PANASONIC MA4X862

Band Switching Diodes
MA4X862
Silicon epitaxial planar type
Unit : mm
+ 0.2
2.8 − 0.3
+ 0.25
0.65 ± 0.15
+ 0.1
1.5 − 0.05
0.4 − 0.05
1.45
0.65 ± 0.15
0.5 R
35
V
IF
100
mA
75
mA/Unit
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−55 to +100
°C
(DC)
Double
0.5
0.95
0.4 − 0.05
+ 0.1
0.6 − 0
+ 0.1
0.16 − 0.06
VR
Single
2
0.2
Unit
Forward current
3
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Rating
Reverse voltage (DC)
1
0.8
Symbol
1.1 − 0.1
+ 0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
4
0.95
+ 0.2
2.9 − 0.05
• Two electrically isolated elements incorporated
• Small diode capacitance CD
• Low forward dynamic resistance rf
• Optimum for a band switching of a tuner
1.9 ± 0.2
■ Features
+ 0.1
For band switching
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1I
Internal Connection
4
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 33 V
100
nA
Forward voltage (DC)
VF
IF = 100 mA
1.0
V
Diode capacitance
CD
VR = 6 V, f = 1 MHz
1.2
pF
Forward dynamic resistance
rf1*1
IF = 2 mA, f = 100 MHz
0.65
Ω
0.98
Ω
rf2
*2
Note) 1．Rated input/output frequency: 100 MHz
2．*1 : rf measuring instrument: Nihon Koshuha Model TDC-121A
*2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
1
MA4X862
Band Switching Diodes
IF  VF (Between 1 − 4)
Forward current IF (mA)
Forward current IF (mA)
1
10−1
Ta = 85°C
10−2
1
30
4 3
10
IR  VR (Between 1 − 4)
IF  VF (Between 2 − 3)
100
1 2
− 20°C
100
2
4
3
10
Reverse current IR (pA)
102
Ta = 85°C
3
25°C
50°C
1
0.3
− 20°C
0.1
0.4
0.6
0.8
1.0
0.01
1.2
0.2
0.4
1
0.3
0.1
Forward dynamic resistance rf (Ω)
10
1
2
4
3
3
1
0.3
0.1
0.03
0
10
20
30
40
50
10
0.4
10
20
2
2
3
5
10
30
Forward current IF (mA)
100
50
60
20 30 50
8
IF = 2 mA
Ta = 25°C
rf Tester: TDC-121A
6
4
2
0
100
1
3
10
30
100
Frequency f (MHz)
CD  VR
1.6
f = 1 000 MHz
Ta = 25°C
rf Tester: YHP4191A
2.8
2.4
2.0
1.6
1.2
0.8
f = 1 MHz
Ta = 25°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.4
0
0.1
40
rf  f
4
1
30
Reverse voltage VR (V)
3.2
Forward dynamic resistance rf (Ω)
0.8
3
10
rf  IF
1.2
1
0
Frequency f (MHz)
f = 1 000 MHz
Ta = 25°C
rf Tester: TDC-121A
0.3
1.2
6
0
60
1.6
0
0.1
1.0
8
rf  IF
2.0
0.8
IF = 2 mA
Ta = 25°C
rf Tester: YHP4191A
Reverse voltage VR (V)
2.4
0.6
rf  f
12
Ta = 25°C
30
Reverse current IR (pA)
3
Forward voltage VF (V)
IR  VR (Between 2 − 3)
Forward dynamic resistance rf (Ω)
4 3
0.01
0
Forward dynamic resistance rf (Ω)
0.2
Diode capacitance CD (pF)
0
100
2
10
0.03
Forward voltage VF (V)
0.01
1 2
50°C 25°C
0.03
10−3
Ta = 25°C
30
0
0.3
1
3
10
30
Forward current IF (mA)
100
0
10
20
30
40
Reverse voltage VR (V)
50
Band Switching Diodes
MA4X862
IF(surge)  tW
Forward surge current IF(surge) (A)
1 000
Ta = 25°C
300
100
30
10
3
1
0.3
0.1
0.03
0.1
0.3
1
3
10
30
Pulse width tW (ms)
3