PANASONIC MA3X075E

Band Switching Diodes
MA3X075E
Silicon epitaxial planar type
Unit : mm
+ 0.2
2.8 − 0.3
Rating
Unit
Reverse voltage (DC)
VR
35
V
Forward current (DC)
IF
100
mA
Topr
−25 to +85
°C
Tstg
−55 to +150
°C
Operating ambient
temperature*
Storage temperature
Note) * : Maximum ambient temperature during operation
1.45
0.95
3
+ 0.1
1.9 ± 0.2
0.95
1
+ 0.1
0.16 − 0.06
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Symbol
1.1
Parameter
0.65 ± 0.15
2
+ 0.2
− 0.1
■ Absolute Maximum Ratings Ta = 25°C
1.5
0.8
• Low forward dynamic resistance rf
• Less voltage dependence of diode capacitance CD
• Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
+ 0.2
■ Features
2.9 − 0.05
0.65 ± 0.15
0.4 − 0.05
For band switching
+ 0.25
− 0.05
1 : Anode 1
2 : Anode 2
JEDEC : TO-236
3 : Cathode 1, 2
EIAJ : SC-59A
Mini Type Package (3-pin)
Marking Symbol: M1Y
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 33 V
0.01
100
nA
Forward voltage (DC)
VF
IF = 100 mA
0.92
1
V
Diode capacitance
CD
VR = 6 V, f = 1 MHz
0.9
1.2
pF
IF = 2 mA, f = 100 MHz
0.65
0.85
Ω
Forward dynamic resistance*
rf
Note) 1．Each characteristic is a standard for individual diodes
2．Rated input/output frequency: 100 MHz
3. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1
MA3X075E
Band Switching Diodes
IF  V F
103
IR  T a
CD  VR
10
Ta = 25°C
102
f = 1 MHz
Ta = 25°C
VR = 33 V
10
1
Reverse current IR (nA)
Diode capacitance CD (pF)
Forward current IF (mA)
5
102
3
2
1
0.5
0.3
10
1
10−1
0.2
10−1
0.1
0
0.2
0.4
0.6
0.8
1.0
10−2
0
4
8 12 16 20 24 28 32 36 40
rf  IF
0.8
0.6
0.4
0.2
0
1
3
10
Forward current IF
2
rf  f
1.0
f = 100 MHz
Ta = 25°C
Forward dynamic resistance rf (Ω)
Forward dynamic resistance rf (Ω)
1.0
30
(mA)
100
IF = 2 mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
10
30
100
300
Frequency f (MHz)
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
Reverse voltage VR (V)
Forward voltage VF (V)
1 000