SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 1.5 A Total Device Dissipation TA=25°C PD 1.0 W TJ,Tstg -55 to +150 °C Junction and Storage, Temperature ELECTRICAL CHARACTERISTICS (TA=25˚C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=100µA, IE=0 V(BR)CBO 40 - - V Collector-Emitter Breakdown Voltage IC=0.1mA, IB=0 V(BR)CEO 25 - - V Emitter Base Breakdown Voltage IE=100µA, IC=0 V(BR)EBO 5 - - V Collector cut-off current VCB=40V, IE=0 ICBO - - 0.1 µA Emitter cut-off current VCE=20V, IE=0 ICEO - - 0.1 µA Emitter cut-off current VEB=5V, IC=0 IEBO - - 0.1 µA WEITRON http://www.weitron.com.tw 1/4 28-Nov-2013 SS8050 ON CHARACTERISTICS DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=800 mA hFE(1) hFE(2) 85 40 - 400 - - Collector-Emitter Saturation Voltage IC=800mA, IB=80mA VCE(sat) - - 0.5 V Base-Emitter Saturation Voltage IC=800mA, IB=80mA VBE(sat) - - 1.2 V Base-Emitter ON Voltage VCE=1V, IC=10mA) VBE(ON) - - 1 V 100 - DYNAMIC CHARACTERISTICS Transition frequency VCE=10 V, IC=50 mA, f=30MHz fT - MHz CLASSIFICATION OF hFE(1) Rank B C D E Range 85-160 120-200 160-300 300-400 WEITRON http://www.weitron.com.tw 2/4 28-Nov-2013 SS8050 hFE Static Characteristic 140 1000 Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 450uA 400uA 100 350uA 80 300uA 250uA 60 200uA 40 IC COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 500uA 120 —— 150uA 300 Ta=25℃ 100 30 100uA 20 IB=50uA 0 0.0 10 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCEsat VCE 2.5 1 VBEsat IC —— 100 30 COLLECTOR CURRENT 1000 1000 1500 300 IC (mA) IC —— 1.2 300 100 Ta=100℃ 30 1.0 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 10 3 (V) Ta=25℃ 10 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 3 β=10 β=10 1 0.2 1 10 3 100 30 COLLECTOR CURRENT VBE 300 IC 1000 1500 1 (mA) 100 COLLECTOR CURRENT IC —— 30 10 3 Cob/ Cib 1000 1500 300 (mA) IC VCB/ VEB —— 1000 1500 1000 f=1MHz IE=0/IC=0 Ta=100℃ 100 Ta=25℃ 10 100 Cib Cob 10 COMMON EMITTER VCE=1V 1 0.2 0.4 0.6 0.8 BASE-EMMITER VOLTAGE fT —— 1.0 VBE 1 0.1 1.2 3 1 0.3 (V) REVERSE VOLTAGE IC PC 1200 COLLECTOR POWER DISSIPATION PC (mW) 1000 TRANSITION FREQUENCY fT (MHz) CAPACITANCE C (pF) COLLCETOR CURRENT IC (mA) Ta=25℃ —— V 10 20 (V) Ta 1000 300 100 30 10 3 800 600 400 200 VCE=10V Ta=25℃ 1 0 2 10 COLLECTOR CURRENT WEITRON http://www.weitron.com.tw 100 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 3/4 100 Ta 125 150 (℃) 28-Nov-2013 SS8050 TO-92 Outline Dimensions unit:mm E TO-92 H Dim A B C D E G H J K L L C J K D A B G Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 WEITRON http://www.weitron.com.tw 4/4 28-Nov-2013