STMICROELECTRONICS STGD7NB120S-1

STGD7NB120S-1

N-CHANNEL 7A - 1200V IPAK
Power MESH IGBT
PRELIMINARY DATA
T YPE
V CES
V CE(sat)
IC
STGD7NB120S-1
1200 V
< 2.1 V
7 A
■
■
■
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (Vcesat)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
3
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
2
1
IPAK
TO-251
(Suffix ”-1”)
APPLICATIONS
■ LIGHT DIMMER
■ INRUSH CURRENT LIMITATION
■ MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V CES
Collector-Emitter Voltage (VGS = 0)
V ECR
Reverse Battery Protection
V GE
G ate-Emitter Voltage
o
IC
Collector Current (continuous) at Tc = 25 C
IC
Collector Current (continuous) at Tc = 100 C
I CM (•)
P tot
T s tg
Tj
Value
Un it
1200
V
20
V
± 20
V
10
A
7
A
20
A
T otal Dissipation at Tc = 25 C
55
W
Derating Factor
0.4
W /o C
o
Collector Current (pulsed)
o
Storage T emperature
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
April 2000
1/6
STGD7NB120S-1
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
T yp
o
2.27
100
1.5
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
V BR(CES)
Collector-Emitt er
Breakdown Voltage
I C = 250 µA
V BR(ECR)
Emitter-Collector
Breakdown Voltage
IC = 10 mA
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = 0.8 Max Rating
IGES
Gate-Emitter Leakage
Current (VCE = 0)
V GE = ± 20 V
V GE = 0
V GE = 0
Min.
Typ.
Max.
Unit
1200
V
20
V
T j = 25 oC
o
T j = 125 C
V CE = 0
250
1000
µA
µA
± 100
nA
Max.
Unit
5
V
ON (∗)
Symbo l
V GE(th)
V GE
V CE(SAT )
Parameter
Test Con ditions
IC = 250 µA
Min.
Typ.
Gate Threshold
Voltage
V CE = V GE
3
Gate Emitter Voltage
V CE = 2.5V
I C = 2A T j =25 ÷125 oC
6.5
V
Collector-Emitt er
Saturation Voltage
V GE = 15 V
V GE = 15 V
V GE = 15 V
IC = 3.5 A
IC = 7 A
IC = 10 A
1.6
2.1
V
V
V
Max.
Unit
1.7
DYNAMIC
Symbo l
gf s
Parameter
Test Con ditions
Forward
Transconductance
V CE =25 V
IC = 7 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
f = 1 MHz
QG
Gate Charge
V CE = 960 V
I CL
Latching Current
V clamp = 960 V
T j = 150 o C
C i es
C o es
C res
IC = 7 A
Min.
Typ.
2.5
4.5
S
V GE = 0
430
40
7
pF
pF
pF
V GE = 15 V
29
nC
R G =1kΩ
10
A
SWITCHING ON
Symbo l
t d(on)
tr
(di/dt) on
Eo n
2/6
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
Delay Time
Rise Time
V CC = 960 V
V GE = 15 V
IC = 7 A
R G = 1 KΩ
570
270
ns
ns
Turn-on Current Slope
V CC = 960 V
R G = 1 KΩ
T j = 125 o C
IC = 7 A
V GE = 15 V
800
A/µs
3.2
mJ
Turn-on
Switching Losses
STGD7NB120S-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
tf
E o ff(**)
Cross-O ver Time
V CC = 960 V
Off Voltage Rise Time R GE = 1000 Ω
Fall T ime
Turn-off Switching Loss
IC = 7 A
V GE = 15 V
4.9
2.9
3.3
15
µs
µs
µs
mJ
tc
t r (v off )
tf
E o ff(**)
Cross-O ver Time
V CC = 960 V
Off Voltage Rise Time R GE = 1000 Ω
Fall T ime
T j = 125 o C
Turn-off Switching Loss
IC = 7 A
V GE = 15 V
7.5
5.5
6.2
22
µs
µs
µs
mJ
(•) Pulse width limited by safe operating area
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
3/6
STGD7NB120S-1
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
4/6
Fig. 2: Test Circuit For Inductive Load Switching
STGD7NB120S-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
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STGD7NB120S-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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