TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions (L x W x H in mm): 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power 14354-1 • High radiant intensity • Angle of half intensity: ϕ = ± 30° • Low forward voltage • Suitable for high pulse current operation DESCRIPTION • Good spectral matching with Si photodetectors The TSKS5400-FSZ is an infrared, 950 nm emitting diode in GaAs technology with high radiant power, molded in a clear plastic package. • Package matched with detector TEKS5400 • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Photointerrupters • Transmissive sensors, gap sensors • Reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) TSKS5400-FSZ 4.5 ± 30 950 800 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSKS5400-FSZ PACKAGING REMARKS PACKAGE FORM Tape and ammopack MOQ: 2000 pcs, 2000 pcs/ammopack Side view lens Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 6 V Forward current IF 100 mA tp ≤ 100 µs Surge forward current UNIT IFSM 2 A Power dissipation PV 170 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 25 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 270 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 83780 Rev. 2.3, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 215 TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 270 K/W 80 60 40 100 80 60 RthJA = 270 K/W 40 20 20 0 0 0 10 21321 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21322 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS TEST CONDITION SYMBOL Forward voltage PARAMETER IF = 100 mA, tp ≤ 20 ms VF Reverse voltage IR = 10 µA VR IF = 100 mA TKVF - 1.3 mV/K VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF Temperature coefficient of VF Junction capacitance MIN. TYP. MAX. 1.3 1.7 UNIT V 6 V Radiant intensity IF = 100 mA, tp ≤ 20 ms Ie Radiant power IF = 50 mA, tp ≤ 20 ms φe 10 mW IF = 50 mA TKφe - 0.8 %/K ϕ ± 30 deg Peak wavelength IF = 50 mA λp 950 nm Spectral bandwidth IF = 50 mA Δλ 50 nm IF = 100 mA tr 800 ns IF = 1 A, tp/T = 0.01, tp ≤ 10 µs tr 450 ns Temperature coefficient of φe Angle of half sensitivity Rise time 2 4.5 7 mW/sr Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 1.5 V F - Forward Voltage I F - Forward Current (mA) 1.4 I F = 10 mA 10 3 10 2 10 1 10 0 10 -1 0 94 7996 1 2 3 Fig. 3 - Pulse Forward Current vs. Forward Voltage www.vishay.com 216 1.2 1.1 1.0 0.9 0.8 -45 -30 -15 4 V F - Forward Voltage (V) 1.3 14347 0 15 30 45 60 75 90 Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 83780 Rev. 2.3, 05-Sep-08 TSKS5400 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 1.25 Φe rel - Relative Radiant Power Ie - Radiant Intensity (mw/sr) 100 10 1 t p /T = 0.001 t p = 100 µs 0.1 0.01 10 0 10 1 10 2 10 3 0.75 0.5 0.25 IF = 100 mA 0 900 10 4 I F - Forward Current (mA) 94 7913 1.0 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength I e rel - Relative Radiant Intensity 0° Φ e - Radiant Power (mW) 100 10 1 1000 950 λ - Wavelength (nm) 94 7994 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 1 10 100 1000 I F - Forward Current (mA) 13718 Fig. 6 - Radiant Power vs. Forward Current 0.6 0.4 0.2 0 0.2 0.4 0.6 14349 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 I F = 10 mA 1.4 I e rel; Φe rel 1.2 1.0 0.8 0.6 0.4 0.2 0.0 - 45 - 30 - 15 14348 0 15 30 45 60 75 90 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature Document Number: 83780 Rev. 2.3, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 217 TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs PACKAGE DIMENSIONS in millimeters 14345 www.vishay.com 218 For technical questions, contact: [email protected] Document Number: 83780 Rev. 2.3, 05-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1