A Product Line of Diodes Incorporated ZXMN20B28K 200V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • 100% Unclamped Inductive Switch (UIS) test in production • High avalanche energy pulse withstand capability • Low gate drive voltage (Logic level capable) 2.3A • Low input capacitance 2.3A • Low on-resistance • Fast switching speed ID RDS(on) TA = 25°C 750mΩ @ VGS = 10V 200V 780mΩ @ VGS = 5V • “Green” Component and RoHS compliant (Note 1) Description and Applications • This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications. Mechanical Data Qualified to AEC-Q101 Standards for High Reliability • Case: TO252-3L • Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0 (Note 1) Power management functions • Moisture Sensitivity: Level 1 per J-STD-020 • Motor control • Terminal Connections: See Diagram • Uninterrupted power supply • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.33 grams (approximate) • SLIC line drivers for VoIP applications • Transformer driving switch • D D TO252-3L G D G Ordering Information Product ZXMN20B28KTC Note: S S Pin Out – Top View Top View Equivalent Circuit (Note 1) Marking See below Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information ZXMN 20B28 YYWW ZXMN20B28K Document Number DS31984 Rev. 2 - 2 ZXMN = Product Type Marking Code, Line 1 20B28 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN20B28K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Repetitive Avalanche Energy Repetitive Avalanche Current Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 7) (Note 7) (Note 4) (Note 4) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 2) (Note 4) Symbol VDSS VGS EAS IAS EAR IAR ID IDM IS ISM Value 200 ±20 73 5.5 4.5 5.5 2.3 1.8 1.5 17.3 5.7 17.3 Unit V V mJ A mJ A Value 4.3 34.4 10.2 76.0 2.2 17.4 29.1 12.3 57.3 1.15 -55 to 150 Unit A A A A Thermal Characteristics Characteristic Symbol (Note 2) Power dissipation Linear derating factor (Note 3) PD (Note 6) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 2) (Note 3) (Note 6) (Note 5) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. UIS in production with L = 4.83mH, IAS = 5.5A, RG = 25Ω, VDD = 100V, starting TJ = 25°C. ZXMN20B28K Document Number DS31984 Rev. 2 - 2 2 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN20B28K Thermal Characteristics 10 RDS(on) Limited ID Drain Current (A) ID Drain Current (A) 10 1 DC 100m 1s 1m Limited 1 DC 100m 100ms 10m RDS(on) 10ms Tamb=25°C 1ms 25mm x 25mm 1oz FR4 100µs 1 10 1s 100ms 10ms 10m 1m 100 T amb=25°C 10 Safe Operating Area 35 Tamb=25°C 25mm x 25mm 1oz FR4 40 D=0.5 20 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 60 Transient Thermal Impedance Single Pulse Tamb=25°C 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) Tamb=25°C 30 50mm x 50mm 2oz FR4 25 20 D=0.5 15 10 D=0.05 5 Single Pulse 0 100µ Document Number DS31984 Rev. 2 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) 1k 4 50mm x 50mm 2oz FR4 3 25mm x 25mm 1oz FR4 2 1 0 0 Pulse Power Dissipation ZXMN20B28K D=0.1 D=0.2 Transient Thermal Impedance Max Power Dissipation (W) Max Power Dissipation (W) 100 VDS Drain-Source Voltage (V) Safe Operating Area 30 100µs 1 VDS Drain-Source Voltage (V) 50 1ms 50mm x 50mm 2oz FR4 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN20B28K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 200 ⎯ ⎯ V ID = 250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 500 nA VDS = 200V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V VGS(th) 1 V ON CHARACTERISTICS Gate Threshold Voltage 1.6 2.5 0.650 0.750 0.670 0.780 ID = 250μA, VDS = VGS VGS = 10V, ID = 2.75A RDS (ON) ⎯ Forward Transconductance (Notes 8 & 9) gfs ⎯ 6.13 ⎯ S VDS = 30V, ID = 2.75A Diode Forward Voltage (Note 8) VSD ⎯ 0.860 0.950 V IS = 5.5A, VGS = 0V Reverse recovery time (Note 9) trr ⎯ 177 ⎯ ns Reverse recovery charge (Note 9) Qrr ⎯ 1.4 ⎯ μC IS = 6.5A, VGS = 0V, di/dt = 100A/μs Input Capacitance Ciss ⎯ 358 ⎯ pF Output Capacitance Coss ⎯ 50 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 6.1 ⎯ pF Static Drain-Source On-Resistance (Note 8) Ω VGS = 5V, ID = 2.75A DYNAMIC CHARACTERISTICS (Note 9) Total Gate Charge Qg ⎯ 8.1 ⎯ nC Gate-Source Charge Qgs ⎯ 1.4 ⎯ nC Gate-Drain Charge Qgd ⎯ 3.9 ⎯ nC Turn-On Delay Time (Note 10) tD(on) ⎯ 17.8 ⎯ ns Turn-On Rise Time (Note 10) tr ⎯ 76.9 ⎯ ns Turn-Off Delay Time (Note 10) tD(off) ⎯ 44.7 ⎯ ns tf ⎯ 57.1 ⎯ ns Turn-Off Fall Time (Note 10) Notes: VDS = 25V, VGS = 0V f = 1MHz VDS = 120V, VGS = 5V ID = 6.5A VDD = 100V, VGS = 5V ID = 6.5A, RG ≅ 25Ω 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. ZXMN20B28K Document Number DS31984 Rev. 2 - 2 4 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN20B28K Typical Characteristics T = 25°C 3.5V 3V 2.5V 1 0.1 2V VGS 1 2V VGS 0.1 1.5V 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 T = 25°C 0.1 2 3 VGS Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) T = 150°C 3V 3.5V 10V VGS 0.01 0.1 1 ID Drain Current (A) On-Resistance v Drain Current ZXMN20B28K Document Number DS31984 Rev. 2 - 2 10 ISD Reverse Drain Current (A) T = 25°C 1 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 VGS = 10V ID = 2.75A RDS(on) VGS = VDS ID = 250uA VGS(th) 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature 10 2.5V 10 Output Characteristics VDS = 10V 2V 1 VDS Drain-Source Voltage (V) Output Characteristics ID Drain Current (A) 10V 2.5V 0.01 RDS(on) Drain-Source On-Resistance (Ω) T = 150°C 3V ID Drain Current (A) ID Drain Current (A) 10 10V 10 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN20B28K Typical Characteristics - continued C Capacitance (pF) f = 1MHz 600 CISS 400 200 COSS CRSS 0 0.01 0.1 1 10 100 VGS Gate-Source Voltage (V) 10 VGS = 0V 800 8 6 4 VDS = 120V 2 0 ID = 6.5A 0 2 4 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 6 8 10 12 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN20B28K Document Number DS31984 Rev. 2 - 2 Switching time test circuit 6 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN20B28K Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Millimeters Min Max Min Max Max Min A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC 0.090 BSC Max 2.29 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - θ1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - ZXMN20B28K Document Number DS31984 Rev. 2 - 2 7 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN20B28K Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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