DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • Trench MOSFET technology NPN transistor built-in bias resistors Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 3. Applications • • • • • Charging switch for portable devices High-side load switch USB port overvoltage protection Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C - - -30 V -12 - 12 V - - -3.4 A P-channel Trench MOSFET VDS drain-source voltage VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] P-channel Trench MOSFET; static characteristics RDSon drain-source on-state resistance VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C - 85 110 mΩ VCEO collector-emitter voltage Tamb = 25 °C; open base - - 50 V IO output current - - 100 mA NPN RET Scan or click this QR code to view the latest information for this product PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor Symbol Parameter Conditions Min Typ Max Unit NPN RET R1 bias resistor 1 3.3 4.7 6.1 kΩ R2 bias resistor 2 - 47 - kΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 B base 3 D drain 4 S source 5 G gate 6 C collector 7 C collector 8 D drain Simplified outline 6 5 7 Graphic symbol 4 G C 8 R2 1 S 2 R1 3 Transparent top view DFN2020-6 (SOT1118) E B D 017aaa396 6. Ordering information Table 3. Ordering information Type number PMC85XP Package Name Description Version DFN2020-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm SOT1118 7. Marking Table 4. Marking codes Type number Marking code PMC85XP 1K PMC85XP Product data sheet All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 2 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - -30 V -12 12 V P-channel Trench MOSFET VDS drain-source voltage VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.4 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.6 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.6 A - -8 A [2] - 485 mW [1] - 1170 mW [2] - 8300 mW [1] - -1.2 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C P-channel Trench MOSFET; source-drain diode IS source current Tamb = 25 °C VCBO collector-base voltage Tamb = 25 °C; open emitter - 50 V VCEO collector-emitter voltage Tamb = 25 °C; open base - 50 V VEBO emitter-base voltage Tamb = 25 °C; open collector - 10 V VI input voltage positive - 30 V negative - -5 V NPN RET IO output current - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation [2] - 465 mW [1] - 985 mW [2] - 4160 mW Tamb = 25 °C Tsp = 25 °C Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C PMC85XP Product data sheet [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad [2] for drain 6 cm Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint. 2 All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 3 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature aaa-003661 -10 Limit RDSon = VDS/ID tp = 100 µs ID (A) -1 tp = 1 ms tp = 10 ms DC; Tsp = 25 °C -10-1 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - 223 256 K/W [2] - 93 107 K/W [2] - 55 63 K/W P-channel Trench MOSFET Rth(j-a) thermal resistance from junction to ambient PMC85XP Product data sheet in free air t ≤ 5 s; in free air All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 4 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit - 10 15 K/W [1] - 233 270 K/W [2] - 110 127 K/W - 25 30 K/W NPN RET Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) in free air thermal resistance from junction to solder point [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm 017aaa398 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.02 0.01 1 10-1 10-5 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. P-channel Trench MOSFET: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMC85XP Product data sheet All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 5 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor 017aaa399 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 10 0.1 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 10-1 1 102 10 tp (s) 103 2 P-channel Trench MOSFET: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit P-channel Trench MOSFET; static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -30 - - V VGSth gate-source threshold voltage ID = -250 mA; VDS = VGS; Tj = 25 °C -0.45 -0.78 -1 V IDSS drain leakage current VDS = -30 V; VGS = 0 V; Tamb = 25 °C - - -1 µA VDS = -30 V; VGS = 0 V; Tamb = 150 °C - - -11 µA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C - 85 110 mΩ VGS = -4.5 V; ID = -2.6 A; Tj = 150 °C - 133 173 mΩ VGS = -2.5 V; ID = -1.5 A; Tj = 25 °C - 105 140 mΩ VDS = -10 V; ID = -2.6 A; Tj = 25 °C - 10 - S IGSS RDSon gfs gate leakage current drain-source on-state resistance transfer conductance P-channel Trench MOSFET; dynamic characteristics QG(tot) total gate charge VDS = -15 V; ID = -2.6 A; VGS = -4.5 V; - 5.2 7.8 nC QGS gate-source charge Tj = 25 °C - 1.1 - nC QGD gate-drain charge - 0.95 - nC Ciss input capacitance VDS = -15 V; f = 1 MHz; VGS = 0 V; - 680 - pF Coss output capacitance Tj = 25 °C - 54 - pF PMC85XP Product data sheet All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 6 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor Symbol Parameter Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf Conditions Min Typ Max Unit - 40 - pF VDS = -15 V; ID = -2.6 A; RG(ext) = 6 Ω; - 3 - ns VGS = -4.5 V; Tj = 25 °C - 15 - ns turn-off delay time - 112 - ns fall time - 48 - ns P-channel Trench MOSFET; source-drain diode VSD source-drain voltage IS = -1.2 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V ICBO collector-base cut-off current VCB = 50 V; IE = 0 A; Tj = 25 °C - - 100 nA ICEO collector-emitter cut-off VCE = 30 V; IB = 0 A; Tj = 25 °C current VCE = 30 V; IB = 0 A; Tj = 150 °C - - 1 µA - - 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tj = 25 °C - - 170 µA hFE DC current gain VCE = 5 V; IC = 10 mA; Tj = 25 °C 100 - - VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA; Tj = 25 °C - - 100 mV VI(off) off-state input voltage IC = 100 µA; VCE = 5 V; Tj = 25 °C - 0.6 0.5 V VI(on) on-state input voltage IC = 5 mA; VCE = 0.3 V; Tj = 25 °C 1.3 0.9 - V R1 bias resistor 1 3.3 4.7 6.1 kΩ R2 bias resistor 2 - 47 - kΩ R2/R1 bias resistor ratio 8 10 12 CC collector capacitance - - 2.5 NPN RET IE = 0 A; ie = 0 A; f = 1 MHz; Tj = 25 °C; pF VCB = 10 V PMC85XP Product data sheet All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 7 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor -5 ID (A) aaa-003662 -4.5 V -1.8 V -4 017aaa401 -10-3 -2.5 V VGS = -1.7 V ID (A) -3 -10-4 -2 (1) (2) (3) -1.5 V -1 -1.2 V 0 Fig. 6. 0 -0,5 -1.0 -1.5 VDS (V) -10-5 -2.0 0 -0.25 -0.50 Tj = 25 °C Tj = 25 °C; VDS = −5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. aaa-003663 300 VGS = -1.6 V -0.75 Subthreshold drain current as a function of gate-source voltage aaa-003664 400 -1.8 V -0.10 -0.25 VGS (V) RDSon (mΩ) RDSon (mΩ) 300 200 -2.0 V 200 Tj = 150 °C -2.5 V 100 100 -4.5 V 0 0 -1 -2 -3 -4 ID (A) 0 -5 Tj = 25 °C Fig. 8. Product data sheet 0 -2 -4 VGS (V) -6 ID = -1 A Drain-source on-state resistance as a function of drain current; typical values PMC85XP Tj = 25 °C Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 8 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor 017aaa404 -3 017aaa405 2.0 a ID (A) 1.5 -2 1.0 -1 (2) (1) 0.5 0 0 -0.5 -1.0 -1.5 0 -60 -2.0 -2.5 VGS (V) VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa406 -1.5 017aaa407 103 (1) VGS(th) (V) C (pF) (1) -1.0 (2) -0.5 102 (3) (2) (3) 0 -60 0 60 120 Tj (°C) 10 180 0 -1 ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet VDS (V) -102 (2) Coss (3) Crss Fig. 12. Gate-source threshold voltage as a function of junction temperature PMC85XP -10 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 9 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor 017aaa408 -6 VDS VGS (V) ID -4 VGS(pl) VGS(th) VGS -2 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0 0 2 4 QG (nC) Fig. 15. Gate charge waveform definitions 6 ID = −3.3 A; VDS = −10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa409 -3.2 IS (A) -2.4 -1.6 (1) (2) -0.8 0 0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig. 16. Source current as a function of source-drain voltage; typical values PMC85XP Product data sheet All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 10 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 12. Package outline 2.1 1.9 0.65 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig. 18. Package outline DFN2020-6 (SOT1118) PMC85XP Product data sheet All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 11 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor 13. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.72 (2×) 0.45 (6×) 0.82 (2×) sot1118_fr Fig. 19. Reflow soldering footprint for DFN2020-6 (SOT1118) 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMC85XP v.2 20130515 Product data sheet - PMC85XP v.1 Modifications: • PMC85XP v.1 20120524 PMC85XP Product data sheet Pinning information: graphic symbol corrected Product data sheet - All information provided in this document is subject to legal disclaimers. 15 May 2013 - © NXP B.V. 2013. All rights reserved 12 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PMC85XP Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 13 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMC85XP Product data sheet All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 14 / 15 PMC85XP NXP Semiconductors 30 V P-channel MOSFET with pre-biased NPN transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ................................................... 11 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP B.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 May 2013 PMC85XP Product data sheet All information provided in this document is subject to legal disclaimers. 15 May 2013 © NXP B.V. 2013. All rights reserved 15 / 15