Comchip MOSFET SMD Diode Specialist CJ2324-G (N-Channel MOSFET ) RoHS Device V(BR)DSS RDS(on)MAX ID SOT-23 234mΩ @ 10V 267mΩ @ 6V 100V 2A 0.118(3.00) 0.110(2.80) 278mΩ @ 4.5V 3 0.055(1.40) 0.047(1.20) Features 1 2 0.079(2.00) 0.071(1.80) - TrenchFET Power MOSFET - Low RDS(ON). - Surface mount package. 0.007(0.150) 0.002(0.080) 0.041(1.05) 0.035(0.90) Mechanical data 0.100(2.55) 0.089(2.25) - Case: SOT-23, molded plastic. 0.020(0.50) 0.012(0.30) Circuit diagram 3 1 D Dimensions in inches and (millimeter) 1. GATE 2. SOURCE 3. DRAIN G S 2 Absolute Maximum Ratings (at Ta=25 °C unless otherwise noted) Symbol Value Unit Drain-source voltage VDS 100 V Gate-source voltage VGS ±20 V Continuous drain current ID 2 A Pulsed drain current IDM* 8 A Power dissipation PD 350 mW RΘJA 357 °C/W Junction temperature TJ -40 to +150 °C Storage temperature TSTG -55 to +150 °C TL 260 °C Parameter Thermal resistance from junction to ambient Lead temperature for soldering purposes(1/8” form case for 10 s) * Repetitive rating: Pulse width limited by junction temperature. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR45 Page 1 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Typ Max Units Conditions Min V(BR) DSS VGS = 0V , ID = 250µA 100 Zero gate voltage drain current IDSS VDS = 100V , VGS = 0V 1 µA Gate-body leakage current IGSS VGS = ±20V, VDS = 0V ±100 nA VGS(th) VDS = VGS , ID = 250µA 2.8 V STATIC PARAMETERS Drain-source breakdown voltage Gate threshold voltage (note 1) Drain-source on-resistance (note 1) RDS(on) V 1.2 VGS = 10V , ID = 1.5A 234 VGS = 6V , ID = 1A 267 VGS = 4.5V , ID = 0.5A 278 Forward transconductance (note 1) gFS VDS = 20V , ID = 1.5A Diode forward voltage (note 1) VSD IS = 1.3A , VGS = 0V mΩ S 2 1.2 V DYNAMIC PARAMETERS (note2) Input capacitance ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg 190 VDS=50V , VGS=0V, f=1MHZ pF 22 13 F=1MHZ 0.3 2.8 Ω SWITCHING PARAMETERS (note2) Turn-on delay time Turn-on rise time Turn-off delay time td(on) tr td(off) 45 39 VDD=50V, VGEN=4.5V nS RL=39Ω , RG=1Ω, ID=1.3A 26 Turn-on fall time tf 20 Total gate charge Qg 5.8 Gate-source charge Qgs Gate-drain charge Qgd VDS=50V , VGS=4.5V ID=1.6A 0.75 nC 1.4 Note: 1. Pulse test : Pulse width≤300µs, duty cycle≤0.5% . 2. Guaranteed by design, not subject to production testing. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR45 Page 2 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist TYPICAL CHARACTERISTICS ( CJ2324-G ) Fig.2 - Transfer Characteristics Fig.1 - Output Characteristics 5.0 10 Pulsed 4.0 8 VGS=10V,12V VGS=8V 7 Drain Current, ID (A) Dran Current, ID (A) VDS = 3V Pulsed 4.5 9 VGS=3.8V 6 5 VGS=3.5V 4 3 3.5 3.0 2.5 Ta=100°C 2.0 1.5 1.0 2 VGS=3V 0.5 1 0 0 0 1 3 2 0 5 4 1 2 4 3 5 6 Gate to Source Voltage, VGS (V) Drain to Soruce Voltage, VDS (V) Fig.4 - RDS(ON) — VGS Fig.3 - RDS(ON) — ID 280 900 Ta=25°C Pulsed 800 260 ON-Resistance, RDS(ON) ( mΩ ) ON-Resistance, RDS(ON) ( mΩ ) Ta=25°C 240 VGS=4.5V 220 200 VGS=10V VGS=6V 700 600 ID=0.8A 500 Ta=100°C Pulsed 400 300 Ta=25°C Pulsed 200 180 100 160 1 0 2 3 4 0 5 0 Drain Current, ID (A) 6 4 2 8 10 Gate To Source Voltage, VGS (V) Fig.6 - Threshold Voltage Fig.5 - IS — VSD 6 2.1 2.0 Threshold Voltage, VTH ( V ) Source Current, Is ( A ) 1 Ta=100°C Pulsed 0.1 Ta=25°C Pulsed 0.01 1.9 1.8 ID=250uA 1.7 1.6 1.5 1E-3 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 Source to Drain Voltage, VSD (mV) 50 75 100 125 Junction Temperature, TJ (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR45 Page 3 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Reel Taping Specification P1 B F E d P0 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 + 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR45 Page 4 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Marking Code 3 Part Number Marking Code CJ2324-G S24 XXX 1 2 xxx = Product type marking code Suggested PAD Layout B SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.60 0.024 C 1.90 0.075 D 2.02 0.080 E 2.82 0.111 A D E C Standard Packaging Case Type SOT-23 Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR45 Page 5 Comchip Technology CO., LTD.