Small Signal Switching Diodes CDSH3-221-G Voltage: 20 Volts Current: 100 mA RoHS Device Features SOT-523 -Design for mounting on small surface. 0.067(1.70) 0.059(1.50) -High speed switching. 3 -High mounting capability, strong surge withstand, high reliability. 0.033(0.85) 0.030(0.75) 1 Mechanical data 2 0.043(1.10) 0.035(0.90) -Case: SOT-523, molded plastic. 0.008(0.20) 0.004(0.10) -Terminals: Solder plated, solderable per MIL-STD202E, method 208C. 0.069(1.75) 0.057(1.45) 0.031(0.80) 0.024(0.60) -Weight: 0.002 grams approx. Circuit Diagram 0.004(0.10)max. 0.012(0.30) 0.006(0.15) 0.004(0.10)min. 3 Dimensions in inches and (millimeter) 1 2 Maximum Ratings and Electrical Characteristics (at Ta=25°C unless otherwise noted) Value Unit VRRM 20 V Reverse voltage VR 20 V Average forward current IO 100 mA 300 mA 150 mW Parameter Peak repetitive reverse voltage Symbol Conditions Peak forward surge current IFSM Power dissipation PD Maximum forward voltage VF @IF=10mA 1.0 V Maximum reverse current IR @VR=15V 0.1 μA Maximum operating junction temperature TJ 150 O C TSTG -55 to +150 O C Storage temperature TP=1.0μS REV:A Page 1 QW-B0010 Comchip Technology CO., LTD. Small Signal Switching Diodes Rating and Characteristic Curves (CDSH3-221-G) Fig.1 - Forward Characteristics Fig.2 - Forward Characteristics 1000 1000 D1+D2 D2 0.1 0.01 0 0.4 0.8 1.6 1.2 2.0 0.2 0.6 1.4 1.0 VF, Forward Voltage (V) VF, Forward Voltage (V) Fig.3 - Capacitance Between Terminals Characteristics Fig.4 - Reverse Characteristics 10 100 D1 IR, Reverse Current (nA) CT, Capacitance Between Terminals (pF) -25 OC 1 75 O C 2C 5O -2 5 O C 0.01 10 25 O C C 75 O C O -2 5 OC 75 OC 0.1 25 OC 1 25 1 12 5 O C IF, Forward Current (mA) 10 100 125 O C ΙF, Peak Forward Current (mA) D1 100 D1 D2 1 D1+D2 125 OC 10 D2 D1 1 O 100 C D2 0.1 D1 D2 O 75 C f=1MHz O TJ=25 C 0.1 0.1 0.01 1.0 10 100 0 VR, Reverse Voltage (V) 5 10 20 30 VR, Reverse Voltage (V) REV:A Page 2 QW-B0010 Comchip Technology CO., LTD.