TSUS4400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 18° • Low forward voltage • Suitable for high pulse current operation 94 8636 • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION APPLICATIONS TSUS4400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package. • Infrared remote control and free air transmission systems with low forward voltage and small package requirements • Emitter in transmissive sensors • Emitter in reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 15 ± 18 950 800 TSUS4400 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 TSUS4400 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 2 A Power dissipation PV 170 mW Junction temperature Tj 100 °C Tamb - 40 to + 85 °C Operating temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W Storage temperature range Note Tamb = 25 °C, unless otherwise specified www.vishay.com 276 For technical questions, contact: [email protected] Document Number: 81054 Rev. 1.6, 05-Sep-08 TSUS4400 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 300 K/W 80 60 40 100 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 21315 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21316 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Breakdown voltage Junction capacitance Radiant intensity TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.3 1.7 IF = 1.5 A, tp = 100 µs VF 2.2 IF = 100 mA TKVF - 1.3 VR = 5 V IR IR = 100 µA V(BR) VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie MIN. mV/K 40 15 µA µA 30 7 V V 100 5 UNIT pF 35 mW/sr IF = 1.5 A, tp = 100 µs Ie 140 IF = 100 mA, tp = 20 ms φe 20 mW IF = 20 mA TKφe - 0.8 %/K ϕ ± 18 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 800 ns IF = 1.5 A tr 400 ns IF = 100 mA tf 800 ns IF = 1.5 A tf 400 ns d 2.1 mm Radiant power Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter mW/sr Note Tamb = 25 °C, unless otherwise specified Document Number: 81054 Rev. 1.6, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 277 TSUS4400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 I e - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 1 t p /T = 0.01, I FM = 2 A 0.02 10 0 0.05 0.1 0.2 100 10 1 0.5 10 -1 10 -2 94 7947 0.1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 10 0 Fig. 3 - Pulse Forward Current vs. Pulse Duration Φe - Radiant Power (mW) I F - Forward Current (mA) 1000 10 3 10 2 10 1 10 0 100 10 1 0.1 0 1 2 3 4 V F - Forward Voltage (V) 94 7996 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7980 Fig. 4 - Forward Current vs. Forward Voltage 10 4 Fig. 7 - Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA Ie rel; Φe rel VF rel - Relative Forward Voltage (V) 10 4 Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 -1 10 1 10 2 10 3 I F - Forward Current (mA) 94 7982 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature www.vishay.com 278 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81054 Rev. 1.6, 05-Sep-08 TSUS4400 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 0° I e rel - Relative Radiant Intensity Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 1000 950 0.6 λ - Wavelength (nm) 94 7994 10° 0.4 0.2 0 0.2 0.4 0.6 94 7983 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C 3.2 ± 0.15 A Area not plane 6.1 ± 0.3 2.9 0.6 ± 0.15 1.5 ± 0.25 30.6 ± 0.5 < 0.6 ± 0.1 3.5 (2.8) ± 0.3 4.5 R 1.4 (sphere) 0.4 ± 0.1 + 0.15 - 0.05 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5255.02-4 Issue: 3; 23.04.98 95 10914 Document Number: 81054 Rev. 1.6, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 279 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1