General Purpose Transistor MMST2222A-G (NPN) RoHS Device Features -Power dissipation PCM : 0.2W (TA=25 OC) -Collector current ICM : 0.6A -Collector-base voltage V(BR)CBO : 75V -Operating and storage junction temperature range TJ, TSTG : -55 OC to +150 OC SOT-323 0.087 (2.20) 0.070 (1.8) 3 0.054 (1.35) 0.045 (1.15) 1 2 0.056 (1.40) 0.047 (1.20) Marking: K3P 0.006 (0.15) 0.002 (0.05) 0.087 (2.20) 0.078 (2.00) 0.044 (1.10) 0.035 (0.90) Collector 3 0.004 (0.10) max 0.016 (0.40) 0.008 (0.20) 1 Base 2 Emitter 0.004 (0.10) min Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Min Max Unit Collector-Base breakdown voltage IC =10μA , IE=0 V(BR)CBO 75 V Collector-Emitter breakdown voltage IC =10mA , IB=0 V(BR)CEO 40 V Emitter-Base breakdown voltage IE =10μA , IC=0 V(BR)EBO 6 V Collector cut-off current VCB=70V , IE=0 ICBO 0.1 µA Collector cut-off current VCE=35V , IB=0 ICEO 0.1 µA Emitter cut-off current VEB=3V , IC=0 IEBO 0.1 µA VCE=10V , IC=150mA hFE(1) 100 VCE=10V , IC=1mA hFE(2) 50 DC current gain 300 Collector-Emitter saturation voltage IC=500mA , IB=50mA VCE(sat) 0.6 V Base-Emitter saturation voltage IC=500mA , IB=50mA VBE(sat) 1.2 V Transition frequency VCE=20V , IC=20mA f=100MHZ fT Output capacitance VCB=10V , IE=0 f=1MHZ Delay time Rise time Storage time Fall time VCC=30V , IC=150mA VBE(off)=0.5V , IB1=15mA VCC=30V , IC=150mA IB1=IB2=15mA 300 MHZ Cob 8 pF td 10 nS tr 25 nS ts 225 nS tf 60 nS REV:A QW-BTR06 Page 1 General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMST2222A-G) Fig.1 Grounded Emitter Output Characteristics TA=25 OC 600 500 VCE(SAT), Collector-Emitter Saturation Voltage (V) IC, Collector Current (mA) 100 Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current 400 50 300 200 100 0.3 0.2 0.1 TA=25 OC IC/IB=10 IB=0μA 0 0 0 10 5 1 VCE, Collector-Emitter Voltage (V) 100 10 1000 IC, Collector Current (mA) Fig.4 DC Current Gain vs. Collector Current Fig.3 DC Current Gain vs. Collector Current 1000 1000 VCE=10V O hFE, DC Current Gain hFE, DC Current Gain TA=25 C VCE=10V 100 VCE=1V TA=125 OC O 25 C O -55 C 100 10 10 0.1 1.0 10 100 0.1 1000 1000 hFE, AC Current Gain TA=25 OC VCE=10V f=1KHz 100 10 1.0 10 10 100 1000 Fig.6 Base-Emitter Saturation Voltage vs. Collector Current 100 IC, Collector Current (mA) 1000 VBE(SAT), Base-Emitter Saturation Voltage (V) Fig.5 AC Current gain vs. Collector Current 0.1 1.0 IC, Collector Current (mA) IC, Collector Current (mA) 1.8 O TA=25 C IC/IB=10 1.6 1.2 0.8 0.4 0 1.0 10 100 1000 IC, Collector Current (mA) REV:A QW-BTR06 Page 2 General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMST2222A-G) Fig.8 Turn-on time vs. Collector Current 1000 1.8 O O TA=25 C IC/IB=10 TA=25 C VCE=10V 1.6 ton, Turn-on Time (nS) VBE(on), Base-Emitter Voltage (V) Fig.7 Grounded-Emitter Propagation Characteristics 1.2 0.8 0.4 100 VCC=30V VCC=10V 10 0 1.0 10 1000 100 1.0 100 10 Fig.10 Storage Time vs. Collector Current Fig.9 Rise Time vs. Collector Current 1000 500 O TA=25 C VCC=30V IC=10IB1=10IB2 ts, Storage Time (nS) tr, Rise Time (nS) TA=25 OC VCC=30V IC/IB=10 100 10 5 1.0 10 100 100 10 1.0 1000 10 100 Fig.11 Fall Time vs. Collector Current Fig.12 Input/Output Capacitance vs. Voltage 1000 100 TA=25 OC f=1MHz Capacitance (pF) TA=25 OC VCC=30V IC=10IB1=10IB2 100 10 1.0 10 100 IC, Collector Current (mA) 1000 IC, Collector Current (mA) IC, Collector Current (mA) tf, Fall Time (nS) 1000 IC, Collector Current (mA) IC, Collector Current (mA) 1000 Cib 10 1 0.1 Cob 1.0 10 100 Reverse Bias Voltage (V) REV:A QW-BTR06 Page 3 General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMST2222A-G) Fig.14 Gain Bandwidth product vs. Collector Current Fig.13 Gain Bandwidth Product 1000 TA=25 OC TA=25 OC VICE=10V 200MHz 250MHz Current Gain-Bandwidth Product (MHz) VCE, Collector-Emitter Voltage (V) 100 100MHz 10 300MHz 1.0 250MHz 0.1 1.0 100 10 10 100 IC, Collector Current (mA) 1000 1.0 10 100 1000 IC, Collector Current (mA) REV:A QW-BTR06 Page 4