STGP10NB60SFP N-CHANNEL 10A - 600V - TO-220FP PowerMesh™ IGBT TYPE STGP10NB60SFP ■ ■ ■ ■ VCES VCE(sat) IC 600 < 1.7 V 10 A HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 1 2 TO-220FP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ LIGHT DIMMER ■ STATIC RELAYS ■ MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VCES Collector-Emitter Voltage (VGS = 0) Parameter 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C 20 A IC Collector Current (continuous) at TC = 100°C 10 A Collector Current (pulsed) 80 A 31.5 W ICM (n) PTOT Total Dissipation at TC = 25°C Derating Factor Tstg Tj Storage Temperature Max. Operating Junction Temperature 0.21 W/°C –65 to 150 °C 150 °C (● ) Pulse width limited by safe operating area June 2002 1/8 STGP10NB60SFP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ 4.7 °C/W 62.5 °C/W 0.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Break-down Voltage IC = 250 µA, VGE = 0, 600 V VBR(CES) Emitter Collector Break-down Voltage IC = 1 mA, VGE = 0, 20 V ICES Collector cut-off Current (VGE = 0) VCE = Max Rating ,Tj =25 °C VCE = Max Rating ,Tj =125 °C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 10 100 µA µA ± 100 nA Max. Unit 5 V 1.15 1.35 1.25 1.7 V V V Typ. Max. Unit ON (1) Symbol VGE(th) VCE(SAT) Parameter Test Conditions Gate Threshold Voltage VCE = VGE, IC = 250µA Collector-Emitter Saturation Voltage VGE =15V, VGE =15V, VGE =15V, Min. Typ. 2.5 IC = 5 A, Tj= 25°C IC = 10 A, Tj= 25°C IC = 10 A, Tj= 125°C DYNAMIC Symbol 2/8 Parameter gfs Forward Transconductance Cies Input Capacitance Coes Cres Test Conditions VCE = 25 V , IC =10 A Min. 5 VCE = 25V, f = 1 MHz, VGE = 0 S 610 pF Output Capacitance 65 pF Reverse Transfer Capacitance 12 pF 33 nC Qg Gate Charge VCE = 400V, IC = 10 A, VGE = 15V ICL Latching Current Vclamp= 480V, RG= 1kΩ, Tj= 125°C 20 A STGP10NB60SFP SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit 0.7 µs Rise Time VCC = 480 V, IC = 10 A RG = 1KΩ , VGE = 15 V 0.46 µs Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 10 A RG=1KΩ, VGE = 15 V 8 0.6 A/µs mJ Turn-on Delay Time SWITCHING OFF Symbol tc tr(Voff) tf Eoff(**) tc tr(Voff) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Test Conditions Vclamp = 480 V, IC = 10 A, RGE = 1K Ω , VGE = 15 V Fall Time Turn-off Switching Loss Min. Typ. Max. Unit 2.2 µs 1.2 µs 1.2 µs 5.0 mJ 3.8 µs 1.2 µs Fall Time 1.9 µs Turn-off Switching Loss 8.0 mJ Cross-over Time Off Voltage Rise Time Vclamp = 480 V, IC = 10 A, RGE = 1KΩ , VGE = 15 V Tj = 125 °C (●)Pulsed: Pulse duration = 300 µ s, duty cycle 1.5 %. (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail Switching Off Safe Operating Area Thermal Impedance 3/8 STGP10NB60SFP Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold Voltage vs Temperature 4/8 STGP10NB60SFP Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Collector Current Normalized Break-down Voltage vs Temp. Off Losses vs Temperature 5/8 STGP10NB60SFP Fig. 1: Gate Charge test Circuit 6/8 Fig. 2: Test Circuit For Inductive Load Switching STGP10NB60SFP TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 L2 L5 1 2 3 L4 7/8 STGP10NB60SFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8