Comchip MOSFET SMD Diode Specialist CJ2301-HF P-Channel RoHS Device Halogen Free SOT-23 RDS(on)MAX V(BR)DSS 0.118(3.00) 0.110(2.80) ID D 112mΩ @ -4.5V -20V 0.055(1.40) 0.047(1.20) -2.3A 142mΩ @ -2.5V G S 0.079(2.00) 0.071(1.80) Features 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.035(0.90) 0.100(2.55) 0.089(2.25) - P-Channel 20-V(D-S) MOSFET - Trench FET Power MOSFET. - Load Switch for Portable Devices. - DC/DC Converter. 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) Mechanical data Circuit diagram - Case: SOT-23, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. - G : Gate - S : Source - D : Drain - Weight: 0.008 grams(approx.). D G S Maximum Ratings (at Ta=25 °C unless otherwise noted) Symbol Value Units Drain-source voltage VDS -20 V Gate-source voltage VGS ±8 V ID -2.3 IDM -10 Continuous source-drain diode current IS -0.72 Maximum power dissipation PD 400 mW RΘJA 312.5 °C/W Junction temperature range TJ 150 °C Storage temperature range TSTG -55 to +150 °C Parameter Continuous drain current Pulsed drain current Thermal resistance from junction to ambient (t<5s) A Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR12 Page 1 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions Min Typ Max Units Static Drain-source breakdown voltage V(BR) DSS VGS =0V , ID=-250µA -20 VGS(th) VDS =VGS , ID=-250µA -0.4 V Gate-source threshold voltage -1 Gate-source leakage IGSS VDS =0V , VGS=±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V , VGS=0V -1 µA Drain-source on-state resistance (Note a) Forward transconductance (Note a) VGS=-4.5V , ID=-2.8A 0.090 0.112 VGS=-2.5V , ID=-2.0A 0.110 0.142 RDS(on) gfs Ω VDS=-5V , ID=-2.8A 6.5 S Dynamic (Note b) Input capacitance ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg 405 VDS=-10V , VGS=0V, f=1MHZ 55 VDS=-10V , VGS=-4.5V,ID=-3A Gate-soutce charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time VDS=-10V , VGS=-2.5V,ID=-3A 5.5 10 3.3 6 nC 0.7 1.3 f=1MHz td(on) tr pF 75 VDD=-10V , 6.0 Ω 11 20 35 60 30 50 10 20 RL=10Ω , ID=-1A Turn-off delay time Fall time td(off) VGEN=-4.5V Rg=1Ω tf nS Drain-source body diode characteristics Continuous souce-drain diode current IS Pulse diode forward current (Note a) ISM Body diode voltage VSD -1.3 TC=25°C -10 IS=-0.7A -0.8 -1.2 A V Notes: a. Pulse test: Pulse width <300µs, Duty cycle < 2% b. Guaranteed by design, not subject to production testing. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR12 Page 2 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist RATING AND CHARACTERISTIC CURVES ( CJ2301-HF ) Fig.2 - Transfer Characteristics Fig.1 - Output Characteristics -10 -10 Ta=25°C VGS=-4.5V,-3.5V,-2.5V Ta=25°C Pulsed Pulsed -8 VGS=-2.0V Drain Current, ID (A) Drain Current, ID (A) -8 -6 -4 VGS=-1.5V -2 -6 -4 -2 VGS=-1.0V -0 -0 -0 -1 -3 -2 -0 -4 -0.5 -1.0 -1.5 -2.0 Gate to Source Voltage, VGS (V) Drain to Soruce Voltage, VDS (A) Fig.4 - RDS(ON) — VGS Fig.3 - RDS(ON) — ID 150 250 Ta=25°C Pulsed Ta=25°C ON-Resistance, RDS(ON) ( mΩ ) Pulsed ON-Resistance, RDS(ON) ( mΩ ) -2.5 120 VGS=-2.5V 90 VGS=-4.5V 60 30 0 200 150 100 ID=-2.8A 50 0 -2 -0 -4 -6 -8 -10 -0 Drain Current, ID (A) -2 -4 -6 -8 Gate to Source Voltage, VGS (V) Fig.5 - IS — VSD -10 Ta=25°C Source Current, Is ( A) Pulsed -1 -0.1 -0.01 -1E-3 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Source to Drain Voltage, VSD (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR12 Page 3 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Reel Taping Specification P1 F E d P0 B XX 12 o 0 D2 D1 D W1 Trailer Tape 50±2 Empty Pockets SOT-23 SOT-23 Leader Tape 100±2 Empty Pockets Components SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 / - 0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 / - 0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR12 Page 4 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Marking Code 3 Part Number Marking Code CJ2301-HF S1 XX 1 2 xx = Product type marking code Suggested PAD Layout B SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.60 0.024 C 1.90 0.075 D 2.02 0.080 E 2.82 0.111 A D E C Standard Packaging Case Type SOT-23 Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JTR12 Page 5 Comchip Technology CO., LTD.