MMST2222A-G

General Purpose Transistor
MMST2222A-G (NPN)
RoHS Device
Features
-Power dissipation
PCM : 0.2W (TA=25 OC)
-Collector current
ICM : 0.6A
-Collector-base voltage
V(BR)CBO : 75V
-Operating and storage junction temperature range
TJ, TSTG : -55 OC to +150 OC
SOT-323
0.087 (2.20)
0.070 (1.8)
3
0.054 (1.35)
0.045 (1.15)
1
2
0.056 (1.40)
0.047 (1.20)
Marking: K3P
0.006 (0.15)
0.002 (0.05)
0.087 (2.20)
0.078 (2.00)
0.044 (1.10)
0.035 (0.90)
Collector
3
0.004 (0.10) max
0.016 (0.40)
0.008 (0.20)
1
Base
2
Emitter
0.004 (0.10) min
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Max
Unit
Collector-Base breakdown voltage
IC =10μA , IE=0
V(BR)CBO
75
V
Collector-Emitter breakdown voltage
IC =10mA , IB=0
V(BR)CEO
40
V
Emitter-Base breakdown voltage
IE =10μA , IC=0
V(BR)EBO
6
V
Collector cut-off current
VCB=70V , IE=0
ICBO
0.1
µA
Collector cut-off current
VCE=35V , IB=0
ICEO
0.1
µA
Emitter cut-off current
VEB=3V , IC=0
IEBO
0.1
µA
VCE=10V , IC=150mA
hFE(1)
100
VCE=10V , IC=1mA
hFE(2)
50
DC current gain
300
Collector-Emitter saturation voltage
IC=500mA , IB=50mA
VCE(sat)
0.6
V
Base-Emitter saturation voltage
IC=500mA , IB=50mA
VBE(sat)
1.2
V
Transition frequency
VCE=20V , IC=20mA
f=100MHZ
fT
Output capacitance
VCB=10V , IE=0
f=1MHZ
Delay time
Rise time
Storage time
Fall time
VCC=30V , IC=150mA
VBE(off)=0.5V , IB1=15mA
VCC=30V , IC=150mA
IB1=IB2=15mA
300
MHZ
Cob
8
pF
td
10
nS
tr
25
nS
ts
225
nS
tf
60
nS
REV:A
QW-BTR06
Page 1
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMST2222A-G)
Fig.1 Grounded Emitter Output
Characteristics
TA=25 OC
600
500
VCE(SAT), Collector-Emitter
Saturation Voltage (V)
IC, Collector Current (mA)
100
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
400
50
300
200
100
0.3
0.2
0.1
TA=25 OC
IC/IB=10
IB=0μA
0
0
0
10
5
1
VCE, Collector-Emitter Voltage (V)
100
10
1000
IC, Collector Current (mA)
Fig.4 DC Current Gain vs.
Collector Current
Fig.3 DC Current Gain vs.
Collector Current
1000
1000
VCE=10V
O
hFE, DC Current Gain
hFE, DC Current Gain
TA=25 C
VCE=10V
100
VCE=1V
TA=125 OC
O
25 C
O
-55 C
100
10
10
0.1
1.0
10
100
0.1
1000
1000
hFE, AC Current Gain
TA=25 OC
VCE=10V
f=1KHz
100
10
1.0
10
10
100
1000
Fig.6 Base-Emitter Saturation Voltage vs.
Collector Current
100
IC, Collector Current (mA)
1000
VBE(SAT), Base-Emitter Saturation Voltage (V)
Fig.5 AC Current gain vs.
Collector Current
0.1
1.0
IC, Collector Current (mA)
IC, Collector Current (mA)
1.8
O
TA=25 C
IC/IB=10
1.6
1.2
0.8
0.4
0
1.0
10
100
1000
IC, Collector Current (mA)
REV:A
QW-BTR06
Page 2
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMST2222A-G)
Fig.8 Turn-on time vs. Collector Current
1000
1.8
O
O
TA=25 C
IC/IB=10
TA=25 C
VCE=10V
1.6
ton, Turn-on Time (nS)
VBE(on), Base-Emitter Voltage (V)
Fig.7 Grounded-Emitter Propagation
Characteristics
1.2
0.8
0.4
100
VCC=30V
VCC=10V
10
0
1.0
10
1000
100
1.0
100
10
Fig.10 Storage Time vs. Collector Current
Fig.9 Rise Time vs. Collector Current
1000
500
O
TA=25 C
VCC=30V
IC=10IB1=10IB2
ts, Storage Time (nS)
tr, Rise Time (nS)
TA=25 OC
VCC=30V
IC/IB=10
100
10
5
1.0
10
100
100
10
1.0
1000
10
100
Fig.11 Fall Time vs. Collector Current
Fig.12 Input/Output Capacitance vs. Voltage
1000
100
TA=25 OC
f=1MHz
Capacitance (pF)
TA=25 OC
VCC=30V
IC=10IB1=10IB2
100
10
1.0
10
100
IC, Collector Current (mA)
1000
IC, Collector Current (mA)
IC, Collector Current (mA)
tf, Fall Time (nS)
1000
IC, Collector Current (mA)
IC, Collector Current (mA)
1000
Cib
10
1
0.1
Cob
1.0
10
100
Reverse Bias Voltage (V)
REV:A
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Page 3
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMST2222A-G)
Fig.14 Gain Bandwidth product
vs. Collector Current
Fig.13 Gain Bandwidth Product
1000
TA=25 OC
TA=25 OC
VICE=10V
200MHz 250MHz
Current Gain-Bandwidth
Product (MHz)
VCE, Collector-Emitter Voltage (V)
100
100MHz
10
300MHz
1.0
250MHz
0.1
1.0
100
10
10
100
IC, Collector Current (mA)
1000
1.0
10
100
1000
IC, Collector Current (mA)
REV:A
QW-BTR06
Page 4