JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD MISWB3×2-8L Power Management MOSFETs-Schottky CJ5853DDC P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR MISWB3×2-8L ID/IO RDS(on)MAX 110mΩ@-4.5V -20V -2.7A 160mΩ@-2.5V 240mΩ@-1.8V 20V 1A / APPLICATIONS FEATURES z Independent Pinout to Each Device to Ease Circuit Design z Li-lon Battery Charging z Ultra low VF z High Side DC-DC Conversion Circuits z Including a CJ2301 MOSFET and a MBR0520 Schottky z High Side Drive for Small Brushless DC Motors z Power Management in Portable， (independently) in a package Battery Powered Products MARKING: APPLICATIONS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit P-MOSFET VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V Continuous Drain Current -2.7 A Pulse Drain Current -10 A Peak Repetitive Reverse Voltage 20 V VR DC Blocking Voltage 20 V IO Average Rectified Forward Current 1 A Power Dissipation 1.1 W Thermal Resistance from Junction to Ambient 114 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) 260 ℃ ID IDM* Schottky Barrier Diode VRRM Power Dissipation, Temperature and Thermal Resistance PD RθJA *Repetitive rating：Pluse width limited by junction temperature. www.cj-elec.com 1 G,May,2015 ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit P-MOSFET STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=-250µA Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±100 nA Gate threshold voltage Drain-source on-resistance(note1) VGS(th) RDS(on) VDS =VGS, ID =-250µA V -20 -0.45 V VGS =-4.5V, ID =-2.7A 110 mΩ VGS =-2.5V, ID =-2.2A 160 mΩ VGS =-1.8V, ID =-1A 240 mΩ -1.2 V 300 pF 150 pF Forward transconductance(note1) gFS VDS=-10V,ID=-2.7A Diode forward voltage(note1) VSD IS=-0.9A, VGS = 0V 7 S DYNAMIC PARAMETERS (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 50 pF td(on) 25 ns VGS=-4.5V,VDD=-10V, 45 ns RL=10Ω,RG=6Ω, ID=-1A 45 ns VDS =-10V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf 40 ns Total Gate Charge Qg 6.5 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =-10V,VGS =-4.5V, ID =-2.7A 1.4 nC 0.65 nC SCHOTTKY BARRIER DIODE Forward voltage VF IF=0.5A 0.48 V Reverse current IR VR=20V 100 µA Junction capacitance Cj VR=10V,f=1MHz 41 pF Note: 1.Pulse test: pulse width =300μs, duty cycle≤ 2% 2.These parameters have no way to verify. www.cj-elec.com 2 G,May,2015 7\SLFDO&KDUDFWHULVWLFV P-channel Characteristics Output Characteristics Transfer Characteristics -10 -10 VGS=-2.5V,-3.5V,-4.5V, Ta=25℃ Ta=25℃ Pulsed Pulsed -8 -8 (A) VGS=-1.5V ID -4 -6 DRAIN CURRENT ID -6 DRAIN CURRENT (A) VGS=-2.0V -4 -2 -2 VGS=-1.0V -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS -0 -0.0 -4 (V) -0.5 -1.0 ID —— -1.5 GATE TO SOURCE VOLTAGE RDS(ON) 150 —— -2.0 VGS -2.5 (V) VGS 250 Ta=25℃ Ta=25℃ Pulsed Pulsed 200 (mΩ) RDS(ON) VGS=-2.5V 90 ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 120 VGS=-4.5V 60 30 150 100 ID=-2.8A 50 0 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 -10 -0 (A) -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) VSD -10 Ta=25℃ Pulsed SOURCE CURRENT IS (A) -1 -0.1 -0.01 -1E-3 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com -1.0 VSD -1.2 (V) 3 G,May,2015 7\SLFDO&KDUDFWHULVWLFV Schottky Characteristics Foward Characteristics (uA) 100 T= a 2 5℃ REVERSE CURRENT IR 100 T= a 1 00 ℃ IF FORWARD CURRENT Reverse Characteristics 1000 (mA) 1000 10 1 0.0 Ta=100℃ 10 Ta=25℃ 1 0.1 0.4 0.2 FORWARD VOLTAGE 0.6 VF 0.8 0 (V) 5 10 15 REVERSE VOLTAGE 20 VR 25 30 (V) Capacitance Characteristics 120 Ta=25℃ CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 90 60 30 0 0 5 10 15 REVERSE VOLTAGE www.cj-elec.com 20 VR 25 30 (V) 4 G,May,2015 MISWB3X2-8L Package Outline Dimensions MISWB3X2-8L www.cj-elec.com 5 G,May,2015 MISWB3X2-8L Tape and Reel www.cj-elec.com 6 G,May,2015