FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item Drain-Source Voltage Symbol Rating VDS 15 V Gate-Soutce Voltage VGS -5 V Total Power Dissipation PT 8.3 W Storage Temperature Tstg -55 to +150 ℃ Tch 150 ℃ Channel Temperature Unit Recommended Operating Condition (Case Temperature Tc=25℃) Item DC Input Voltage Symbol Condition VDS ≤ 10 Unit V Channel Temperature Tch ≤ 145 ℃ Forward Gate Current Igsf ≤ 9..6 mA Reverse Gate Current Igsr ≥-1.0 mA Gate Resistance Rg 200 Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Item Test Conditions Symbol Min. - Limit Typ. Max. Unit Drain Current IDSS VDS=5V, VGS=0V 600 900 Transconductance gm VDS=5V, IDS=400mA - 300 - mA mS Pinch-off Voltage Vp VDS=5V, IDS=30mA -1.0 -2.0 -3.5 V - - V Gate-Source Breakdown Voltage VGSO IGS=-30uA -5 Output Power at 1dB G.C.P. P1dB 31.5 32.5 - dBm Power Gain at 1dB G.C.P. G1dB VDS=10V, f=2.0GHz, IDS=0.6IDSS(Typ.) 11.5 12.5 - dB Rth Channel to Case - 12 15 ℃/W Thermal Resistance CASE STYLE: ZM G.C.P.:Gain Compression Point Note 1: Product supplied to this specification are 100% DC performance tested. Note 2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot. Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested. ESD Class Ⅱ 500 ～ 1999 V Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kΩ) Edition 1.1 May 2003 1 FLU17ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Output Power [dBm] 7 6 5 4 3 2 1 0 20 40 60 80 100 120 140 160 f = 2.0GHz, VDS = 10V, IDS = 0.6IDSS 36 34 32 30 28 26 24 22 20 18 16 80 60 40 P.A.E. 20 0 4 Case Temperature [℃] 6 8 10 12 14 16 18 20 22 24 Input Power [dBm] SMALL SINGLE R.L. vs FREQUENCY Wide Band Tuning (1.8GHz ～ 2.2GHz) 15 14 10 12 S21 5 0 10 8 S11 -5 -10 -15 -20 -25 6 4 S22 2 0 -2 S12 -30 -4 -35 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 Frequency [GHz] 2 100 Pout -6 3.2 Small Signal Gain [dB] 0 Small Signal R.L. & Isolation [dB] Total Power Dissipation [W] 9 Power Added Efficiency [%] OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER FLU17ZM L-Band Medium & High Power GaAs FET ■ S-PARAMETER +90 ° +50j +25j +100j 10 Ω 25 Ω 50 Ω +10j 1.0GH z +250j 3.0 2.0 100 Ω 3.0 2.0 ∞ 2.0 1.0G H z ±1 80° 1 0 6 3.0 Scale for |S 21| 1.0G H z -250j -10j -25j 0 .4 -100j -50j 0.6 -9 0° S 11 S 22 VDS = 10V, IDS = 360mA Freq [GHz] 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0° Scale fo r |S 12| 0 S11 MAG ANG 0.89 -130.40 0.87 -159.47 0.87 -172.30 0.87 176.73 0.85 166.01 0.84 153.61 0.85 142.11 0.87 131.82 0.89 124.40 0.90 118.39 S21 ANG MAG 7.82 106.20 4.26 84.91 2.95 71.11 2.31 58.41 1.89 45.71 1.58 31.88 1.33 18.68 1.12 5.71 0.94 -5.77 0.79 -16.59 3 S12 MAG 0.05 0.05 0.05 0.05 0.05 0.04 0.04 0.04 0.04 0.03 ANG 22.81 10.25 3.23 -2.81 -10.38 -11.34 -15.81 -20.61 -22.32 -26.62 S22 MAG ANG 0.38 -144.06 0.40 -157.62 0.41 -162.28 0.42 -166.91 0.43 -172.98 0.44 179.73 0.48 170.94 0.52 162.31 0.57 154.52 0.61 147.78 S 12 S 21 FLU17ZM L-Band Medium & High Power GaAs FET OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER @ VDS = 10V, IDS = 0.6IDSS 75 25 350 50 20 300 25 15 250 0 35 450 30 400 25 350 20 300 250 15 6 8 10 12 14 16 18 20 22 24 26 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] Pout Ids[mA] Input Power [dBm] P.A.E. Pout 400 25 350 20 300 15 250 75 50 25 0 In p u t Po w e r [d Bm ] 30 35 Power Added Efficiency[%] 450 Drain Current [mA] Output Power[dBm] 35 8 10 12 14 16 18 20 22 24 26 30 25 20 15 1.7 Ids[mA] 1.9 2.1 2.3 Fr e que ncy [GHz] Input Power [dBm] Pout P.A.E. OUTPUT POWER vs. FREQUENCY Pin-Pout @f = 2.2GHz 6 Ids[mA] P.A.E. Pin=10dBm Pin=15dBm Pin=20dBm Pin=25dBm Pin=28dBm P1dB 4 75 50 25 0 Power Added Efficiency[%] 400 Output Power [dBm] 30 Power Added Efficiency[%] Drain Current [mA] Output Power [dBm] Pin-Pout @f = 2.0GHz 450 Drain Current [mA] Pin-Pout @f = 1.8GHz 35 FLU17ZM L-Band Medium & High Power GaAs FET @ VDS = 10V, IDS = 0.6IDSS IMD vs OUTPUT POWER(2-tone) W-CDMA, 2-CARRIER IMD(ACLR) *fo=2.1325GHz *f1=2.1475GHz -20 -30 ACLR(IMD) [dBc] -25 -30 -40 -50 -60 -70 -80 15 20 25 30 -35 -40 -45 -50 -55 -60 35 18 19 20 21 22 23 24 25 26 27 28 2-tone total Pout [dBm] @∆f=+5MHz 2-tone total Pout [dBm] [email protected] [email protected] [email protected] [email protected] IM3L dBc IM5L dBc IM3-L IM3-U IM5-L IM5-U W-CDMA SINGLE CARRIER CCDF AND GAIN W-CDMA SINGLE CARRIER ACLR *fo=2.1325GHz *fo =2.1325GHz -25 15 -30 14 13 -35 CCDF,Gain [d B] ACLR [d Bc] IMD [dBc] 0 -10 -40 -45 -50 -55 12 11 10 9 8 7 6 -60 20 21 22 23 24 25 26 27 28 29 30 18 Ou tpu t Pow e r [d Bm ] -5M Hz -10M Hz 5 23 28 Ou tpu t Pow e r [d Bm ] +5M Hz +10M Hz 0.01% Pe ak Note : *All signals are W-CDMA modulated at 3GPP3.4.12-00 BS-1 64ch non clipping. 5 Gain FLU17ZM L-Band Medium & High Power GaAs FET ■ Recommended Bias Circuit and Internal Block Diagram <Board information> εr=3.5, t=0.8 * Board was tuned for wide band performance with data shown on pages 4 and 5. 6 FLU17ZM L-Band Medium & High Power GaAs FET ■ Package Outline 7 FLU17ZM L-Band Medium & High Power GaAs FET For further information please contact : FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. . . FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0202M200 8