STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT TYPE STGP3NB60S STGD3NB60S ■ ■ ■ ■ VCES VCE(sat) IC 600 V 600 V < 1.5 V < 1.5 V 3A 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD VERSION) 3 1 3 1 2 DPAK TO-220 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ MOTOR CONTROL ■ LIGHT DIMMER ■ STATIC RELAYS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STGP3NB60S Unit STGD3NB60S VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C 6 A IC Collector Current (continuous) at TC = 100°C 3 A Collector Current (pulsed) 24 A ICM () PTOT Total Dissipation at TC = 25°C Derating Factor Tstg Tj Storage Temperature Max. Operating Junction Temperature 65 45 W 0.32 W/°C –65 to 150 °C 150 °C (● ) Pulse width limited by safe operating area August 2002 1/10 STGP3NB60S - STGD3NB60S THERMAL DATA TO-220 DPAK 2.75 Rthj-case Thermal Resistance Junction-case Max 1.92 Rthj-amb Thermal Resistance Junction-ambient Max 62.5 Rthc-h Thermal Resistance Case-heatsink Typ °C/W 100 °C/W 0.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 Min. Typ. Max. 600 Unit V VCE = Max Rating, TC = 25 °C 10 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ±20V , VCE = 0 ±100 nA Max. Unit 5 V 1.2 1 1.5 V Min. Typ. Max. Unit 1.7 2.5 S 255 pF ON (1) Symbol Parameter Test Conditions VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 3 A VGE = 15V, IC = 1 A Min. Typ. 2.5 DYNAMIC Symbol gfs Parameter Forward Transconductance Test Conditions VCE = 25 V , IC = 3 A VCE = 25V, f = 1 MHz, VGE = 0 Cies Input Capacitance Coes Output Capacitance 30 pF Cres Reverse Transfer Capacitance 5.6 pF QG QGE QGC Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480 V, IC = 3 A, VGE = 15V 18 5.4 5.5 nC nC nC Latching Current Vclamp = 480 V , Tj = 150°C RG = 1KΩ ICL 12 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon 2/10 Parameter Test Conditions Rise Time VCC = 480 V, IC = 3 A RG = 1KΩ , VGE = 15 V Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 3 A, RG=1KΩ VGE = 15 V, Tj = 125°C Turn-on Delay Time Min. Typ. Max. Unit 170 ns 540 ns 300 A/µs µJ STGP3NB60S - STGD3NB60S ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol Parameter Test Conditions tc tr(Voff) td(off) tf Eoff(**) Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vcc = 480 V, IC = 3 A, RGE = 1KΩ , VGE = 15 V tc tr(Voff) td(off) tf Eoff(**) Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vcc = 480 V, IC = 3 A, RGE = 1KΩ , VGE = 15 V, Tj = 150°C Min. Typ. Max. Unit 1.8 1.0 3.4 0.72 1.15 µs µs µs µs mJ 2.8 1.45 3.6 1.2 1.8 µs µs µs µs mJ Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/10 STGP3NB60S - STGD3NB60S Safe Operating Area for TO-220 Thermal Impedance for TO-220 Thermal Impedance for DPAK 4/10 Safe Operating Area for DPAK STGP3NB60S - STGD3NB60S Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 5/10 STGP3NB60S - STGD3NB60S Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature 6/10 Total Switching Losses vs Collector Current STGP3NB60S - STGD3NB60S Switching Off Safe Operating Area Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/10 STGP3NB60S - STGD3NB60S TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/10 L4 P011C STGP3NB60S - STGD3NB60S TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 9/10 STGP3NB60S - STGD3NB60S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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