UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A / PN2907A !External dimensions (Units : mm) UMT2907A 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 (3) !Package, marking and packaging specifications Part No. 2.1±0.1 0~0.1 0.3+0.1 −0 All terminals have same dimensions ROHM : UMT3 EIAJ : SC-70 0.7±0.1 (2) 1.25±0.1 (1) 0.1~0.4 !Features 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A / PN2222A. 0.15±0.05 (1) Emitter (2) Base (3) Collector UMT2907A SST2907A MMST2907A PN2907A Code Basic ordering unit (pieces) UMT3 R2F T106 SST3 R2F T116 TO-92 T93 SMT3 R2F T146 SST2907A 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 3000 3000 3000 3000 (2) (1) 1.3+0.2 −0.1 Marking 0~0.1 2.4±0.2 Packaging type 0.2Min. (3) All terminals have same dimensions +0.1 0.15 −0.06 0.4 +0.1 −0.05 !Absolute maximum ratings (Ta=25°C) Limits Unit VCBO VCEO -60 -60 V V VEBO IC -5 -0.6 V A 0.2 0.8±0.1 (2) 1.6+0.2 −0.1 PC 1.1+0.2 −0.1 1.9±0.2 W 0~0.1 All terminals have same dimensions ˚C ˚C 0.4 +0.1 −0.05 ROHM : SMT3 EIAJ : SC-59 PN2907A 4.8±0.2 +0.1 0.15 −0.06 (1) Emitter (2) Base (3) Collector 3.7±0.2 2.5Min. 0.625 150 -55~+150 0.3~0.6 (3) Tj Tstg 4.8±0.2 Storage temperature 2.9±0.2 0.95 0.95 (1) PN2907A Junction temperature MMST2907A 2.8±0.2 Symbol (12.7Min.) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMT2907A, Collector power SST2907A, dissipation MMST2907A (1) Emitter (2) Base (3) Collector ROHM : SST3 0.5±0.1 (1) (2) 5 ROHM : TO-92 EIAJ : SC-43 (3) 2.5 +0.3 −0.1 0.45±0.1 2.3 (1) Emitter (2) Base (3) Collector UMT2907A / SST2907A / MMST2907A / PN2907A Transistors !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO −60 −60 − − − − V V IC=10µA IC=10mA Emitter-base breakdown voltage BVEBO −5 − − V IE=10µA ICBO − − −100 ICES − − −100 IEBO − − − −100 − −0.4 − − −1.6 0.6 − −1.3 Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) nA nA V V Conditions VCB=−50V VCB=−30V VEB=−3V IC/IB=−150mA/−15mA IC/IB=−500mA/−50mA IC/IB=−150mA/−15mA − − −2.6 75 − − 100 − − hFE 100 − − − 300 fT 100 50 200 − − − − Collector output capacitance Cob − − 8 pF VCE=−10V, IC=−500mA VCE=−20V, IC=−50mA, f=100MHz VCB=−10V, f=100kHz Emitter input capacitance Cib − − 30 pF VEB=−2V, f=100kHz Turn-on time ton − − 50 ns VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA Delay time td − − 10 ns VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA Rise time tr − − 40 ns VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA Turn-off time toff − − 100 ns VCC=−30V, IC=−150mA, IB1=IB2=−15mA Storage time tstg − − 80 30 ns ns VCC=−30V , IC=−150mA, IB1=IB2=−15mA tf − − DC current transfer ratio Transition frequency Fall time IC/IB=−500mA/−50mA VCE=−10V, IC=−0.1mA VCE=−10V, IC=−1mA − VCE=−10V, IC=−10mA VCE=−10V, IC=−150mA MHz VCC=−30V, IC=−150mA, IB1=IB2=−15mA 100 COLLECTOR CURRENT : IC (mA) Ta=25˚C 600 500 400 50 300 200 100 1B=0µA 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE (V) BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) !Electrical characteristic curves 1.8 Ta=25˚C IC / IB=10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Fig.1 Grounded emitter output characteristics 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.2 Base-emitter saturation voltage vs. collector current 1000 DC CURRENT GAIN : hFE Ta=25˚C VCE=10V 100 10 0.1 1V 1.0 10 COLLECTOR CURRENT : IC (mA) 100 Fig.3 DC current gain vs. collector current ( I ) 1000 UMT2907A / SST2907A / MMST2907A / PN2907A Transistors 1000 DC CURRENT GAIN : hFE VCE=10V Ta=125˚C Ta=25˚C 100 Ta=−55˚C 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) 1000 AC CURRENT GAIN : hFE COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) Ta=25˚C VCE=10V f=1kHz 100 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 Ta=25˚C IC / IB=10 0.3 0.2 0.1 0 1.0 1000 Fig.6 Collector-emitter saturation voltage vs. collector current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 100 1000 Ta=25˚C VCE=10V 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics Ta=25˚C VCE=10V 100 10 1 10 100 COLLECTOR CURRENT : IC (mA) Fig.8 Gain bandwidth product vs. collector current 1000 COLLECTOR-EMITTER VOLTAGE : VCE(V) 1.6 CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) BASE-EMITTER ON VOLTAGE : VBE(on) (V) Fig.5 AC current gain vs. collector current 1.8 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25˚C 100MHz 300MHz 200MHz 10 250MHz 1 200MHz 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.9 Gain bandwidth product UMT2907A / SST2907A / MMST2907A / PN2907A Transistors Cib Cob 10 1000 Ta=25˚C IC / IB=10 500 Ta=25˚C VCC=30V IC / IB=10 RISE TIME : tr (ns) Ta=25˚C f=1MHz TURN ON TIME : ton (ns) CAPACITANCE (pF) 100 100 VCC=30V 100 10V 10 1 0.1 10 1 10 REVERSE BIAS VOLTAGE (V) 100 1 Fig.11 Turn-on time vs.collector current Fig.10 Input/output capacitance vs. voltage 1000 100 10 1000 Ta=25˚C VCC=30V IC=10IB1=10IB2 FALL TIME : tf (ns) STORAGE TIME : ts (ns) Ta=25˚C VCC=30V IC=10IB1=10IB2 10 100 1000 COLLECTOR CURRENT : IC (mA) 100 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.13 Storage time vs. collector current 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.14 Fall time vs. collector current 5 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.12 Rise time vs. collector current