15 V 7.5 5.5 6.2 22 µs µs µs mJ (•) Pulse width limited by safe operating area (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) 3/6 STGD7NB120S-1 Switching Off Safe Operatin Area Fig. 1: Gate Charge test Circuit Fig. 3: Switching Waveforms 4/6 Fig. 2: Test Circuit For Inductive Load Switching STGD7NB120S-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 5/6 STGD7NB120S-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6