PANASONIC UN4222

Transistors with built-in Resistor
UN4221/4222/4223/4224
Silicon NPN epitaxial planer transistor
Unit: mm
3.0±0.2
4.0±0.2
For digital circuits
●
●
●
●
marking
(R1)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
UN4221
UN4222
UN4223
UN4224
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
■ Absolute Maximum Ratings
1
2.54±0.15
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
500
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Emitter
cutoff
current
Internal Connection
C
R1
B
R2
E
(Ta=25˚C)
Symbol
Collector cutoff current
1 : Emitter
2 : Collector
3 : Base
New S Type Package
(Ta=25˚C)
Symbol
Parameter
3
1.27 1.27
Parameter
■ Electrical Characteristics
2
2.0±0.2
■ Resistance by Part Number
0.7±0.1
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
New S type package, allowing supply with the radial taping.
+0.2
0.45–0.1
●
15.6±0.5
■ Features
max
Unit
ICBO
VCB = 50V, IE = 0
Conditions
min
typ
1
µA
ICEO
VCE = 50V, IB = 0
1
µA
UN4221
5
UN4222
IEBO
VEB = 6V, IC = 0
2
UN4223/4224
mA
1
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
hFE
VCE = 10V, IC = 100mA
50
VCE(sat)
IC = 100mA, IB = 5mA
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 500Ω
Output voltage low level
VOL
VCC = 5V, VB = 3.5V, RL = 500Ω
Forward
current
transfer
ratio
UN4221
40
UN4222
UN4223/4224
60
Collector to emitter saturation voltage
Input
resistance
0.25
4.9
UN4221/4224
V
V
0.2
V
(+30%)
kΩ
2.2
UN4222
R1
(–30%)
4.7
0.8
1.0
1.2
0.17
0.22
0.27
UN4223
10
Resistance ratio
UN4224
R1/R2
1
Transistors with built-in Resistor
UN4221/4222/4223/4224
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
400
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN4221
IC — VCE
VCE(sat) — IC
IB=1.0mA
Ta=25˚C
Collector current IC (mA)
250
0.9mA
0.8mA
200
0.7mA
0.6mA
150
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
0
0
2
4
6
8
10
Collector to emitter saturation voltage VCE(sat) (V)
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
12
1
200
25˚C
100
3
10
30
100
300
1
1000
3
IO — VIN
16
12
8
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
–25˚C
10000
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
4
3
0
0.1
0.3
1
3
10
Collector to base voltage
2
300
0
Cob — VCB
20
VCE=10V
0.01
Collector to emitter voltage VCE (V)
24
hFE — IC
400
Forward current transfer ratio hFE
300
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
Transistors with built-in Resistor
UN4221/4222/4223/4224
Characteristics charts of UN4222
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
250
IB=1.0mA
0.9mA
200
0.8mA
0.7mA
150
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
VCE=10V
0.01
0
0
2
4
6
8
10
10
3
30
100
100
–25˚C
50
300
1000
1
3
6
4
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
Output current IO (µA)
8
10
Collector current IC (mA)
IO — VIN
10000
f=1MHz
IE=0
Ta=25˚C
10
25˚C
Collector current IC (mA)
Cob — VCB
12
Ta=75˚C
150
0
1
12
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
hFE — IC
200
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
300
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
0.03
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UN4223
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
200
IB=1.0mA
0.9mA
0.8mA
160
120
0.7mA
0.6mA
0.5mA
80
0.4mA
0.3mA
40
0.2mA
0.1mA
hFE — IC
IC/IB=10
30
10
3
1
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
Ta=75˚C
VCE=10V
25˚C
150
100
–25˚C
50
0
0.01
0
200
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
1
3
10
30
100
300
Collector current IC (mA)
1000
1
3
10
30
100
300
1000
Collector current IC (mA)
3
UN4221/4222/4223/4224
Transistors with built-in Resistor
Cob — VCB
IO — VIN
10000
10
8
6
4
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
12
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
0.03
1
0.4
100
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UN4224
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
250
IB=1.0mA
200
0.9mA
0.8mA
150
0.7mA
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
100
0
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
2
4
6
8
10
12
3
–25˚C
50
30
100
300
1
1000
3
6
4
30
100
300
1000
VIN — IO
1000
VO=5V
Ta=25˚C
3000
300
1000
100
Input voltage VIN (V)
8
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
10
10
10000
f=1MHz
IE=0
Ta=25˚C
25˚C
100
Collector current IC (mA)
Cob — VCB
12
Ta=75˚C
150
0
1
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
VCE=10V
0.01
0
300
100
30
10
VO=0.2V
Ta=25˚C
30
10
3
1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
4
hFE — IC
200
Forward current transfer ratio hFE
300
30
100
VCB (V)
1
0.4
0.3
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.1
0.1
0.3
1
3
10
30
Output current IO (mA)
100