LF PA K PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 100 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 179 W Tj junction temperature -55 - 175 °C VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 - 1.65 2.05 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 - 1.3 [1] Static characteristics RDSon drain-source on-state resistance 1.55 mΩ PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - 8.6 - nC QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - 30 - nC [1] Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 4 SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Type number PSMN1R5-30YLC Package Name Description Version LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 4. Marking Table 4. Marking codes Type number Marking code[1] PSMN1R5-30YLC 1C530L [1] % = placeholder for manufacturing site code PSMN1R5-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 30 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage ID drain current -20 20 V VGS = 10 V; Tmb = 25 °C; see Figure 1 [1] - 100 A VGS = 10 V; Tmb = 100 °C; see Figure 1 [1] - 100 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 - 1008 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 179 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature VESD electrostatic discharge voltage MM (JEDEC JESD22-A115) - 260 °C 1000 - V - 100 A Source-drain diode [1] IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1008 A VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped; see Figure 3 - 147 mJ Avalanche ruggedness EDS(AL)S [1] non-repetitive drain-source avalanche energy Continuous current is limited by package. 003a a f644 300 03na19 120 ID (A) Pder (%) 240 80 180 120 (1) 40 60 0 0 0 Fig 1. 50 100 150 Continuous drain current as a function of mounting base temperature PSMN1R5-30YLC Product data sheet 0 200 Tmb (°C) 50 100 150 200 Tmb (°C) Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 003a a f 658 103 I AL (A) (1) 102 (2) 10 1 10-1 10-3 Fig 3. 10-2 10-1 1 tAL (ms ) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time 003aaf645 104 ID (A) 103 Limit RDSon = VDS / ID tp =10 μ s 102 100 μ s 1 ms 10 DC 10 ms 100 ms 1 10-1 10-1 Fig 4. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN1R5-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - 0.71 0.84 K/W 003a a f 646 1 Zth(j-mb) (K/W) d = 0.5 0.2 10-1 0.1 0.05 0.02 δ= P 10-2 s ingle s hot tp T t tp T 10-3 10-6 Fig 5. 10-5 10-4 10-3 10-2 10-1 tp (s ) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN1R5-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit - - V Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10; see Figure 11 1.05 1.51 1.95 V ID = 10 mA; VDS = VGS; Tj = 150 °C 0.5 - - V IDSS drain leakage current ID = 1 mA; VDS = VGS; Tj = -55 °C - - 2.25 V VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 100 µA IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 - 1.65 2.05 mΩ VGS = 4.5 V; ID = 25 A; Tj = 150 °C; see Figure 12; see Figure 13 - - 3.4 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 - 1.3 1.55 mΩ VGS = 10 V; ID = 25 A; Tj = 150 °C; see Figure 12; see Figure 13 - - 2.6 mΩ f = 1 MHz - 1.05 2.1 Ω ID = 25 A; VDS = 15 V; VGS = 10 V; see Figure 14; see Figure 15 - 65 - nC ID = 25 A; VDS = 15 V; VGS = 4.5 V; see Figure 14; see Figure 15 - 30 - nC ID = 0 A; VDS = 0 V; VGS = 10 V - 53 - nC ID = 25 A; VDS = 15 V; VGS = 4.5 V; see Figure 14; see Figure 15 - 9.7 - nC - 6.6 - nC RG gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gate-source charge QGS(th-pl) post-threshold gate-source charge - 3.1 - nC QGD gate-drain charge - 8.6 - nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - 2.53 - V Ciss input capacitance Coss output capacitance VDS = 15 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 Crss reverse transfer capacitance td(on) turn-on delay time VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V; RG(ext) = 4.7 Ω - 4044 - pF - 860 - pF - 287 - pF - 33 - ns tr rise time - 62 - ns td(off) turn-off delay time - 62 - ns tf fall time - 38 - ns PSMN1R5-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Qoss output charge VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C - 23 - nC Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 - 0.8 1.1 V trr reverse recovery time - 41 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 15 V - 43 - nC ta reverse recovery rise time tb reverse recovery fall time VGS = 0 V; IS = 25 A; dIS/dt = -100 A/µs; VDS = 15 V; see Figure 18 003a a f 647 100 3.0 ID (A) 24 - ns 17 - ns 003a a f 648 10 2.8 RDS on (mΩ) 2.6 4.5 80 - 8 10 6 60 2.4 4 40 2 20 VGS (V) = 2.2 0 0 0 Fig 6. 0.5 1 1.5 VDS (V) 0 2 Output characteristics; drain current as a function of drain-source voltage; typical values PSMN1R5-30YLC Product data sheet Fig 7. 4 8 12 VGS (V) 16 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 003a a f 653 240 003a a f 655 100 ID (A) gfs (S ) 80 180 60 120 40 Tj = 150 °C 60 Tj = 25 °C 20 0 0 0 Fig 8. 25 50 75 I D (A) 100 Forward transconductance as a function of drain current; typical values 003a a f 652 10-1 0 Fig 9. 1 2 3 VGS (th) (V) 10-2 4 Transfer characteristics; drain-source current as a function of gate-source voltage; typical values 003a a f 651 3 ID (A) VGS (V) Max (1mA) I D = 5mA Min Typ 2 Max 1mA 10-3 10-4 1 Min (5mA) 10-5 10-6 0 1 2 VGS (V) 0 -60 3 Fig 10. Sub-threshold drain current as a function of gate-source voltage PSMN1R5-30YLC Product data sheet 0 60 120 Tj (°C) 180 Fig 11. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 8 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 003a a f 649 8 003a a f 650 2 2.6 RDS on (mΩ) a 10V VGS (V) = 2.8 6 1.5 VGS=4.5V 4 1 3.0 3.5 2 0.5 4.5 10 0 0 25 50 75 I D (A) 100 Fig 12. Drain-source on-state resistance as a function of drain current; typical values 0 -60 0 60 120 180 Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature 003a a f 656 10 VDS Tj (°C) VGS (V) ID 8 VGS(pl) 6 24V VGS(th) 15V VGS 4 QGS1 VDS = 6V QGS2 QGS QGD QG(tot) 2 003aaa508 0 0 Fig 14. Gate charge waveform definitions PSMN1R5-30YLC Product data sheet 20 40 60 QG (nC) 80 Fig 15. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 9 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 003a a f 654 104 003a a f 657 100 IS (A) C (pF) Cis s 80 60 3 10 Cos s 40 Crs s 20 Tj = 150 °C 102 10-1 1 10 VDS (V) Tj = 25 °C 0 102 0 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 0.3 0.6 0.9 VS D (V) 1.2 Fig 17. Source current as a function of source-drain voltage; typical values 003a a f 444 ID (A) trr ta tb 0 0.25 IRM I RM t (s ) Fig 18. Reverse recovery timing definition PSMN1R5-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 8. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) C A1 θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) A UNIT A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-03-16 11-03-25 MO-235 Fig 19. Package outline SOT669 (LFPAK; Power-SO8) PSMN1R5-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN1R5-30YLC v.2 20110517 Product data sheet - PSMN1R9-25YLC v.1 - - Modifications: PSMN1R9-25YLC v.1 PSMN1R5-30YLC Product data sheet • Various changes to content. 20110502 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 12 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 10. Legal information 10.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 13 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PSMN1R5-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 May 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 May 2011 Document identifier: PSMN1R5-30YLC