NextPower MOSFETs Smaller, Faster, Cooler NextPower 25 V & 30 V MOSFETs in LFPAK (Power-SO8) NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAK As a power design engineer, compromise is never far from your mind. Do I choose a low RDS(on) device and accept the higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find that the package options are no longer ideal in my application? The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise… Many competitors focus only on optimising RDS(on) and Qg. As Qg gets lower then losses due to Qoss and Qgd become more significant. NextPower uses Superjunction technology to provide the optimum balance between low RDS(on), low Qoss, low Qg(tot) and Qgd to give optimum switching performance. NextPower delivers superior SOA performance, and low Qoss reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest RDS(on) with sub 1 mΩ types at both 25 V and 30 V. LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect solder defects as is common with QFN style Power-SO8 packages. Key benefits } High efficiency in power switching applications } Industry’s lowest RDS(on) Power-SO8 - Less than 1 mΩ at 25 V and 30 V } Low Qoss for reduced output losses between DRAIN & SOURCE } Low Qgd for reduced switching losses and high frequency switching } 20 V rated GATE provides better tolerance to voltage transients than lateral MOSFET types } Superior ‘Safe Operating Area’ performance compared to other Trench MOSFET vendors } Optimised for 4.5 V gate drive voltage 2 NextPower MOSFETs - Visit us at www.nxp.com/mosfets } Optimum switching performance under light & heavy load conditions } LFPAK package for compatibility with other vendor Power-SO8 types } Eliminates costly X-ray inspection – LFPAK solder joints can be optically inspected Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing Benefits of Superjunction technology Many suppliers focus on two favourable indicators when defining MOSFET performance, but this only tells part of the story. The spider chart below shows the relative performance of NextPower versus the leading MOSFET vendors, comparing the six most important MOSFET parameters required for high-performance & high reliability switching applications. The outside edge of the graph represents the ‘best-in-class’ performance, whilst scoring towards the centre of the graph represents a weakness. } L ow RDS(on) gives low I2R losses and superior performance when used in a SYNC FET or power OR-ing application } L ow Qoss gives reduced losses between the drain & source terminals since the energy stored in the output capacitance (C oss) is wasted whenever the voltage changes across the output terminals } SOA performance provides tolerance to overload & fault conditions. The graph shows the maximum allowable current for a 1 mS pulse at VDS=10 V } Low Miller charge (QGD) gives reduced switching losses between the MOSFET’s drain & source terminals when the MOSFET turns ON or turns OFF } Low gate charge (QG) gives reduced losses in the gate drive circuit since less energy is required to turn the MOSFET ON & OFF } Superior junction temperature rating, Tj(max), is proof that LFPAK is the most rugged Power-SO8 package available. LFPAK is the best choice for demanding environments and where high reliability is required Comparison of NextPower technology with key competitor types RDS(on)max @ Vgs = 4.5 V Tj(max) Qoss FOM NXP Competitor A Competitor B SOA rating Combined QG & QGD FOM NextPower MOSFETs - Visit us at www.nxp.com/mosfets 3 Superjunction technology NextPower MOSFETs use ‘Superjunction’ silicon technology to deliver the optimum balance between low RDS, low QG(tot), low QGD, high SOA performance and low C oss at 25 V and 30 V. Superjunction technology combines the benefits of a lateral MOSFET, (low Qg(tot) and low QGD) with the benefits of a Trench-MOSFET (low RDS(on) and 20 V rugged GATE rating) resulting in a uniquely balanced specification. Source NextPower technology uses p-Type pillars to improve the breakdown voltage in the OFF state, and a heavily doped n-Type drift region to achieve exceptionally low ON resistance. n+ Gate NextPower uses an optimized balance of the different resistance elements in the MOSFET to achieve a lower on-resistance for every cell. The low cell resistance means that NextPower types typically require fewer cells than competitor devices to achieve the same RDS(on), and a lower cell count provides lower QG(tot), low QGD, low C oss and superior ‘Safe operating area’ ruggedness. p-Body Since fewer cells are required to achieve a given RDS rating, then gate charge (QG), Miller charge (QGD), output capacitance (Coss) are all reduced and optimum ruggedness (denoted by the safe operating area characteristics) is achieved. n-Type p-Type DRIFT REGION PILLARS Drain NextPower types – parametric data The 25 V and 30 V types shown below are recommended for synchronous buck regulators, the low RDS(on) types are also highly recommended for Power OR-ing applications and low voltage isolated power supply topologies. 25 V NextPower types Voltage (V) RDS(on)typ VGS = 4.5 V (mΩ) QG(typ) VGS = 4.5 V (nC) QGD(typ) VGS = 4.5 V (nC) COSS (pF) PSMN0R9-25YLC 25 0.95 51 14 1437 PSMN1R1-25YLC 25 1.2 39 11 1121 PSMN1R2-25YLC 25 1.35 31 8.3 994 PSMN1R7-25YLC 25 2 28 7.8 880 PSMN1R9-25YLC 25 2.2 27 7.4 761 PSMN2R2-25YLC 25 2.6 18 5.2 617 PSMN2R9-25YLC 25 3.45 16 4.4 501 PSMN3R2-25YLC 25 3.7 14 4 462 PSMN3R7-25YLC 25 4.25 10.1 3 370 PSMN4R0-25YLC 25 4.5 10.9 3.5 354 Type 4 NextPower MOSFETs - Visit us at www.nxp.com/mosfets 30 V NextPower types Type Voltage (V) RDS(on)typ VGS = 4.5 V (mΩ) QG(typ) VGS = 4.5 V (nC) QGD(typ) VGS = 4.5 V (nC) COSS (pF) PSMN1R0-30YLC 30 1.1 50 14.6 1210 PSMN1R2-30YLC 30 1.35 38 11.6 977 PSMN1R5-30YLC 30 1.65 30 8.6 860 PSMN2R2-30YLC 30 2.3 26 8 651 PSMN2R6-30YLC 30 3.1 18 5.5 549 PSMN3R2-30YLC 30 3.75 14.2 4.1 432 PSMN3R7-30YLC 30 4.25 14 4.2 380 PSMN4R1-30YLC 30 4.75 11 3.5 316 PSMN4R5-30YLC 30 5.1 9.6 2.85 288 Benchmarking Comparing NXP NextPower with NXP Trench 6 technology Benchmark testing for NextPower types shows a 1% efficiency gain compared to equivalent Trench 6 types: =&G$3H" ) 30 V NextPower types XYW! XYW! Type XYW! XYW! PSMN1R5-30YL PSMN1R5-30YLC IJ0C&4E$F9) =K,LMN<=) OKC$F9E) =K,LMN<=) U5V! Uf! typ RDS(on) U\! VGS = 4.5 V (mΩ) VoltageU5X (V)! 30 ] ! 30 OKPC$F9E) =K,LMN<=) f5f1.8 ! f5\! V5T! V5f! ]! QG(typ) TVVY! \VT! VGS = 4.5 V (nC) U5]! U5]V! 1.65 8+,,C$F9E ) 36 30 bgf ! U]] ! QGD(typ) VGS = 4.5 V (nC) COSS (pF) 8.7 1082 8.6 860 PSMN4R0-30YL 30 3.7 18 4.3 469 PSMN4R5-30YLC 30 5.1 9.6 2.85 288 Efficiency Test conditions } Input Voltage: 12 V } Output Voltage: 1.2 V } 1 phase } Frequency: 500 KHz } Air flow: 200 LFM NextPower: PSMN4R5-30YLC / PSMN1R5-30YLC Trench 6: PSMN4R0-30YL / PSMN1R5-30YL 0 5 10 15 20 25 30 ILOAD (Amps) NextPower MOSFETs - Visit us at www.nxp.com/mosfets 5 Comparing NextPower with a leading competitor Benchmarking tests show that NextPower types deliver 1% efficiency gains compared to the nearest competitor types: Test conditions } Input Voltage: 12 V } Output Voltage: 1.2 V } 1 phase } Frequency: 500 KHz } Air flow: 200 LFM PSMN4R0-25YLC/PSMN1R1-25YLC Efficiency Competitor 0 5 10 15 20 25 30 ILOAD (Amps) Safe Operating Area comparison 10 9 SOA Current (Amp) 8 7 NXP Competitor 1 6 Competitor 2 5 4 3 2 1 0 NXP Trench 6 and previous generation from competition NXP NextPower and latest generation from competition Condition: SOA Drain current (Amp) @ Vds=10 V, 10 ms pulse for a 5 mΩ (@ 10 V) in Power SO8 Why Choose LFPAK? } Reduced electrical resistance and inductance } Outstanding thermal performance } Rugged design, qualified to AEC-Q101 (stringent automotive standard) } Easy to handle, solder and inspect } Power-SO8 footprint compatible 6 NextPower MOSFETs - Visit us at www.nxp.com/mosfets NextPower types - Coming in Q3-2011 Further NextPower types are planned for release in Q3-2011. Preliminary data is provided in the tables below. These types are recommended for control-FET applications in synchronous-buck regulators. YLB types have an integrated snubber circuit to further reduce spiking levels for critical applications. Voltage (V) RDS(on)typ VGS = 4.5 V (mΩ) PSMN6R0-30YLB 30 6.7 6.6 PSMN6R0-30YLC 30 7.6 25 7.3 PSMN7R0-30YLC 30 8.5 PSMN7R3-25YLC 25 8.9 PSMN8R6-30YLC 30 10.3 PSMN9R0-25YLC 25 10.7 PSMN011-30YLC 30 11.7 PSMN011-25YLC 25 12.7 PSMN012-30YLC 30 13.8 Voltage (V) RDS(on)typ VGS = 4.5 V (mΩ) PSMN5R0-25YLB 25 6.1 PSMN5R0-25YLC 25 PSMN6R0-25YLC Type Type types in bold red italic underline represent products in development Part numbering for NXP MOSFETs MOSFET type N-ch or P-ch MOSFET BRAND NAME P S Power Silicon Max M N MOSFET on-resistance RDS(on) 1 R 7 - MOSFET voltage BVDS Package type Gate threshold voltage NextPower special features - 25 Y L C N = N-ch R95 = 0.95 mΩ - 25 = 25 V B = D2PAK SOT404 L = Logic-level C = Optimised for Qg(fom) P = P-ch 1R7 = 1.7 mΩ - 30 = 30 V D = DPAK SOT428 S = Standard-level B = integrated snubber X= Dual N-ch 014 = 14 mΩ - 40 = 40 V E = I2PAK SOT226 Y= Dual P-ch 125 = 125 mΩ - 60 = 60 V K = SO8 SOT96 - 80 = 80 V L = QFN3333 SOT873 - 100 = 100 V P = TO220 SOT78 - 110 = 110 V Y = LFPAK SOT669 & SOT1023 - 120 = 120 V X = TO220F (FULLPACK) SOT186A Z= N-ch + P-ch NextPower MOSFETs - Visit us at www.nxp.com/mosfets 7 www.nxp.com © 2011 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: May 2011 Document order number: 9397 750 17100 Printed in the Netherlands