VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 60° 94 8553 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matched with IR emitter series VEMT3700 DESCRIPTION • Floor life: 168 h, MSL 3, acc. J-STD-020 VSML3710 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in a PLCC-2 package for surface mounting (SMD). • Lead (Pb)-free reflow soldering • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • IR emitter in photointerrupters, sensors and reflective sensors • IR emitter in low space applications • Household appliance • Tactile keyboards PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 8 ± 60 940 800 VSML3710 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSML3710-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSML3710-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81300 Rev. 1.4, 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 1 VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 160 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Acc. figure 11, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 21343 10 20 30 40 50 60 70 80 90 0 100 Tamb - Ambient Temperature (°C) 21344 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.35 1.6 V IF = 1 A, tp = 100 μs VF 2.6 3 V IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie MIN. mV/K 100 μA 20 mW/sr 25 4 8 UNIT pF IF = 1 A, tp = 100 μs Ie 60 IF = 100 mA, tp = 20 ms φe 35 mW IF = 100 mA TKφe - 0.6 %/K ϕ ± 60 deg Peak wavelength IF = 100 mA λp 940 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 20 mA tr 800 ns IF = 1 A tr 500 ns IF = 20 mA tf 800 ns IF = 1 A tf 500 ns d 0.44 mm Radiant power Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter mW/sr Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81300 Rev. 1.4, 03-Nov-09 VSML3710 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 100 10 000 I e - Radiant Intensity (mW/sr) Tamb < 60 °C tp/T = 0.005 IF - Forward Current (mA) 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1 0.01 0.1 1 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 15903 10 4 Fig. 6 - Radiant Intensity vs. Forward Current Fig. 3 - Pulse Forward Current vs. Pulse Duration 104 1000 Radiant Power (mW) IF - Forward Current (mA) 1 100 10 tp - Pulse Length (ms) 95 9985 10 103 102 10 Φe - tP = 100 µs tP/T = 0.001 100 101 100 0 1 2 3 0.1 10 0 4 VF - Forward Voltage (V) 13600 1 10 1 10 2 10 3 I F - Forward Current (mA) 94 8740 10 4 Fig. 7 - Radiant Power vs. Forward Current Fig. 4 - Forward Current vs. Forward Voltage 1.2 1.6 1.1 1.2 Ie rel; Φe rel IF - Forward Voltage (V) IF = 1 mA 1.0 0.9 0.8 0.4 0.8 0.7 0 16848 IF = 20 mA 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 5 - Forward Voltage vs. Ambient Temperature Document Number: 81300 Rev. 1.4, 03-Nov-09 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 3 VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 0° 10° 20° 1.0 0.75 0.5 0.25 IF = 100 mA 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° Ie, rel - Relative Radiant Intensity Φe rel - Relative Radiant Power 1.25 80° 0 890 0.6 990 940 0.4 0.2 0 94 8013 λ - Wavelength (nm) 14291 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters technical drawings according to DIN specifications 0.9 1.75 ± 0.1 3.5 ± 0.2 Pin identification Mounting Pad Layout 4 A area covered with solder resist 2.6 (2.8) C 2.2 2.8 ± 0.15 1.2 4 1.6 (1.9) Ø 2.4 3 + 0.15 Drawing-No.: 6.541-5067.01-4 Issue: 5; 04.11.08 20541 DRYPACK SOLDER PROFILE 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 50 100 150 200 250 300 Time (s) Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 www.vishay.com 4 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. DRYING 0 19841 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. For technical questions, contact: [email protected] Document Number: 81300 Rev. 1.4, 03-Nov-09 VSML3710 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Adhesive tape 10.0 9.0 120° Blister tape 4.5 3.5 13.00 12.75 2.5 1.5 Component cavity 94 8670 Fig. 12 - Blister Tape Identification Label: Vishay type group tape code production code quantity 2.2 2.0 3.5 3.1 4.1 3.9 94 8665 4.0 3.6 10.4 8.4 120° 8.3 7.7 4.5 3.5 2.5 1.5 1.85 1.65 1.6 1.4 14.4 max. 180 178 Fig. 15 - Dimensions of Reel-GS08 5.75 5.25 3.6 3.4 63.5 60.5 13.00 12.75 62.5 60.0 0.25 4.1 3.9 2.05 1.95 94 8668 Fig. 13 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 94 8158 Identification Label: Vishay type group tape code production code quantity 321 329 14.4 max. 18857 Fig. 16 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 14 - Beginning and End of Reel Document Number: 81300 Rev. 1.4, 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1