VISHAY TSHG5510

TSHG5510
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
FEATURES
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Package type: leaded
Package form: T-1¾
Dimensions (in mm): ∅ 5
Leads with stand-off
Peak wavelength: λp = 830 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: ϕ = ± 38°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: fc = 24 MHz
Good spectral matching to Si photodetectors
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
21061
DESCRIPTION
TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
in
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
32
± 38
830
15
TSHG5510
Note
Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
TSHG5510
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
200
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
Surge forward current
tp = 100 µs
IFSM
1
A
PV
180
mW
Power dissipation
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t ≤ 5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm soldered on PCB
RthJA
230
K/W
Junction temperature
Soldering temperature
Thermal resistance junction/ambient
Note
Tamb = 25 °C, unless otherwise specified
Document Number: 81887
Rev. 1.1, 25-Jun-09
For technical questions, contact: [email protected]
www.vishay.com
1
TSHG5510
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
120
200
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 230 K/W
100
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
21142
20
30
40
50
60
70 80
90 100
0
Tamb - Ambient Temperature (°C)
21143
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
IF = 100 mA, tp = 20 ms
VF
1.3
1.45
1.7
IF = 450 mA, tp = 100 µs
VF
1.5
1.75
2.1
IF = 1 A, tp = 100 µs
VF
2.1
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
Reverse current
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
IF = 1 A, tp = 100 µs
Ie
Forward voltage
Junction capacitance
Radiant intensity
mV/K
10
µA
54
mW/sr
110
18
32
320
V
V
pF
mW/sr
IF = 100 mA, tp = 20 ms
φe
55
mW
IF = 100 mA
TKφe
- 0.35
%/K
ϕ
± 38
deg
Peak wavelength
IF = 100 mA
λp
830
nm
Spectral bandwidth
IF = 100 mA
Δλ
55
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
IDC = 70 mA, IAC = 30 mA pp
fc
24
MHz
Radiant power
Temperature coefficient of φe
Angle of half intensity
Cut-off frequency
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: [email protected]shay.com
Document Number: 81887
Rev. 1.1, 25-Jun-09
TSHG5510
High Speed Infrared Emitting Diode, Vishay Semiconductors
830 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
Tamb < 50 °C
tP/T = 0.01
1000
φe - Radiant Power (mW)
IF - Forward Current (mA)
0.02
0.05
0.1
0.2
0.5
100
10
0.1
100
0.01
0.1
1
10
1
100
21062
tP - Pulse Duration (ms)
16031
Φe, rel - Relative Radiant Power
IF - Forward Current (A)
100
1000
1.25
10
1
0.1
0.01
1.0
0.75
0.5
0.25
0.001
0
0.5
1
1.5
2
2.5
3
3.5
0
740
4
VF - Forward Voltage (V)
21009
900
800
λ- Wavelength (nm)
16972_1
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength
1.1
Ie, rel - Relative Radiant Intensity
1000
Ie - Radiant Intensity (mW/sr)
10
IF - Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
Fig. 3 - Pulse Forward Current vs. Pulse Duration
100
10
1
tP = 100 µs
tP/T = 0.002
1
10
100
1000
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Document Number: 81887
Rev. 1.1, 25-Jun-09
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 90 - 70 - 50 - 30 - 10 0 10
0.1
21010
tP = 100 µs
tP/T = 0.002
1
21012
30
50
70
90
Angle (°)
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
For technical questions, contact: [email protected]
www.vishay.com
3
TSHG5510
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
Ø 5.9 ± 0.15
PACKAGE DIMENSIONS in millimeters
SR2.35
(1.72)
3.8 ± 0.15
C
9.5 ± 0.3
4.4 ± 0.3
A
Area not plane
1.1 ± 0.25
1 min.
31.4 ± 0.55
Ø 4.8 ± 0.15
+ 0.15
0.5 - 0.05
+ 0.15
0.5 - 0.05
2.54 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5390.01-4
Issue: 2; 19.05.09
20796
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4
For technical questions, contact: [email protected]
Document Number: 81887
Rev. 1.1, 25-Jun-09
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Document Number: 91000
Revision: 11-Mar-11
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