ZXMN20B28K

A Product Line of
Diodes Incorporated
ZXMN20B28K
200V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
•
100% Unclamped Inductive Switch (UIS) test in production
•
High avalanche energy pulse withstand capability
•
Low gate drive voltage (Logic level capable)
2.3A
•
Low input capacitance
2.3A
•
Low on-resistance
•
Fast switching speed
ID
RDS(on)
TA = 25°C
750mΩ @ VGS = 10V
200V
780mΩ @ VGS = 5V
•
“Green” Component and RoHS compliant (Note 1)
Description and Applications
•
This MOSFET features low on-resistance, fast switching and a high
avalanche withstand capability, making it ideal for high efficiency
power management applications.
Mechanical Data
Qualified to AEC-Q101 Standards for High Reliability
•
Case: TO252-3L
•
Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0 (Note 1)
Power management functions
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Motor control
•
Terminal Connections: See Diagram
•
Uninterrupted power supply
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.33 grams (approximate)
•
SLIC line drivers for VoIP applications
•
Transformer driving switch
•
D
D
TO252-3L
G
D
G
Ordering Information
Product
ZXMN20B28KTC
Note:
S
S
Pin Out – Top View
Top View
Equivalent Circuit
(Note 1)
Marking
See below
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN
20B28
YYWW
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
ZXMN = Product Type Marking Code, Line 1
20B28 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
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A Product Line of
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ZXMN20B28K
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Repetitive Avalanche Energy
Repetitive Avalanche Current
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS = 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 7)
(Note 7)
(Note 4)
(Note 4)
(Note 3)
TA = 70°C (Note 3)
(Note 2)
(Note 4)
(Note 2)
(Note 4)
Symbol
VDSS
VGS
EAS
IAS
EAR
IAR
ID
IDM
IS
ISM
Value
200
±20
73
5.5
4.5
5.5
2.3
1.8
1.5
17.3
5.7
17.3
Unit
V
V
mJ
A
mJ
A
Value
4.3
34.4
10.2
76.0
2.2
17.4
29.1
12.3
57.3
1.15
-55 to 150
Unit
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
(Note 2)
Power dissipation
Linear derating factor
(Note 3)
PD
(Note 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Note 2)
(Note 3)
(Note 6)
(Note 5)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C/W
°C
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. UIS in production with L = 4.83mH, IAS = 5.5A, RG = 25Ω, VDD = 100V, starting TJ = 25°C.
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
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ZXMN20B28K
Thermal Characteristics
10
RDS(on)
Limited
ID Drain Current (A)
ID Drain Current (A)
10
1
DC
100m
1s
1m
Limited
1
DC
100m
100ms
10m
RDS(on)
10ms
Tamb=25°C
1ms
25mm x 25mm
1oz FR4
100µs
1
10
1s
100ms
10ms
10m
1m
100
T amb=25°C
10
Safe Operating Area
35
Tamb=25°C
25mm x 25mm
1oz FR4
40
D=0.5
20
D=0.1
D=0.2
D=0.05
10
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
60
Transient Thermal Impedance
Single Pulse
Tamb=25°C
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
Tamb=25°C
30
50mm x 50mm
2oz FR4
25
20
D=0.5
15
10
D=0.05
5
Single Pulse
0
100µ
Document Number DS31984 Rev. 2 - 2
1m
10m 100m
1
10
100
1k
Pulse Width (s)
1k
4
50mm x 50mm
2oz FR4
3
25mm x 25mm
1oz FR4
2
1
0
0
Pulse Power Dissipation
ZXMN20B28K
D=0.1
D=0.2
Transient Thermal Impedance
Max Power Dissipation (W)
Max Power Dissipation (W)
100
VDS Drain-Source Voltage (V)
Safe Operating Area
30
100µs
1
VDS Drain-Source Voltage (V)
50
1ms
50mm x 50mm
2oz FR4
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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ZXMN20B28K
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
200
⎯
⎯
V
ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
500
nA
VDS = 200V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
VGS(th)
1
V
ON CHARACTERISTICS
Gate Threshold Voltage
1.6
2.5
0.650
0.750
0.670
0.780
ID = 250μA, VDS = VGS
VGS = 10V, ID = 2.75A
RDS (ON)
⎯
Forward Transconductance (Notes 8 & 9)
gfs
⎯
6.13
⎯
S
VDS = 30V, ID = 2.75A
Diode Forward Voltage (Note 8)
VSD
⎯
0.860
0.950
V
IS = 5.5A, VGS = 0V
Reverse recovery time (Note 9)
trr
⎯
177
⎯
ns
Reverse recovery charge (Note 9)
Qrr
⎯
1.4
⎯
μC
IS = 6.5A, VGS = 0V,
di/dt = 100A/μs
Input Capacitance
Ciss
⎯
358
⎯
pF
Output Capacitance
Coss
⎯
50
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
6.1
⎯
pF
Static Drain-Source On-Resistance (Note 8)
Ω
VGS = 5V, ID = 2.75A
DYNAMIC CHARACTERISTICS (Note 9)
Total Gate Charge
Qg
⎯
8.1
⎯
nC
Gate-Source Charge
Qgs
⎯
1.4
⎯
nC
Gate-Drain Charge
Qgd
⎯
3.9
⎯
nC
Turn-On Delay Time (Note 10)
tD(on)
⎯
17.8
⎯
ns
Turn-On Rise Time (Note 10)
tr
⎯
76.9
⎯
ns
Turn-Off Delay Time (Note 10)
tD(off)
⎯
44.7
⎯
ns
tf
⎯
57.1
⎯
ns
Turn-Off Fall Time (Note 10)
Notes:
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 120V, VGS = 5V
ID = 6.5A
VDD = 100V, VGS = 5V
ID = 6.5A, RG ≅ 25Ω
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
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ZXMN20B28K
Typical Characteristics
T = 25°C
3.5V
3V
2.5V
1
0.1
2V
VGS
1
2V
VGS
0.1
1.5V
0.01
0.1
1
10
0.1
VDS Drain-Source Voltage (V)
1
T = 25°C
0.1
2
3
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
T = 150°C
3V
3.5V
10V
VGS
0.01
0.1
1
ID Drain Current (A)
On-Resistance v Drain Current
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
10
ISD Reverse Drain Current (A)
T = 25°C
1
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
VGS = 10V
ID = 2.75A
RDS(on)
VGS = VDS
ID = 250uA
VGS(th)
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
10
2.5V
10
Output Characteristics
VDS = 10V
2V
1
VDS Drain-Source Voltage (V)
Output Characteristics
ID Drain Current (A)
10V
2.5V
0.01
RDS(on) Drain-Source On-Resistance (Ω)
T = 150°C
3V
ID Drain Current (A)
ID Drain Current (A)
10
10V
10
10
1
T = 150°C
0.1
T = 25°C
0.01
Vgs = 0V
1E-3
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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ZXMN20B28K
Typical Characteristics - continued
C Capacitance (pF)
f = 1MHz
600
CISS
400
200
COSS
CRSS
0
0.01
0.1
1
10
100
VGS Gate-Source Voltage (V)
10
VGS = 0V
800
8
6
4
VDS = 120V
2
0
ID = 6.5A
0
2
4
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
6
8
10
12
14
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
Switching time test circuit
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ZXMN20B28K
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Min
Millimeters
Min
Max
Min
Max
Max
Min
A
0.086
0.094
2.18
2.39
e
A1
-
0.005
-
0.127
H
0.370
0.410
9.40
10.41
b
0.020
0.035
0.508
0.89
L
0.055
0.070
1.40
1.78
b2
0.030
0.045
0.762
1.14
L1
0.108 REF
2.74 REF
b3
0.205
0.215
5.21
5.46
L2
0.020 BSC
0.508 BSC
0.090 BSC
Max
2.29 BSC
c
0.018
0.024
0.457
0.61
L3
0.035
0.065
0.89
1.65
c2
0.018
0.023
0.457
0.584
L4
0.025
0.040
0.635
1.016
D
0.213
0.245
5.41
6.22
L5
0.045
0.060
1.14
1.52
D1
0.205
-
5.21
-
θ1°
0°
10°
0°
10°
E
0.250
0.265
6.35
6.73
θ°
0°
15°
0°
15°
E1
0.170
-
4.32
-
-
-
-
-
-
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
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ZXMN20B28K
Suggested Pad Layout
6.2
0.244
3.0
0.118
5.8
0.228
1.6
0.063
2.58
0.101
6.17
0.243
mm
inches
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
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