Comchip MOSFET SMD Diode Specialist CJ3415-HF (P-Channel ) Reverse Voltage: - 20 Volts Forward Current: - 4 A RoHS Device Halogen Free V(BR)DSS RDS(ON)MAX ID SOT-23 50mΩ@-4.5V 60mΩ@-2.5V -20V -4A 73mΩ@-1.8V 0.118(3.00) 0.110(2.80) 3 Features 0.055(1.40) 0.047(1.20) - Extremely low RDS(ON) 1 - Low gate charge, low gate voltages 2 0.079(2.00) 0.071(1.80) Mechanical data 0.007(0.150) 0.002(0.080) 0.041(1.05) 0.035(0.90) - Case: SOT-23, molded plastic. 0.100(2.55) 0.089(2.25) - Terminals: Solderable per MIL-STD-750, method 2026. 0.020(0.50) 0.012(0.30) Circuit diagram 3 D 1. G : Gate 2. S : Source 3. D : Drain Dimensions in inches and (millimeter) 1 G S 2 Maximum Ratings (at Ta=25 °C unless otherwise noted) Symbol Value Unit Drain-source voltage VDS -20 V Gate-source voltage VGS ±8 V Continuous drain current (t<10s) ID -4.0 A Maximum power dissipation (t<10s) PD 0.35 W RΘJA 357 °C/W TJ -40 to +150 °C TSTG -55 to +150 °C Parameter Thermal resistance from junction to ambient Operating junction temperature range Storage temperature range Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR13 Page 1 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions Min Typ Max Units Static Parmeters Drain-source breakdown voltage V(BR) DSS VGS =0V , ID=-250µA -20 VGS(th) VDS =VGS , ID=-250µA -0.3 V Gate threshold voltage -1 VDS =0V , VGS=±8V Gate-body leakage current Zero gate voltage drain current Drain-source on-state resistance (note 1) ±10 IGSS IDSS RDS(on) VDS =0V , VGS=±4.5V ±1 VDS =-16V , VGS=0V -1 VGS=-4.5V , ID=-4A 0.050 VGS=-2.5V , ID=-4A 0.060 VGS=-1.8V , ID=-2A 0.073 Forward transconductance (note 2) gFS VDS=-5V , ID=-4A Body diode voltage (note 2) VSD IS=-1A , VGS=0V 8 µA Ω S -1 V Dynamic Parameters (note 3) Input capacitance ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg 1450 VDS=-10V , VGS=0V, f=1MHZ 205 pF 160 VDS=0V , VGS=0V, f=1MHZ 6.5 Ω Switching Characteristics Total gate charge Qg Gate-Soutce charge Qgs Gate-drain charge Qgd 4.5 td(on) 9.5 Turn-on delay time (note3) Turn-on rise time (note3) Turn-off delay time (note3) Turn-off fall time (note3) 17.2 tr td(off) VDS=-10V , VGS=-4.5V, ID=-4A 1.3 VDS=-10V , VGS=-4.5V 17 RGEN=3Ω, RL=2.5Ω 94 nC nS 35 tf Notes: 1. Repetitive rating, pulse width limited by junction temperature. 2. Pulse test: Pulse width ≦ 300µs, duty cycle ≦ 2% 3. These parameters have no way to verify Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR13 Page 2 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist TYPICAL CHARACTERISTIC Fig.2 - Transfer Characteristics Fig.1 - Output Characteristics 25 Ta=25℃ VGS=-4.5V 20 Pulsed 8 VGS=-2.5V Drain Current, ID (A) VGS=-2.0V 15 10 VGS=-1.5V 6 4 2 5 0 Ta=25℃ Pulsed VGS=-3.0V VGS=-8.0V Dran Current, ID (A) 10 0 1 3 2 0 5 4 0.0 Drain to Soruce Voltage, VDS (V) 0.5 1.0 1.5 2.0 Gate to Source Voltage, VGS (V) Fig.4- RDS(ON) — VGS Fig.3 - RDS(ON) — ID 80 60 Ta=25°C 70 ON-Resistance, RDS(ON) ( mΩ ) ON-Resistance, RDS(ON) ( mΩ ) Pulsed VGS=-1.8V 60 VGS=-2.5V 50 40 55 50 45 ID=-4A 40 35 VGS=-4.5V Ta=25°C Pulsed 30 30 2 3 4 5 6 7 8 9 10 0 Drain Current, ID (A) 2 4 6 8 10 Gate to Source Voltage, VGS (V) Fig.5 - IS — VSD 10 Source Current, Is ( A ) 1 0.1 0.01 1E-3 1E-4 Ta=25°C Pulsed 1E-5 0.0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR13 Page 3 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Reel Taping Specification P1 B F E d P0 W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 + 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR13 Page 4 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Marking Code 3 Part Number Marking Code CJ3415-HF R15 XXX 1 2 xxx = Product type marking code Solid dot = Halogen free parts Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Packaging Case Type SOT-23 Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR13 Page 5 Comchip Technology CO., LTD.