TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 25° 94 8389 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC DESCRIPTION TSAL6400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. and in • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Infrared remote control units with high power requirements • Free air transmission systems • Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 40 ± 25 940 800 TSAL6400 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSAL6400 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM Surge forward current tp = 100 µs IFSM 1.5 A PV 160 mW Power dissipation Junction temperature Operating temperature range Thermal resistance junction/ambient 100 °C - 40 to + 85 °C Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Storage temperature range Soldering temperature Tj Tamb Note Tamb = 25 °C, unless otherwise specified Document Number: 81011 Rev. 1.8, 29-Jun-09 For technical questions, contact: [email protected] www.vishay.com 1 TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 0 100 21212 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Temperature coefficient of VF Reverse current Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. TYP. MAX. UNIT VF 1.35 1.6 V VF 2.6 3 V IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 25 40 220 mV/K 10 µA 125 mW/sr 25 pF IF = 1 A, tp = 100 µs Ie 310 mW/sr IF = 100 mA, tp = 20 ms φe 35 mW IF = 20 mA TKφe - 0.6 %/K ϕ ± 25 deg nm Angle of half intensity Peak wavelength IF = 100 mA λp 940 Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise time IF = 100 mA tr 800 ns Fall time IF = 100 mA tf 800 ns Method: 63 % encircled energy d 2.2 mm Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81011 Rev. 1.8, 29-Jun-09 TSAL6400 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 Φ e - Radiant Power (mW) I F - Forward Current (A) 10 1 I FSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 -2 10 96 11987 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 1 0.1 10 0 10 2 13602 1.6 103 1.2 Ie rel; Φe rel 104 102 tP = 100 µs tP/T = 0.001 IF = 20 mA 0.8 0 - 10 0 10 100 0 1 2 3 4 VF - Forward Voltage (V) 13600 50 100 140 T amb - Ambient Temperature (°C) 94 7993 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 1.25 Φe rel - Relative Radiant Power I e - Radiant Intensity (mW/sr) 10 4 0.4 101 100 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0 0.1 100 96 12154 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Fig. 3 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 100 101 102 103 I F - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81011 Rev. 1.8, 29-Jun-09 890 104 14291 940 990 λ - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength For technical questions, contact: [email protected] www.vishay.com 3 TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 0° 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement I e rel - Relative Radiant Intensity 30° 80° 0.6 0.4 0.2 0 14330 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C ± 0.15 7.7 Ø 5.8 R 2.49 (sphere) < 0.7 ± 0.3 ± 0.55 8.7 (4.3) ± 0.15 A 35.1 Area not plane Ø 5 ± 0.15 + 0.2 - 0.1 1 min. 0.6 technical drawings according to DIN specifications 0.5 + 0.15 - 0.05 0.15 0.5 +- 0.05 2.54 nom. Drawing-No.: 6.544-5259.07-4 Issue: 4; 19.05.09 14340 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81011 Rev. 1.8, 29-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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