TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20° • Low forward voltage • Suitable for high pulse current operation 94 8636 • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION with APPLICATIONS The TSHA440. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) TSHA4400 20 ± 20 875 600 TSHA4401 30 ± 20 875 600 COMPONENT Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION PACKAGING REMARKS PACKAGE FORM TSHA4400 ORDERING CODE Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 TSHA4401 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 2 A PV 180 mW Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81017 Rev. 1.6, 16-Sep-08 For technical questions, contact: [email protected] www.vishay.com 147 TSHA4400, TSHA4401 Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Vishay Semiconductors 120 200 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 300 K/W 100 80 60 40 100 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 21311 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21312 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION Forward voltage Temperature coefficient of VF Reverse current SYMBOL MIN. TYP. MAX. UNIT V IF = 100 mA, tp = 20 ms VF 1.5 1.8 IF = 1.5 A, tp = 100 µs VF 3.2 4.9 IF = 100 mA TKVF - 1.6 V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 20 pF IF = 100 mA TKφe - 0.7 %/K ϕ ± 20 deg Peak wavelength IF = 100 mA λp 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 600 ns IF = 1.5 A tr 300 ns IF = 100 mA tf 600 ns IF = 1.5 A tf 300 ns d 1.8 mm Junction capacitance Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter 100 µA Note Tamb = 25 °C, unless otherwise specified TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 mA, tp = 100 µs Radiant power IF = 100 mA, tp = 20 ms PART SYMBOL MIN. TYP. MAX. UNIT TSHA4400 Ie 12 20 60 mW/sr TSHA4401 Ie 16 30 60 mW/sr TSHA4400 Ie 140 240 mW/sr TSHA4401 Ie 190 360 mW/sr TSHA4400 φe 20 mW TSHA4401 φe 24 mW Note Tamb = 25 °C, unless otherwise specified www.vishay.com 148 For technical questions, contact: [email protected] Document Number: 81017 Rev. 1.6, 16-Sep-08 TSHA4400, TSHA4401 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 Ie - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 1 t p /T = 0.01, I FM = 2 A 0.02 10 0 0.05 0.1 0.2 TSHA 4401 100 TSHA 4400 10 0.5 10 -1 10 -2 94 7947 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 10 0 Fig. 3 - Pulse Forward Current vs. Pulse Duration Φ e - Radiant Power (mW) IF - Forward Current (mA) 1000 tp = 100 µs tp/T= 0.001 10 3 10 2 100 10 1 0.1 0 1 2 3 4 V F - Forward Voltage (V) 94 8005 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7943 Fig. 4 - Forward Current vs. Forward Voltage 10 4 Fig. 7 - Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA I e rel; Φe rel VF rel - Relative Forward Voltage (V) 10 4 Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 1 10 1 10 2 10 3 I F - Forward Current (mA) 94 7942 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 20 40 60 80 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Document Number: 81017 Rev. 1.6, 16-Sep-08 0 - 10 0 10 100 94 8020 50 100 140 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 149 TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 1.25 Φe rel - Relative Radiant Power Φ e - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 0.75 0.5 0.25 IF = 100 mA 0 900 980 880 λ - Wavelenght (nm) 94 8000 1.0 Fig. 9 - Relative Radiant Power vs. Wavelength 1000 950 λ - Wavelength (nm) 94 7994 Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A 3.2 ± 0.15 C ± 0.3 5.8 Area not plane 2.9 ± 0.25 ± 0.5 30.3 < 0.6 ± 0.1 3.5 (2.5) ± 0.3 4.5 R 1.4 (sphere) 0.4 1.5 0.6 ± 0.1 + 0.15 - 0.05 ± 0.15 technical drawings according to DIN 2.54 nom. specifications Drawing-No.: 6.544-5264.01-4 Issue: 2; 23.04.98 95 10951 www.vishay.com 150 For technical questions, contact: [email protected] Document Number: 81017 Rev. 1.6, 16-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1