General Purpose Transistor SS8050-G (NPN) RoHS Device Diagram: SOT-23 Collector 3 1 : BASE 2 : EMITTER 3 : COLLECTOR 0.118(3.00) 0.110(2.80) 1 Base 3 0.055(1.40) 0.047(1.20) 2 Emitter 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) Maximum Ratings (at T =25°C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 25 V Emitter-Base voltage VEBO 5 V Collector current IC 1.5 A Collector power dissipation PC 300 mW RθJA 417 °C/W Thermal resistance from junction to ambient Junction temperature TJ 150 °C Storage temperature Tstg -55~+150 °C 0.041(1.05) 0.035(0.90) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base breakdown voltage IC =100μA , IE=0 V(BR)CBO 40 - - V Collector-Emitter breakdown voltage IC =0.1mA , IB=0 V(BR)CEO 25 - - V Emitter-Base breakdown voltage IE =100μA , IC=0 V(BR)EBO 5 - - V Collector cut-off current VCB=40V , IE=0 ICBO - - 0.1 µA Collector cut-off current VCE=20V , IE=0 ICEO - - 0.1 µA Emitter cut-off current VEB=5V , IC=0 IEBO - - 0.1 µA VCE=1V , IC=100mA hFE(1) 200 - 350 VCE=1V , IC=800mA hFE(2) 40 - - Collector-Emitter saturation voltage IC=800mA , IB=80mA VCE(sat) - - 0.5 V Base-Emitter saturation voltage IC=800mA , IB=80mA VBE(sat) - - 1.2 V Transition frequency VCE=10V, IC=50mA, f=30MHz fT 100 - - MHZ DC current gain Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 1 QW-BTR56 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (SS8050-G) Fig.2 - hFE — IC Fig.1 - Static Characteristic 140 1000 COMMON EMITTER Ta=25°C 500μA 450μA Ta=100°C DC Current Gain, hFE Collector Current, IC (mA) 120 COMMON EMITTER VCE=1V 400μA 100 350μA 80 300μA 250μA 60 200μA 40 150μA Ta=25°C 100 100μA 20 IB=50μA 0 10 0 0.5 1.0 1.5 2.0 2.5 1000 1500 100 10 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Fig.3 - VCEsat — IC Fig.4 - VBEsat — IC 1000 1.2 100 Base-Emitter Saturation Voltage, VBEsat (V) Collector-Emitter Saturation Voltage, VCEsat (mV) 1 Ta=100°C Ta= 25°C 10 1.0 0.8 Ta= 25°C 0.6 Ta=100°C 0.4 β = 10 β = 10 0.2 1 10 1 100 10001500 1 10 100 Collector Current, Ic (mA) Fig.5 - VBE — IC Fig.6 - Cob/Cib — VCB/VEB 1500 1000 200 100 Cib Capacitance, C (pF) Collector Current, Ic (mA) 1000 1500 Collector Current, Ic (mA) Ta=100°C 100 Ta= 25°C 10 f=1MHZ IE=0/IC=0 Ta=25°C Cob 10 COMMON EMITTER VCE=1V 1 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 Base - Emitter Voltage, VBE (V) 1 10 20 Reverse Voltge, (V) Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 2 QW-BTR56 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (SS8050-G) Fig.7 - FT — IC Fig.8 - PC — Ta 350 Collector Power Dissipation, Pc (mW) Transtion frequency, fT (MHZ) 1000 100 10 VCE=10V Ta= 25°C 1 300 250 200 150 100 50 0 1 10 100 0 Collector Current, IC (mA) 25 50 75 100 125 150 Ambient Temperature, Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 3 QW-BTR56 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification P1 d T W B F E P0 C A P 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.087 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 4 QW-BTR56 Comchip Technology CO., LTD. General Purpose Transistor Marking Code 3 Part Number Marking Code SS8050-G Y1 XX 1 2 xx = Product type marking code Suggested PAD Layout B SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.60 0.024 C 1.90 0.075 D 2.02 0.080 A D C Note: 1.General tolerance: ±0.05mm. 2.The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 5 QW-BTR56 Comchip Technology CO., LTD.