VISHAY TSUS4400

TSUS4400
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): ∅ 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
94 8636
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
DESCRIPTION
APPLICATIONS
TSUS4400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue tinted plastic package.
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
15
± 18
950
800
TSUS4400
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
TSUS4400
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
mA
Surge forward current
tp = 100 µs
IFSM
2
A
Power dissipation
PV
170
mW
Junction temperature
Tj
100
°C
Tamb
- 40 to + 85
°C
Operating temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t ≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
300
K/W
Storage temperature range
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: [email protected]
Document Number: 81054
Rev. 1.6, 05-Sep-08
TSUS4400
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
950 nm, GaAs
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 300 K/W
80
60
40
100
80
RthJA = 300 K/W
60
40
20
20
0
0
0
10
21315
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21316
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Breakdown voltage
Junction capacitance
Radiant intensity
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.3
1.7
IF = 1.5 A, tp = 100 µs
VF
2.2
IF = 100 mA
TKVF
- 1.3
VR = 5 V
IR
IR = 100 µA
V(BR)
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
MIN.
mV/K
40
15
µA
µA
30
7
V
V
100
5
UNIT
pF
35
mW/sr
IF = 1.5 A, tp = 100 µs
Ie
140
IF = 100 mA, tp = 20 ms
φe
20
mW
IF = 20 mA
TKφe
- 0.8
%/K
ϕ
± 18
deg
Peak wavelength
IF = 100 mA
λp
950
nm
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
IF = 100 mA
tr
800
ns
IF = 1.5 A
tr
400
ns
IF = 100 mA
tf
800
ns
IF = 1.5 A
tf
400
ns
d
2.1
mm
Radiant power
Temperature coefficient of φe
Angle of half intensity
Rise time
Fall time
Virtual source diameter
mW/sr
Note
Tamb = 25 °C, unless otherwise specified
Document Number: 81054
Rev. 1.6, 05-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
277
TSUS4400
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
I e - Radiant Intensity (mW/sr)
IF - Forward Current (A)
10 1
t p /T = 0.01, I FM = 2 A
0.02
10 0
0.05
0.1
0.2
100
10
1
0.5
10 -1
10 -2
94 7947
0.1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
10 2
10 0
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Φe - Radiant Power (mW)
I F - Forward Current (mA)
1000
10 3
10 2
10 1
10 0
100
10
1
0.1
0
1
2
3
4
V F - Forward Voltage (V)
94 7996
10 0
10 1
10 2
10 3
I F - Forward Current (mA)
94 7980
Fig. 4 - Forward Current vs. Forward Voltage
10 4
Fig. 7 - Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
IF = 10 mA
Ie rel; Φe rel
VF rel - Relative Forward Voltage (V)
10 4
Fig. 6 - Radiant Intensity vs. Forward Current
10 4
10 -1
10 1
10 2
10 3
I F - Forward Current (mA)
94 7982
1.0
0.9
IF = 20 mA
0.8
0.4
0.8
0.7
0
94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
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278
0
- 10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 81054
Rev. 1.6, 05-Sep-08
TSUS4400
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
950 nm, GaAs
0°
I e rel - Relative Radiant Intensity
Φe rel - Relative Radiant Power
1.25
1.0
0.75
0.5
0.25
IF = 100 mA
0
900
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
1000
950
0.6
λ - Wavelength (nm)
94 7994
10°
0.4
0.2
0
0.2
0.4
0.6
94 7983
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
C
3.2
± 0.15
A
Area not plane
6.1 ± 0.3
2.9
0.6 ± 0.15
1.5 ± 0.25
30.6
± 0.5
< 0.6
± 0.1
3.5
(2.8)
± 0.3
4.5
R 1.4 (sphere)
0.4
± 0.1
+ 0.15
- 0.05
2.54 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5255.02-4
Issue: 3; 23.04.98
95 10914
Document Number: 81054
Rev. 1.6, 05-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
279
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Vishay
Disclaimer
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or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
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