Multi Chip Transistor MMDT3904-HF (NPN+NPN) RoHS Device Halogen Free Features SOT-363 - Epitaxial planar die construction. - Ideal for low power amplification and switching. 0.087(2.20) 0.079(2.00) - Ultra small surface mount package. 6 5 4 1 2 3 0.053(1.35) 0.045(1.15) Mechanical data 0.055(1.40) 0.047(1.20) - Case: SOT-363 Standard package, molded plastic. 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) - Terminals: Solderable per MIL-STD-750, method 2026. 0.096(2.45) 0.085(2.15) - Mounting position: Any. 0.014(0.35) 0.006(0.15) - Weight: 0.0078 grams(approx.). 0.004(0.10)max 0.018(0.46) 0.010(0.26) Dimensions in inches and (millimeter) Diagram: - 1,4 : Emitter - 2,5 : Base - 3,6 : Collector C B E 6 5 4 1 2 3 E B C Maximum Ratings (at T =25°C unless otherwise noted) A Parameter Symbol Value Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current-continuous IC 0.2 A Collector power dissipation PC 0.2 W Junction temperature range TJ 150 °C Storage temperature range TSTG -55 to +150 °C Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR19 Page 1 Comchip Technology CO., LTD. Multi Chip Transistor Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Min Max Unit Collector-Base breakdown voltage IC=10μA , IE=0 V(BR)CBO 60 V Collector-Emitter breakdown voltage IC=1mA , IB=0 V(BR)CEO 40 V Emitter-Base breakdown voltage IE=10μA , IC=0 V(BR)EBO 5 V VCB=30V , IE=0 ICBO 0.05 µA VCE=30V , VBE(off)=3V ICEX 0.05 µA VEB=5V , IC=0 IEBO 0.05 µA VCE=1V , IC=0.1mA hFE(1) 40 VCE=1V , IC=1mA hFE(2) 70 VCE=1V , IC=10mA hFE(3) 100 VCE=1V , IC=50mA hFE(4) 60 VCE=1V , IC=100mA hFE(5) 30 Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage 300 IC=10mA , IB=1mA VCE(sat)1 0.2 V IC=50mA , IB=5mA VCE(sat)2 0.3 V IC=10mA , IB=1mA VBE(sat)1 0.85 V IC=50mA , IB=5mA VBE(sat)2 0.95 V 0.65 Base-emitter saturation voltage Transition frequency VCE=20V , IC=10mA, f=100MHz Collector output capacitance VCB=5V , IE=0, f=1MHz Cob 4 pF Noise figure VCE=5V , IC=0.1mA, f=1KHz , Rs=1KΩ NF 5 dB td 35 nS tr 35 nS ts 200 nS tf 50 nS Delay time Rise time Storage time Fall time VCC=3.0V , VBE(off)=-0.5V IC=10mA , IB1=-IB2=1mA VCC=3.0V , IC=10mA IB1=-IB2=1mA fT 300 MHz Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR19 Page 2 Comchip Technology CO., LTD. Multi Chip Transistor RATING AND CHARACTERISTIC CURVES (MMDT3904-HF) Fig.1 - Static Characteristic Fig.2 - hFE — IC 300 14 Ta=25°C 12 56uA 10 49uA 42uA 8 35uA 6 28uA 4 Ta=100°C 250 63uA DC Current Gain, hFE Collector Current, Ic (mA) VCE=1V COMMON -500uA EMITTER -450uA 70uA 21uA 14uA 200 150 Ta= 25°C 100 50 2 IB=7uA 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 Fig.3 - VBEsat — IC Fig.4 - VCEsat — IC 400 Collector-Emitter Saturation Voltage, ß=10 0.8 Ta= 25°C 0.6 VCEsat (mV) VBEsat, (V) Ta=100°C 0.4 ß=10 300 200 Ta=100°C 100 Ta= 25°C 0 0.2 0 10 1 100 200 10 1 Collector Current, Ic (mA) 100 200 Collector Current , Ic (mA) Fig.6 - PC — Ta Fig.5 - IC — VEB 200 250 Collector Power Dissipation, Pc (mW) 100 Collector Current, IC ( mA) 100 200 10 Collector Current , Ic (mA) 1.0 BASE-Emitter Saturation Voltage, 1 Collector-Emitter Voltage, VCE (V) Ta= 100°C 10 Ta= 25°C 1 200 150 100 50 VCE=1V 0.1 0.3 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25 Base-Emitter Voltage , VBE ( V ) 50 75 100 125 150 Ambient Temperature , Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR19 Page 3 Comchip Technology CO., LTD. Multi Chip Transistor Reel Taping Specification P1 W B F E d P0 C A P 12 o 0 D2 D1 D W1 SYMBOL SOT-363 SOT-363 A B C d D D1 D2 1.20 ± 0.10 1.50 + 0.10 - 0.00 178.00 ± 1.00 54.40 ± 0.40 13.00 ± 1.00 0.059 + 0.004 - 0.000 7.008 ± 0.039 2.142 ± 0.016 0.512 ± 0.039 (mm) 2.25 ± 0.10 (inch) 0.089 ± 0.004 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 - 0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 - 0.004 0.484 ± 0.039 2.55 ± 0.10 0.100 ± 0.004 0.047 ± 0.004 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR19 Page 4 Comchip Technology CO., LTD. Multi Chip Transistor Marking Code 6 Part Number Marking Code MMDT3904-HF . K6N . 5 4 K6N 1 2 3 Suggested PAD Layout C SOT-363 SIZE (mm) (inch) A 0.40 0.016 B 0.80 0.031 C 0.65 0.026 D 1.94 0.076 D B A Standard Packaging REEL PACK Case Type SOT-363 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR19 Page 5 Comchip Technology CO., LTD.