Band Switching Diodes MA2C859 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max. ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −55 to +100 °C 13 min. 2.2 ± 0.3 1st Band 2nd Band 13 min. 1 0.2 max. • Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole • Less voltage dependence of the terminal capacitance Ct • Low forward dynamic resistance rf • Optimum for a band switching of a tuner COLORED BAND INDICATES CATHODE 0.2 max. ■ Features 2 φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 ■ Electrical Characteristics Ta = 25°C Parameter Reverse current Symbol (DC)*1 Conditions Min Typ Max Unit IR VR = 33 V 100 nA VF IF = 100 mA 1.0 V Terminal capacitance Ct VR = 6 V, f = 1 MHz 0.8 1.2 pF Forward dynamic resistance r f* 2 IF = 2 mA, f = 100 MHz 0.5 0.65 Ω 0.77 0.98 Ω Forward voltage (DC) rf *3 Note) 1.Rated input/output frequency: 100 MHz 2.*1 : Measurement in light shielded condition *2 : rf measuring instrument: Nihon Koshuha MODEL TDC-121A Lead length 5mm *3 : rf measuring instrument: YHP 4191A Lead length 5mm ■ Cathode Indication Type No. Color MA2C859 1st Band Black 2nd Band Blue 1 MA2C859 Band Switching Diodes IF V F IR T a IR V R 102 103 103 Ta = 85°C VR = 33 V 10−1 Ta = 85°C 10−3 − 20°C 50°C 10 25°C 1 0 0.2 0.4 0.6 0.8 1.0 10−1 1.2 0 10 20 rf f 30 40 10−1 −40 50 8 6 4 2 10 30 IF = 2 mA Ta = 25°C rf Tester: YHP4191A 14 12 10 8 6 4 2 0 100 1 2 3 rf IF 5 10 20 30 50 Terminal capacitance Ct (pF) 2.0 1.6 1.2 0.8 10 0.8 0.4 0 0.1 1 30 Forward current IF (mA) 100 10 100 If(surge) tW 1.6 1.2 0.8 0.4 0 3 1.2 1 000 0.4 1 1.6 Forward current IF (mA) f = 1 MHz Ta = 25°C f = 1 000 MHz Ta = 25°C rf Tester: YHP4191A 0.3 2.0 Ct VR 2.4 0 0.1 2.4 100 2.0 2.8 120 f = 100 MHz Ta = 25°C rf Tester: TDC-121A 2.8 Frequency f (MHz) 3.2 80 r f If 0 10 20 30 40 Reverse voltage VR (V) 50 Forward surge current IF(surge) (A) 3 40 3.2 Forward dynamic resistance rf (Ω) IF = 2 mA Ta = 25°C rf Tester: TDC-121A 1 0 Ambient temperature Ta (°C) rf f Forward dynamic resistance rf (Ω) Forward dynamic resistance rf (Ω) 1 16 Frequency f (MHz) Forward dynamic resistance rf (Ω) 10 Reverse voltage VR (V) 10 2 20 V 50°C 25°C Forward voltage VF (V) 0 102 Reverse current IR (pA) 1 10−2 102 Reverse current IR (pA) Forward current IF (mA) 10 100 10 1 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30