Transistor 2SA0720A (2SA720A) Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –70 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 625 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ● 13.5±0.5 ■ Features 4.0±0.2 5.1±0.2 5.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit – 0.1 µA Collector cutoff current ICBO VCB = –20V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –80 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –70 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V –150mA*2 85 hFE2 VCE = –10V, IC = –500mA*2 40 Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA*2 – 0.2 – 0.6 V Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA*2 – 0.85 –1.5 V Transition frequency fT VCB = –10V, IE = 50mA, f = 100MHz 120 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 hFE1 Forward current transfer ratio *1 VCE = –10V, IC = 240 MHz 30 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R hFE1 85 ~ 170 120 ~ 240 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SA0720A Transistor PC — Ta IC — VCE –1.2 Ta=25˚C IB=–10mA –1.0 600 –8mA –7mA – 0.8 500 –6mA –5mA – 0.6 400 300 –4mA –3mA – 0.4 200 – 0.2 – 0.8 – 0.6 –1mA – 0.2 0 40 60 80 100 120 140 160 0 0 –2 –1 Ta=75˚C 25˚C –25˚C – 0.03 –10 –30 –10 –3 25˚C Ta=–25˚C –1 75˚C – 0.1 – 0.003 – 0.03 –3 –10 –30 –100 –300 –1000 – 0.01 –1 Collector current IC (mA) –3 –10 140 120 100 80 60 40 20 0 1 3 10 200 30 Emitter current IE (mA) 100 –10 Ta=75˚C 25˚C 150 –25˚C 100 50 0 –1 –100 –300 –1000 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) ICBO — Ta 104 VCB=–20V IE=0 f=1MHz Ta=25˚C 40 103 35 ICBO (Ta) ICBO (Ta=25˚C) Collector output capacitance Cob (pF) 160 –8 250 Cob — VCB 45 –6 VCE=–10V 50 VCB=–10V Ta=25˚C 180 –30 –4 300 Collector current IC (A) fT — IE 200 –2 Base current IB (mA) IC/IB=10 – 0.3 – 0.01 – 0.001 –1 0 hFE — IC –100 Base to emitter saturation voltage VBE(sat) (V) –3 – 0.1 –8 VBE(sat) — IC IC/IB=10 – 0.3 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –10 –4 Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –1.0 – 0.4 –2mA 100 0 Transition frequency fT (MHz) –9mA VCE=–10V Ta=25˚C Collector current IC (A) 700 0 2 IC — IB –1.2 Collector current IC (A) Collector power dissipation PC (mW) 800 30 25 20 102 15 10 10 5 0 –1 1 –3 –10 –30 –100 Collector to base voltage VCB (V) 0 60 120 180 Ambient temperature Ta (˚C) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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