General Purpose Transistor SMD Diodes Specialist MMST2222A-G (NPN) RoHS Device Features -Power dissipation P CM : 0.2W (T A =25 OC) -Collector current I CM : 0.6A -Collector-base voltage V (BR)CBO : 75V -Operating and storage junction temperature range T J , T STG : -55 OC to +150 OC SOT-323 0.087 (2.20) 0.070 (1.8) 3 0.054 (1.35) 0.045 (1.15) 1 2 0.056 (1.40) 0.047 (1.20) 0.087 (2.20) 0.078 (2.00) 0.044 (1.10) 0.035 (0.90) Marking: K3P Collector 3 0.006 (0.15) 0.002 (0.05) 0.004 (0.10) max 0.016 (0.40) 0.008 (0.20) 1 Base 0.004 (0.10) min Dimensions in inches and (millimeter) 2 Emitter O Electrical Characteristics (at TA=25 C unless otherwise noted) Parameter Conditions Symbol Min Max Unit Collector-Base breakdown voltage I C =10μA , I E =0 V (BR)CBO 75 V Collector-Emitter breakdown voltage I C =10mA , I B =0 V (BR)CEO 40 V Emitter-Base breakdown voltage I E =10μA , I C =0 V (BR)EBO 6 V Collector cut-off current V CB =70V , I E =0 I CBO 0.1 µA Collector cut-off current V CE =35V , I B =0 I CEO 0.1 µA Emitter cut-off current V EB =3V , I C =0 I EBO 0.1 µA V CE =10V , I C =150mA h FE(1) 100 V CE =10V , I C =1mA h FE(2) 50 DC current gain 300 Collector-Emitter saturation voltage I C =500mA , I B =50mA V CE (sat) 0.6 V Base-Emitter saturation voltage I C =500mA , I B =50mA V BE (sat) 1.2 V Transition frequency V CE =20V , I C =20mA f=100MH Z fT Output capacitance V CB =10V , I E =0 f=1MH Z Delay time Rise time Storage time Fall time V CC =30V , I C =150mA V BE(off) =0.5V , I B1 =15mA V CC =30V , I C =150mA I B1 =I B2 =15mA 300 MH Z C ob 8 pF td 10 nS tr 25 nS ts 225 nS tf 60 nS REV:A QW-BTR06 Page 1 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMST2222A-G) Fig.1 Grounded Emitter Output Characteristics T A =25 OC 600 V CE(SAT), Collector-Emitter Saturation Voltage (V) I C, Collector Current (mA) 100 Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current 500 400 50 300 200 100 0.3 0.2 0.1 T A =25 OC I C /I B =10 I B =0μA 0 0 0 10 5 1 V CE , Collector-Emitter Voltage (V) 100 10 1000 I C , Collector Current (mA) Fig.4 DC Current Gain vs. Collector Current Fig.3 DC Current Gain vs. Collector Current 1000 1000 V CE =10V O h FE, DC Current Gain h FE, DC Current Gain T A =25 C V CE =10V 100 V CE =1V T A =125 OC O 25 C O -55 C 100 10 10 0.1 1.0 10 100 0.1 1000 h FE, AC Current Gain 1000 T A =25 OC V CE =10V f=1KHz 100 10 1.0 10 100 I C , Collector Current (mA) 1000 V BE(SAT), Base-Emitter Saturation Voltage (V) Fig.5 AC Current gain vs. Collector Current 0.1 1.0 10 100 1000 I C , Collector Current (mA) I C , Collector Current (mA) Fig.6 Base-Emitter Saturation Voltage vs. Collector Current 1.8 O T A =25 C I C /I B =10 1.6 1.2 0.8 0.4 0 1.0 10 100 1000 I C , Collector Current (mA) REV:A QW-BTR06 Page 2 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMST2222A-G) Fig.8 Turn-on time vs. Collector Current 1000 1.8 O O T A =25 C V CE =10V 1.6 1.2 0.8 0.4 t on, Turn-on Time (nS) V BE(on), Base-Emitter Voltage (V) Fig.7 Grounded-Emitter Propagation Characteristics T A =25 C I C /I B =10 100 V CC =30V V CC =10V 10 0 1.0 10 1000 100 1.0 1000 Fig.10 Storage Time vs. Collector Current Fig.9 Rise Time vs. Collector Current 1000 500 O t s, Storage Time (nS) T A =25 OC V CC =30V I C /I B =10 t r, Rise Time (nS) 100 10 I C , Collector Current (mA) I C , Collector Current (mA) 100 10 5 1.0 10 100 T A =25 C V CC =30V I C =10I B1 =10I B2 100 10 1.0 1000 10 100 Fig.11 Fall Time vs. Collector Current Fig.12 Input/Output Capacitance vs. Voltage 1000 100 T A =25 OC f=1MHz Capacitance (pF) t f, Fall Time (nS) T A =25 OC V CC =30V I C =10I B1 =10I B2 100 10 1.0 10 100 I C , Collector Current (mA) 1000 I C , Collector Current (mA) I C , Collector Current (mA) 1000 Cib 10 1 0.1 Cob 1.0 10 100 Reverse Bias Voltage (V) REV:A QW-BTR06 Page 3 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMST2222A-G) Fig.14 Gain Bandwidth product vs. Collector Current 100 1000 T A =25 OC 200MHz 250MHz Current Gain-Bandwidth Product (MHz) V CE, Collector-Emitter Voltage (V) Fig.13 Gain Bandwidth Product 100MHz 10 300MHz 1.0 250MHz 0.1 1.0 T A =25 OC VI CE =10V 100 10 10 100 I C , Collector Current (mA) 1000 1.0 10 100 1000 I C , Collector Current (mA) REV:A QW-BTR06 Page 4