ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (⍀) ID (A) 0.080 @ VGS = 10V 5.3 0.150 @ VGS = 4.5V 2.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT223 package D G S Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control S D D G Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel ZXMN6A08GTA 7 12 1,000 ZXMN6A08GTC 13 12 4,000 Pinout - top view Device marking ZXMN 6A08 Issue 1 - May 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN6A08G Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 60 V Gate-source voltage VGS ± 20 V ID 5.3 A Continuous drain current @ VGS = 10V; Tamb = 25°C(b) @ VGS = 10V; Tamb = 70°C(b) 4.2 @ VGS = 10V; Tamb = 25°C(a) 3.8 IDM 20 A IS 2.1 A Pulsed source current (body diode)(c) ISM 20 A Power dissipation at Tamb = 25°C(a) PD 2 W 16 mW/°C 3.9 W 31 mW/°C Tj, Tstg -55 to +150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 62.5 °C/W Junction to ambient(b) R⍜JA 32 °C/W Pulsed drain current(c) Continuous source current (body diode)(b) Linear derating factor PD Power dissipation at Tamb = 25°C(b) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. Issue 1 - May 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN6A08G Typical characteristics Issue 1 - May 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN6A08G Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Drain-source breakdown voltage V(BR)DSS 60 Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance(*) RDS(on) Typ. Max. Unit Conditions Static V ID= 250A, VGS=0V 0.5 A VDS= 60V, VGS=0V 100 nA VGS=±20V, VDS=0V 1 V ID= 250A, VDS=VGS 0.080 ⍀ VGS= 10V, ID= 4.8A 0.150 ⍀ VGS= 4.5V, ID = 4.2A gfs 6.6 S VDS= 15V, ID= 4.8A Input capacitance Ciss 459 pF Output capacitance Coss 44.2 pF VDS= 40V, VGS=0V f=1MHz Reverse transfer capacitance Crss 24.1 pF Turn-on delay time td(on) 2.6 ns Rise time tr 2.1 ns Turn-off delay time td(off) 12.3 ns Fall time tf 4.6 ns Gate charge Qg 4.0 nC VDS= 30V, VGS= 5V ID= 1.4A Total gate charge Qg 5.8 nC Gate-source charge Qgs 1.4 nC VDS= 30V, VGS= 10V ID= 1.4A Gate drain charge Qgd 1.9 nC Diode forward voltage(*) VSD 0.88 Reverse recovery time(‡) trr Reverse recovery charge(‡) Qrr Forward transconductance (*) (‡) Dynamic(‡) Switching (†) (‡) VDD= 30V, ID= 1.5A RG≅6.0⍀, VGS= 10V Source-drain diode 1.2 V Tj=25°C, IS= 4A, VGS=0V 19.2 ns 30.3 nC Tj=25°C, IS= 1.4A, di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 1 - May 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN6A08G Typical characteristics Issue 1 - May 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN6A08G Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 1 - May 2006 © Zetex Semiconductors plc 2006 Switching time test circuit 6 www.zetex.com ZXMN6A08G Intentionally left blank Issue 1 - May 2006 © Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN6A08G Package outline - SOT223 DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - May 2006 © Zetex Semiconductors plc 2006 8 www.zetex.com