020 -6 PMCPB5530X DF N2 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disc and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 26 34 mΩ VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C - 55 70 mΩ Tj = 25 °C - - 20 V -12 - 12 V - - 5.3 A TR1 (N-channel), Static characteristics RDSon drain-source on-state resistance TR2 (P-channel), Static characteristics RDSon drain-source on-state resistance TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C - - -20 V -12 - 12 V - - -4.5 A TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage drain current ID [1] VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 7 1 Graphic symbol D1 4 D2 8 2 3 7 D1 drain TR1 Transparent top view 8 D2 drain TR2 DFN2020-6 (SOT1118) S2 G2 G1 S1 017aaa261 3. Ordering information Table 3. Ordering information Type number Package PMCPB5530X Name Description Version DFN2020-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1118 4. Marking Table 4. Marking codes Type number Marking code PMCPB5530X 1W 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - 20 V -12 12 V TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 2 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 5.3 A VGS = 4.5 V; Tamb = 25 °C [1] - 4 A VGS = 4.5 V; Tamb = 100 °C [1] - 2.6 A - 12 A [2] - 490 mW [1] - 1170 mW - 8330 mW - 1.2 A - -20 V IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C TR1 (N-channel), Source-drain diode source current IS Tamb = 25 °C [1] TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage ID drain current Tj = 25 °C -12 12 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -4.5 A VGS = -4.5 V; Tamb = 25 °C [1] - -3.4 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.2 A - -14 A [2] - 490 mW [1] - 1170 mW - 8330 mW - -1.2 A -55 150 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C TR2 (P-channel), Source-drain diode source current IS Tamb = 25 °C [1] Per device Tj junction temperature Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 3 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. −25 25 75 125 0 −75 175 Tj (°C) Normalized total power dissipation as a function of junction temperature Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature 017aaa637 102 ID (A) Limit RDSon = VDS/ID 10 tp = 10 μs tp = 100 μs 1 DC; Tsp = 25 °C 10-1 tp = 10 ms tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 1 102 10 VDS (V) IDM = single pulse Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 4 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 017aaa410 -102 ID (A) Limit RDSon = VDS/ID -10 (1) (2) -1 (3) (4) (5) -10-1 (6) -10-2 -10-1 -1 -102 -10 VDS (V) IDM = single pulse (1) tp = 10 µs (2) tp = 100 µs (3) DC; Tsp = 25 °C (4) tp = 10 ms (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - 223 256 K/W [2] - 93 107 K/W [3] - 55 63 K/W - 10 15 K/W [1] - 223 256 K/W [2] - 93 107 K/W [3] - 55 63 K/W - 10 15 K/W TR1 (N-channel) Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point TR2 (P-channel) Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2, t ≤ 5 s. PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 5 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 11 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 26 34 mΩ VGS = 4.5 V; ID = 3 A; Tj = 150 °C - 49 63 mΩ VGS = 2.5 V; ID = 1.4 A; Tj = 25 °C - 33 46 mΩ VGS = 1.8 V; ID = 1.4 A; Tj = 25 °C - 50 69 mΩ VDS = 5 V; ID = 3 A; Tj = 25 °C - 12 - S - 14.4 21.7 nC - 1.1 - nC - 1.5 - nC RDSon gfs drain-source on-state resistance transfer conductance TR1 (N-channel), Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 10 V; ID = 3 A; VGS = 4.5 V; Tj = 25 °C VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 660 - pF - 87 - pF - 74 - pF - 4 - ns - 15 - ns turn-off delay time - 40 - ns fall time - 16 - ns IS = 1.2 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V VDS = 10 V; ID = 3 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C TR1 (N-channel), Source-drain diode characteristics VSD source-drain voltage TR2 (P-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.47 -0.65 -0.9 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 6 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit RDSon drain-source on-state resistance VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C - 55 70 mΩ VGS = -4.5 V; ID = -3.4 A; Tj = 150 °C - 78 99 mΩ VGS = -2.5 V; ID = -3 A; Tj = 25 °C - 75 90 mΩ VGS = -1.8 V; ID = -1.5 A; Tj = 25 °C - 110 135 mΩ VDS = -10 V; ID = -3.4 A; Tj = 25 °C - 15 - S - 8.1 12.2 nC - 1.2 - nC - 1.5 - nC - 785 - pF - 63 - pF - 53 - pF - 4 - ns - 14 - ns transfer conductance gfs TR2 (P-channel), Dynamic characteristics QG(tot) total gate charge VDS = -10 V; ID = -3.4 A; VGS = -5 V; Tj = 25 °C QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 40 - ns tf fall time - 16 - ns - -0.8 -1.2 V VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -10 V; ID = -3.4 A; VGS = -5 V; RG(ext) = 6 Ω; Tj = 25 °C TR2 (P-channel), Source-drain diode characteristics source-drain voltage VSD IS = -1.2 A; VGS = 0 V; Tj = 25 °C 017aaa638 15 4.5 V 3.0 V 2.5 V ID (A) 017aaa639 10-3 2.0 V ID (A) 2.2 V 10-4 10 1.8 V min typ max 10-5 5 VGS = 1.5 V 10-6 0 0 2 4 0 6 0.5 VDS (V) Tj = 25 °C; VDS = 5 V TR1: Output characteristics: drain current as a function of drain-source voltage; typical values PMCPB5530X Product data sheet 1.5 VGS (V) Tj = 25 °C Fig 5. 1.0 Fig 6. TR1: Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 7 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 017aaa640 120 1.8 V RDSon (mΩ) 017aaa641 120 2V RDSon (mΩ) 80 80 2.5 V 40 Tj = 150 °C 40 3V VGS = 4.5 V Tj = 25 °C 0 0 0 4 8 12 0 4 8 ID (A) Tj = 25 °C Fig 7. 12 VGS (V) ID = 2 A TR1: Drain-source on-state resistance as a function of drain current; typical values Fig 8. 017aaa642 12 TR1: Drain-source on-state resistance as a function of gate-source voltage; typical values 017aaa643 1.8 ID (A) a 8 1.4 4 1.0 Tj = 150 °C Tj = 25 °C 0 0 1 2 3 0.6 -60 VGS (V) 0 60 120 180 Tj (°C) VDS > ID × RDSon Fig 9. TR1: Transfer characteristics: drain current as a function of gate-source voltage; typical values PMCPB5530X Product data sheet Fig 10. TR1: Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 8 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 017aaa644 1.5 017aaa645 103 Ciss C (pF) VGS(th) (V) 1.0 102 max Coss Crss typ 0.5 10 min 0 -60 0 60 120 180 1 10-1 1 102 10 Tj (°C) VDS (V) ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V Fig 11. TR1: Gate-source threshold voltage as a function of junction temperature Fig 12. TR1: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa646 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0 2 4 6 8 QG (nC) ID = 3 A; VDS = 10 V; Tamb = 25 °C Fig 13. TR1: Gate-source voltage as a function of gate charge; typical values PMCPB5530X Product data sheet Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 9 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 017aaa647 12 017aaa411 -4 -4.5 V ID (A) IS (A) -2.5 V -1.8 V -3 -1.4 V 8 VGS = -1.2 V -2 4 Tj = 150 °C Tj = 25 °C -1 -1.0 V 0 0 0 0.4 0.8 1.2 0 -1 -2 VSD (V) -3 VDS (V) VGS = 0 V Tj = 25 °C Fig 15. TR1: Source current as a function of source-drain voltage; typical values Fig 16. TR2: Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa412 -10-3 017aaa413 0.24 RDSon (Ω) ID (A) -1.2 V 0.16 (1) (2) (3) -10-4 VGS = -1.4 V -1.6 V 0.08 -2.5 V -4.5 V -10-5 0 0 -0.25 -0.50 -0.75 -1.00 -1.25 VGS (V) Tj = 25 °C; VDS = −5 V 0 -1 -2 -3 -4 ID (A) Tj = 25 °C (1) minimum values (2) typical values (3) maximum values Fig 17. TR2: Sub-threshold drain current as a function of gate-source voltage PMCPB5530X Product data sheet Fig 18. TR2: Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 10 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 017aaa414 1.0 017aaa415 -4 RDSon (Ω) ID (A) 0.8 -3 0.6 -2 (1) (2) 0.4 (2) (1) -1 0.2 0 0 0 -1 -2 -3 -4 0 -0.5 -1.0 -1.5 VGS (V) ID = -1 A VDS > ID × RDSon (1) Tj = 150 °C (1) Tj = 25 °C (2) Tj = 25 °C (2) Tj = 150 °C Fig 19. TR2: Drain-source on-state resistance as a function of gate-source voltage; typical values 017aaa416 2.0 -2.0 VGS (V) Fig 20. TR2: Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa417 -1.5 a VGS(th) (V) 1.5 -1.0 (1) 1.0 (2) -0.5 (3) 0.5 0 -60 0 60 120 180 0 -60 0 60 Tj (°C) 120 180 Tj (°C) ID = -0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values Fig 21. TR2: Normalized drain-source on-state resistance as a function of junction temperature; typical values PMCPB5530X Product data sheet Fig 22. TR2: Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 11 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 017aaa418 104 017aaa419 -6 C (pF) VGS (V) 103 -4 (1) 102 -2 (2) (3) 10 0 -1 0 -102 -10 0 2 VDS (V) 4 6 QG (nC) ID = −3.3 A; VDS = −10 V; Tamb = 25 °C f = 1 MHz; VGS = 0 V (1) Ciss (2) Coss (3) Crss Fig 23. TR2: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 24. TR2: Gate-source voltage as a function of gate charge; typical values 017aaa420 -4.0 IS (A) -3.0 -2.0 (1) (2) -1.0 0 0 -0.4 -0.8 -1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 25. TR2: Source current as a function of source-drain voltage; typical values PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 12 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 26. Duty cycle definition 9. Package outline 2.1 1.9 0.65 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig 27. DFN2020-6 (SOT1118) PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 13 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.45 (6×) 0.72 (2×) 0.82 (2×) sot1118_fr Fig 28. Reflow soldering footprint for SOT1118 (DFN2020-6) PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 14 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMCPB5530X v.1 20120626 Product data sheet - - PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 15 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 16 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] PMCPB5530X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 17 of 18 PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .13 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .15 Legal information. . . . . . . . . . . . . . . . . . . . . . . .16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Contact information. . . . . . . . . . . . . . . . . . . . . .17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 June 2012 Document identifier: PMCPB5530X