SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) E C B DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) FMMT617 FMMT717 617 50mΩ at 3A FMMT618 FMMT718 618 50mΩ at 2A FMMT619 FMMT720 619 75mΩ at 2A FMMT624 FMMT723 624 - FMMT625 625 - ABSOLUTE MAXIMUM RATINGS. FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 PARAMETER SYMBOL Collector-Base Voltage VCBO 15 20 50 125 150 V Collector-Emitter Voltage VCEO 15 20 50 125 150 V Emitter-Base Voltage VEBO 5 5 5 5 5 V Peak Pulse Current** ICM 12 6 6 3 3 A Continuous Collector Current IC 3 2.5 2 1 1 A Base Current IB 500 mA Power Dissipation at Tamb=25°C* Ptot 625 mW -55 to +150 °C Operating and Storage Temperature Tj:Tstg Range UNIT * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices 3 - 149 FMMT624 FMMT625 FMMT619 TYPICAL CHARACTERISTICS 1 +25°C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC/IB=40 0.6 100m 100°C 0.4 25°C -55°C 10m IC/IB=100 0.2 IC/IB=50 IC/IB=10 1m 1m 10m 100m 1 0.0 10 10mA 1mA IC - Collector Current (A) 100°C 10A VCE(SAT) vs IC 1.2 VCE=2V IC/IB=40 25°C 0.8 0.8 225 -55°C 25°C 100°C 0.4 0.2 0.2 0.0 1mA 10mA 100mA 0 10A 1A 0.0 1mA 10mA Collector Current 100mA 1A 10A Collector Current HFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C 1.0 VCE =2V 0.8 0.6 0.4 Collector-Base Breakdown Voltage FMMT624 -55°C 1.0 100°C 0.1 MAX. MIN. V(BR)CBO 125 250 150 300 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 125 160 150 175 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 8.3 5 8.3 V IE=100µA Collector Cut-Off Current ICBO 100 100 nA nA VCB=100V VCB=130V Emitter Cut-Off Current IEBO 100 100 nA VEB=4V Collector Emitter Cut-Off Current ICES 100 100 nA nA VCES=100V VCES=130V Collector-Emitter Saturation Voltage VCE(SAT) IC=0.1A, IB=10mA* IC=0.1A, IB=1mA* IC=0.5A, IB=50mA* IC=0.5A, IB=10mA* IC=1A, IB=50mA* 26 50 70 160 165 150 220 250 10mA 100mA 1A 0.01 10A Collector Current 180 300 mV mV mV mV mV 1.0 0.85 1.0 V IC=1A, IB=50mA* Base-Emitter Turn-On Voltage VBE(ON) 0.7 1.0 0.74 1.0 V IC=1A, VCE=10V* Static Forward Current Transfer Ratio hFE 200 300 100 400 450 140 18 200 300 30 400 450 45 15 Transition Frequency fT 100 155 100 135 Output Capacitance COBO 7 Turn-On Time t(ON) 60 Turn-Off Time t(OFF) 1300 15 1 10 100 Safe Operating Area 3 - 154 50 200 0.85 VCE (VOLTS) VBE(ON) vs IC 26 110 VBE(SAT) 100ms 10ms 1ms 100µs 0.1 MAX. Base-Emitter Saturation Voltage 0.2 0.0 1mA TYP. UNIT CONDITIONS. TYP. IC=10mA, VCE=10V* IC=0.2A, VCE=10V* IC=1A, VCE=10V* IC=3A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz 160 ns 1500 ns VCC=50V, IC=0.5A IB1=-IB2=50mA 6 10 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% D.C. 1s 25°C FMMT625 MIN. -55°C 0.6 0.4 SYMBOL 1.0 450 1.0 0.6 1A Collector Current VCE(sat) v IC 1.2 100mA PARAMETER 3 - 155 FMMT624 FMMT625 TYPICAL CHARACTERISTICS IC/I B=20 25 °C 0.5 0.4 0.3 IC/IB =50 IC/IB =20 0.5 0.5 0.4 0.4 0.3 0.3 100°C IC/IB =10 0.2 0.2 0.1 0.1 0.0 0.0 1mA 10mA 100mA 1A 10A -55°C 1mA 1.0 0.8 100mA 1A -55°C 1.2 25°C 1.0 100°C 0.8 0.4 225 -55°C 100°C IC/IB=10 10mA 100mA 1A 10A 1mA 1.2 10mA 100mA 1A 0.0 10A 1mA 10mA 100mA 1A Collector Current hFE vs IC VBE(SAT) vs IC 10A 1A 10A 1A 10A 1.0 VCE=10V 100°C IC /IB =20 450 -55°C 0.8 25°C 25°C 0.6 225 100°C 0.4 0.2 0.0 1mA 10mA 100mA 0.0 1mA 10A 1A 10mA Collector Current 100mA Collector Current hFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C SINGLE PULSE TEST Tamb = 25 deg C 10 VCE =10V VCE =10V 1.0 1.0 0.8 -55°C 0.6 25°C 1.0 0.8 0.6 100°C 0.4 0.1 100ms 10ms 1ms 10mA 100mA 1A 10A Collector Current 0.01 1.0 D.C. 1s 100ms 10ms 100µs 10 100 Safe Operating Area 3 - 156 0.1 0.2 VCE (VOLTS) VBE(ON) vs IC 1.0 25°C 100°C 0.2 1mA -55°C 0.4 D.C. 1s 0.0 100mA VCE(SAT) vs IC 0.4 Collector Current 10mA Collector Current 0.2 0.0 0.0 1mA VCE(SAT) vs IC -55°C 0.2 -55°C Collector Current 0.6 0.2 25°C 0.2 0.1 0.0 1mA 10A 0.6 25°C 0.3 IC/IB=100 IC/IB=20 VCE =10V 0.6 0.4 10mA VCE(SAT) vs IC 450 0.4 0.1 VCE(SAT) vs IC 1.0 IC/IB=20 0.5 0.2 Collector Current 100°C 25 °C IC/IB=20 25°C Collector Current 1.2 0.8 TYPICAL CHARACTERISTICS 1000 0.0 1mA 10mA 100mA 1A 10A Collector Current 0.01 1ms 100µs 1 10 100 VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 157 1000 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158