Schottky Barrier Diodes (SBD) MA2C700, MA2C700A Silicon epitaxial planar type Unit : mm For ordinary wave detection For super high speed switching φ 0.45 max. COLORED BAND INDICATES CATHODE 0.2 max. ■ Features • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR • DO-34(DHD) envelope, allowing to insert to a 5 mm pitch hole Reverse voltage (DC) MA2C700 Peak reverse voltage MA2C700 2 Symbol Rating Unit VR 15 V MA2C700A φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 30 VRM 15 MA2C700A 13 min. 0.2 max. 2.2 ± 0.3 1st Band 2nd Band ■ Absolute Maximum Ratings Ta = 25°C Parameter 13 min. 1 V 30 Peak forward current IFM 150 mA Forward current (DC) IF 30 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol MA2C700 Conditions IR MA2C700A Forward voltage (DC) Min Typ Max Unit VR = 15 V 100 nA VR = 30 V 150 VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA 1 V Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.3 pF Reverse recovery time* trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1 ns Detection efficiency η Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 60 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 ■ Cathode Indication Output Pulse Type No. MA2C700 MA2C700A t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Color 1st Band Silver Silver 2nd Band Green 1 MA2C700, MA2C700A Schottky Barrier Diodes (SBD) Common characteristics charts IF V F VF Ta 103 1.0 75°C 25°C Ta = 125°C 0.8 Forward voltage VF (V) Forward current IF (mA) 102 − 20°C 10 1 10−1 10−2 IF = 30 mA 0.6 10 mA 0.4 3 mA 0.2 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 0 −40 1.2 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of MA2C700 IR VR 105 Ct VR IR Ta 105 2.4 Ta = 125°C 103 75°C 102 25°C 10 1 0 5 10 15 20 25 2.0 1.6 1.2 0.8 103 102 10 0.4 0 30 VR = 15 V 3V 1V 104 Reverse current IR (nA) Reverse current IR (nA) 104 Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 0 Reverse voltage VR (V) 5 10 15 20 25 1 −40 30 Reverse voltage VR (V) 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of MA2C700A IR VR Ct VR 105 IR T a 105 2.4 f = 1 MHz Ta = 25°C 75°C 102 25°C 10 1 0 5 10 15 20 25 Reverse voltage VR (V) 2 30 2.0 1.6 1.2 0.8 103 102 10 0.4 0 VR = 30 V 3V 1V 104 Reverse current IR (nA) Reverse current IR (nA) 103 Terminal capacitance Ct (pF) Ta = 125°C 104 0 5 10 15 20 25 Reverse voltage VR (V) 30 1 −40 0 40 80 120 160 Ambient temperature Ta (°C) 200