STGF10NB60SD N-CHANNEL 10A - 600V TO-220FP PowerMESH™ IGBT TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGF10NB60SD 600 < 1.8 V 10 A ■ ■ ■ ■ ■ HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE DESCRIPTION 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS ■ LIGHT DIMMER ■ STATIC RELAYS ■ MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCES Collector-Emitter Voltage (VGS = 0) VECR Reverse Battery Protection VGE Gate-Emitter Voltage Value Unit 600 V 20 V ± 20 V IC Collector Current (continuous) at TC = 25°C 20 A IC Collector Current (continuous) at TC = 100°C 10 A ICM (● ) PTOT Collector Current (pulsed) 80 A Total Dissipation at TC = 25°C 25 W Derating Factor 0.2 W/°C 2500 V –65 to 150 °C 150 °C VISO Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) Tstg Storage Temperature Tj Max. Operating Junction Temperature (● ) Pulse width limited by safe operating area June 2003 1/8 STGF10NB60SD THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 5 °C/W 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter VBR(CES) Collector-Emitter Break-down Voltage IC = 250 µA, VGE = 0, Test Conditions Min. 600 Typ. Max. Unit V VBR(CES) Emitter Collector Break-down Voltage IC = 1 mA, VGE = 0, 20 V ICES Collector cut-off Current (VGE = 0) VCE = Max Rating ,Tj =25 °C VCE = Max Rating ,Tj =125 °C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 10 100 µA µA ± 100 nA Max. Unit 5 V 1.15 1.35 1.25 1.8 V V V Typ. Max. Unit ON (1) Symbol VGE(th) VCE(SAT) Parameter Test Conditions Gate Threshold Voltage VCE = VGE, IC = 250µA Collector-Emitter Saturation Voltage VGE =15V, IC = 5 A, Tj= 25°C VGE =15V, IC = 10 A, Tj= 25°C VGE =15V, IC = 10 A, Tj= 125°C Min. Typ. 2.5 DYNAMIC Symbol gfs Cies Coes Cres 2/8 Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VCE = 25 V , IC =10 A Min. 5 VCE = 25V, f = 1 MHz, VGE = 0 Qg Gate Charge VCE = 400V, IC = 10 A, VGE = 15V ICL Latching Current Vclamp= 480V, RG= 1kΩ, Tj= 125°C 20 S 610 65 12 pF pF pF 33 nC A STGF10NB60SD SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit Rise Time VCC = 480 V, IC = 10 A RG = 1KΩ , VGE = 15 V 0.46 µs Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 10 A RG=1KΩ, VGE = 15 V 8 0.6 A/µs mJ Turn-on Delay Time 0.7 µs SWITCHING OFF Symbol tc tr(Voff) tf Eoff(**) tc tr(Voff) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Test Conditions Min. Vclamp = 480 V, IC = 10 A, RGE = 1K Ω , VGE = 15 V Fall Time Turn-off Switching Loss Typ. Max. Unit 2.2 µs 1.2 µs 1.2 µs 5.0 mJ 3.8 µs 1.2 µs Fall Time 1.9 µs Turn-off Switching Loss 8.0 mJ Cross-over Time Off Voltage Rise Time Vclamp = 480 V, IC = 10 A, RGE = 1KΩ , VGE = 15 V Tj = 125 °C COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 3.5 A If = 3.5 A, Tj = 125 °C 1.4 1.15 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 7 A ,VR = 20 V, Tj =125°C, di/dt = 100A/µs 50 70 2.7 trr Qrr Irrm Max. Unit 7 56 A A 1.9 V V ns nC A (●)Pulsed: Pulse duration = 300 µ s, duty cycle 1.5 %. (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail Switching Off Safe Operating Area Thermal Impedance 3/8 STGF10NB60SD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold Voltage vs Temperature 4/8 STGF10NB60SD Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Collector Current Normalized Break-down Voltage vs Temp. Off Losses vs Temperature 5/8 STGF10NB60SD Emitter-Collector Diode Characteristics Fig. 1: Gate Charge test Circuit 6/8 Fig. 2: Test Circuit For Inductive Load Switching STGF10NB60SD TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 L2 L5 1 2 3 L4 7/8 STGF10NB60SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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