TSTS7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 30° 94 8400 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION TSTS7500 is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with flat glass window. with APPLICATIONS • Radiation source in near infrared range PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 1.6 ± 30 950 800 TSTS7500 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 TSTS7500 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage SYMBOL VALUE UNIT VR 5 V Tcase ≤ 25 °C IF 250 mA Peak forward current tp/T = 0.5, tp ≤ 100 µs, Tcase ≤ 25 °C IFM 500 mA Surge forward current tp ≤ 100 µs IFSM 2.5 A PV 170 mW PV 500 mW Tj 100 °C Tstg - 55 to + 100 °C Forward current Power dissipation Tcase ≤ 25 °C Junction temperature Storage temperature range Thermal resistance junction/ambient leads not soldered RthJA 450 K/W Thermal resistance junction/case leads not soldered RthJC 150 K/W Note Tamb = 25 °C, unless otherwise specified www.vishay.com 268 For technical questions, contact: [email protected] Document Number: 81049 Rev. 1.8, 04-Sep-08 TSTS7500 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 300 R thJC 500 IF - Forward Current (mA) PV - Power Dissipation (mW) 600 400 300 200 R thJA 250 200 RthJC 150 RthJA 100 50 100 0 0 0 25 50 75 100 125 0 Tamb - Ambient Temperature (°C) 12790 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 100 80 Tamb - Ambient Temperature (°C) 94 8018 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp ≤ 20 ms VF 1.3 1.7 IF = 100 mA TKVF - 1.3 mV/K IR = 100 µA V(BR) VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF Forward voltage Temperature coefficient of VF Breakdown voltage Junction capacitance MIN. UNIT V 5 V Radiant intensity IF = 100 mA, tp = 20 ms Ie Radiant power IF = 100 mA, tp ≤ 20 ms φe 7 mW IF = 100 mA TKφe - 0.8 %/K ϕ ± 30 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm IF = 100 mA tr 800 ns IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs tr 400 ns d 0.5 mm Temperature coefficient of φe Angle of half intensity Rise time Virtual source diameter 1.25 1.6 8 mW/sr Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 I F - Forward Current (mA) IF - Forward Current (A) 10 1 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 10 3 10 2 10 1 10 0 0.5 10 -1 10 -2 94 8003 10 -1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration Document Number: 81049 Rev. 1.8, 04-Sep-08 94 7996 0 1 2 3 4 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage For technical questions, contact: [email protected] www.vishay.com 269 TSTS7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 1.6 1.1 1.2 IF = 10 mA Ie rel; Φe rel VF rel - Relative Forward Voltage (V) 1.2 1.0 0.9 0.8 0.4 0.8 0 - 10 0 10 0.7 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 7990 50 140 100 T amb - Ambient Temperature (°C) 94 7993 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature 1.25 Φe rel - Relative Radiant Power 100 I e - Radiant Intensity (mW/sr) IF = 20 mA 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 0.1 10 0 94 7926 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 6 - Radiant Intensity vs. Forward Current 1000 950 λ - Wavelength (nm) 94 7994 Fig. 9 - Relative Radiant Power vs. Wavelength 0° 10° 20° I e rel - Relative Radiant Intensity Φe - Radiant Power (mW) 1000 100 10 1 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 10 0 94 7977 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 7 - Radiant Power vs. Forward Current www.vishay.com 270 0.6 10 4 0.4 0.2 0 0.2 0.4 0.6 94 7978 Fig. 10 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] Document Number: 81049 Rev. 1.8, 04-Sep-08 TSTS7500 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs PACKAGE DIMENSIONS in millimeters A ± 0.15 C + 0.05 - 0.10 5.2 ± 0.25 Ø 4.7 Ø 5.5 2.54 nom. 13.2 ± 0.7 (2.5) Chip position Ø 0.45 + 0.02 - 0.05 Ø 3.9 Lens ± 0.05 technical drawings according to DIN specifications Drawing-No.: 6.503-5001.02-4 Issue: 1; 24.08.98 14485 Document Number: 81049 Rev. 1.8, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 271 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. 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